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GBJ8M

产品描述6 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
产品类别半导体    分立半导体   
文件大小789KB,共2页
制造商SHUNYE
官网地址http://www.shunyegroup.com.cn/
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GBJ8M概述

6 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE

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GBJ/KBJ8A thru GBJ/KBJ8M
Glass Passivated Single-Phase Bridge Rectifiers
Voltage Range 50 to 1000 Volts Forward Current 8.0 Amperes
Features
Rating to 1000V PRV
Ideal for printed circuit boards
Low forward voltage drop, high current capability
Reliable low cost construction ctilizing molded plastic technique
results in inexpensive product
The plastic material has Underwriters Laboratory Flammability
Classification 94V-0
Maximum Ratings and Electrical Characteristics
Rating at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Parameter
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward
(with heatsink Note 2)
rectified output current @T
C
=100
o
C (without heatsink)
Peak forward surge current, 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method)
Max. instantaneous forward voltage drop at 4.0A DC
Maximum DC reverse current
at rated DC blocking voltage per element
Rating for fusing (t<8.3ms)
Typical junction capacitance per element (Note 1)
Typical thermal resistance (Note 2)
Operating temperature range
Storage temperature range
Notes:
@T
J
=25 C
@T
J
=125
o
C
o
Symbols
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
I
2
t
C
J
R
θ
JC
T
J
T
STG
K B J8A
GBJ8A
50
35
50
K B J8B
GBJ8B
100
70
100
K B J8D
GBJ8D
200
140
200
K B J8G
GBJ8G
400
280
400
8.0
2.9
170.0
1.0
5.0
500.0
120
55
1.6
-55 to +150
-55 to +150
K B J8J
GBJ8J
600
420
600
K B J8K
GBJ8K
800
560
800
K B J8M
GBJ8M
1000
700
1000
Units
Volts
Volts
Volts
Amps
Amps
Volt
uA
A
2
se c
pF
o
C/W
o
C
C
o
1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC
2. Device mounted on 100mm x 100mm x 1.6mm Cu plate heatsink
www.shunyegroup.com.cn

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