GBJ5006 thru GBJ5010
®
Pb Free Plating Product
GBJ5006 thru GBJ5010
Pb
50.0 AMPERE GLASS PASSIVATED FLAT BRIDGE RECTIFIERS
Features
•
Glass passivated chip junction
•
Low forward voltage drop
•
High surge overload rating of 400 A peak
•
Ideal for printed circuit board
GBJ
Dimensions in inches and (millimeters)
1.193(30.3)
1.169(29.7)
HOLE FOR NO.
6 SCREW
.189(4.8)
.173(4.4)
.119
(0.5) .800(20.3)
.697(17.7)
.441(11.2)
.106(2.7)
.096(2.3)
.094(2.4)
.078(2.0)
.043(1.1)
.035(0.9)
.402(1.1)
.386(0.9)
.150(3.8)
.134(3.4)
.184(3.4)
.122(3.1)
.031(0.8)
.023(0.6)
+ ~ ~ -
.425(10.8)
.114(2.9)
.098(2.5)
.165(4.2) .708(18.0)
.150(3.8) .669(17.0)
Mechanical Data
•
Case: Molded plastic,GBJ(5S/6KBJ)
•
Epoxy: UL 94V-0 rate flame retardant
•
Terminals: Leads solderable per JESD22-B102,
Meet JESD 201 class 2 whisker test
•
Mounting position: Any
.303(7.7)
.287(7.3)
.303(7.7)
.287(7.3)
Absolute Maximum Ratings and Characteristics
Ratings at 25
O
C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or
inductive load. For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Rating for fusing (t<8.3ms)
Maximum instantaneous forward voltage (Note 1)
@ 25 A
Maximum reverse current @ rated V
R
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
T
J
=25°C
T
J
=125°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
V
F
I
R
R
θJC
T
J
T
STG
GBJ5006
600
420
600
GBJ5008
800
560
800
50
400
664
1.1
10
500
0.56
- 55 to +150
- 55 to +150
GBJ5010
1000
700
1000
UNIT
V
V
V
A
A
A
2
s
V
μA
°C/W
°C
°C
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 1/2
http://www.thinkisemi.com/
GBJ5006 thru GBJ5010
®
RATINGS AND CHARACTERISTICS CURVES
(T
A
=25°C unless otherwise noted)
FIG.1 FORWARD CURRENT DERATING CURVE
60
50
40
30
20
10
0
0
25
50
75
100
125
150
CASE TEMPERATURE (
°
C)
RESISTIVE OR
INDUCTIVE LOAD
WITH HEATSINK
PEAK FORWARD SURGE CURRENT (A)
400
350
300
250
200
150
100
50
1
FIG. 2 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
8.3ms Single Half Sine Wave
AVERAGE FORWARD
A
CURRENT (A)
10
NUMBER OF CYCLES AT 60 Hz
100
FIG. 3 TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE CURRENT (μA)
100
INSTANTANEOUS FORWARD CURRENT (A)
100
FIG. 4 TYPICAL FORWARD CHARACTERISTICS
10
T
J
=125°C
10
1
0.1
T
J
=25°C
0
20
40
60
80
100
120
140
1
0.01
0.1
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
INSTANTANEOUS FORWARD VOLTAGE (V)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 5 TYPICAL JUNCTION CAPACITANCE
1000
JUNCTION CAPACITANCE (pF)
A
100
f=1.0MHz
Vsig=50mVp-p
10
0.1
1
10
100
REVERSE VOLTAGE (V)
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 1/2
http://www.thinkisemi.com/
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