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1N5407G

产品描述3 A, 800 V, SILICON, RECTIFIER DIODE
产品类别半导体    分立半导体   
文件大小960KB,共2页
制造商SHUNYE
官网地址http://www.shunyegroup.com.cn/
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1N5407G概述

3 A, 800 V, SILICON, RECTIFIER DIODE

3 A, 800 V, 硅, 整流二极管

1N5407G规格参数

参数名称属性值
端子数量2
元件数量1
加工封装描述LEAD FREE, PLASTIC, CASE 267-05, 2 PIN
无铅Yes
欧盟RoHS规范Yes
状态ACTIVE
包装形状ROUND
包装尺寸LONG FORM
端子形式WIRE
端子涂层MATTE TIN
端子位置AXIAL
包装材料PLASTIC/EPOXY
结构SINGLE
壳体连接ISOLATED
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
应用GENERAL PURPOSE
相数1
最大重复峰值反向电压800 V
最大平均正向电流3 A
最大非重复峰值正向电流200 A

文档预览

下载PDF文档
Reverse Voltage - 50 to 1000 Volts
DO-201AD
GLASS PASSIVATED SILICON RECTIFIER
FEATURES
1N5400G THRU 1N5408G
Forward Current - 3.0 Amperes
1.0 (25.4)
MIN.
0.220 (5.6)
0.197(5.0)
DIA.
0.375(9.5)
0.285(7.2)
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Construction utilizes void-free
molded plastic technique
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds,0.375
(9.5mm) lead length,
5 lbs. (2.3kg) tension
MECHANICAL DATA
1.0 (25.4)
MIN.
0.052 (1.3)
0.048 (1.2)
DIA.
Dimensions in inches and (millimeters)
Case:
JEDEC DO-201AD molded plastic body
Terminals:
Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:0.04
ounce, 1.10 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
SYMBOLS
5400G 5401G 5402G 5403G 5404G 5405G 5406G 5407G 5408G
1N
1N
1N
1N
1N
1N
1N
1N
1N
UNITS
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375”(9.5mm) lead length at T
A
=75 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 3.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Typical junction capacitance (NOTE 1)
Typical thermal resistance (NOTE 2)
Operating junction and storage temperature range
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
C
J
R
θ
JA
T
J
,
T
STG
50
35
50
100 200 300 400 500 600 800 1000 VOLTS
70 140 210 280 350 420 560 700 VOLTS
100 200 300 400 500 600 800 1000 VOLTS
3.0
200
1.2
5.0
100
30.0
20.0
-65 to +175
Amps
Amps
Volts
µ
A
pF
C/W
C
Note:1.Measured
at 1MHz and applied reverse voltage of 4.0V D.C.
2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted
www.shunyegroup.com.cn

1N5407G相似产品对比

1N5407G 1N5400G 1N5402G 1N5403G 1N5404G 1N5405G 1N5406G 1N5408G
描述 3 A, 800 V, SILICON, RECTIFIER DIODE 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 300 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 500 V, SILICON, RECTIFIER DIODE, DO-201AD RECTIFIER DIODE 3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-27

 
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