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GBJ2501

产品描述25 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
产品类别半导体    分立半导体   
文件大小78KB,共2页
制造商SHUNYE
官网地址http://www.shunyegroup.com.cn/
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GBJ2501概述

25 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE

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GBJ25005 - GBJ2510
25A GLASS PASSIVATED BRIDGE RECTIFIER
Features
·
·
·
·
·
·
·
Glass Passivated Die Construction
High Case Dielectric Strength of 1500V
RMS
Low Reverse Leakage Current
Surge Overload Rating to 350A Peak
Ideal for Printed Circuit Board Applications
Plastic Material - UL Flammability
Classification 94V-0
UL Listed Under Recognized Component
Index, File Number E94661
GBJ
Dim
A
B
C
D
E
G
H
I
J
K
L
M
N
P
R
S
Min
29.70
19.70
17.00
3.80
7.30
9.80
2.00
0.90
2.30
4.40
3.40
3.10
2.50
0.60
10.80
Max
30.30
20.30
18.00
4.20
7.70
10.20
2.40
1.10
2.70
4.80
3.80
3.40
2.90
0.80
11.20
L
K
A
B
M
_
S
P
C
R
N
Mechanical Data
·
·
·
·
·
·
·
Case: Molded Plastic
Terminals: Plated Leads, Solderable per
MIL-STD-202, Method 208
Polarity: Molded on Body
Mounting: Through Hole for #6 Screw
Mounting Torque: 5.0 in-lbs Maximum
Weight: 6.6 grams (approx)
Marking: Type Number
J
H
I
D
3.0 X 45°
G
E
E
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
@ T
A
= 25°C unless otherwise specified
Single phase, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Forward Rectified Output Current
(Note 1)
@ T
C
= 100°C
Non-Repetitive Peak Forward Surge Current 8.3 ms
single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage (per element)
@ I
F
= 12.5A
Peak Reverse Current
at Rated DC Blocking Voltage
I
2
t Rating for Fusing (t < 8.3ms) (Note 1)
Typical Junction Capacitance (per element) (Note 2)
Typical Thermal Resistance Junction to Case (Note 3)
Operating and Storage Temperature Range
@T
C
= 25°C
@ T
C
= 125°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
V
FM
I
R
I
2
t
C
j
R
qJC
T
j,
T
STG
GBJ
25005
50
35
GBJ
2501
100
70
GBJ
2502
200
140
GBJ
2504
400
280
25
350
1.05
10
500
510
85
0.6
-65 to +150
GBJ
2506
600
420
GBJ
2508
800
560
GBJ
2510
1000
700
Unit
V
V
A
A
V
µA
A
2
s
pF
°C/W
°C
www.shunyegroup.com.cn

GBJ2501相似产品对比

GBJ2501 GBJ25005 GBJ2502 GBJ2504 GBJ2506 GBJ2508 GBJ2510
描述 25 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 25 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 25 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 25 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 4.2 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 25 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE

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