Product Specification
www.jmnic.com
Silicon Power Transistors
2SD1594
DESCRIPTION
・With
TO-220Fa package
APPLICATIONS
・Low
frequency power amplifier
・High
speed switching industrial use
PINNING
・
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
ABSOLUTE MAXIMUM RATINGS AT Tc=25
℃
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Base current (DC)
Collector power dissipation
Collector power dissipation
Junction temperature
Storage temperature
T
a
=25℃
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
150
100
7
7
15
3.5
1.5
40
150
-55~150
V
A
A
A
W
W
℃
℃
UNIT
V
JMnic
Product Specification
www.jmnic.com
Silicon Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
h
FE-3
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Emitter-base saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
DC current gain
CONDITIONS
I
C
=5A , I
B1
=0.5A,L=1mH
I
C
=5A I
B
=0.5A
I
C
=5A I
B
=0.5A
V
CB
=100V I
E
=0
V
EB
=5V I
C
=0
I
C
=0.5A ; V
CE
=5V
I
C
=3A ; V
CE
=5V
I
C
=5A ; V
CE
=5V
40
40
20
MIN
60
TYP.
2SD1594
MAX
UNIT
V
0.6
1.5
10
10
V
V
μA
μA
240
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=5A ;I
B1
=0.5A
I
B2
=-0.5A; V
CC
=50V
R
L
=10Ω
0.5
0.5
1.5
μs
μs
μs
h
FE-2
Classifications
R
40-80
O
70-140
Y
120-240
JMnic
Product Specification
www.jmnic.com
Silicon Power Transistors
PACKAGE OUTLINE
2SD1594
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
JMnic