Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SD401A
DESCRIPTION
・With
TO-220C package
・Complement
to type 2SB546A
・Collector
current I
C
=2A
・Collector-collector
voltage:V
CEO
=150V(Min)
APPLICATIONS
・For
use in general purpose power amplifier,
vertical output application
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
・
Absolute maximum ratings (Ta=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
D
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open emitter
Open base
Open collector
CONDITIONS
VALUE
200
150
5
2
3
25
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
Rθjc
CHARACTERISTICS
Thermal resistance junction to case
MAX
5.0
UNIT
℃/W
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
I
CBO
I
EBO
h
FE
f
T
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown votage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
CONDITIONS
I
C
=10mA; I
B
=0
I
C
=0.5mA; I
E
=0
I
E
=0.5mA; I
B
=0
I
C
=500m A;I
B
=50m A
V
CB
=150V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=0.4A ; V
CE
=10V
I
C
=0.4A ; V
CE
=10V;f=1MHz
40
5
MIN
150
200
5
TYP.
2SD401A
MAX
UNIT
V
V
V
1.0
50
50
200
V
μA
μA
MHz
h
FE
classifications
M
40-80
L
60-120
K
100-200
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD401A
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
JMnic
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