Product Specification
www.jmnic.com
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-3PN package
・High
DC current gain.
・Large
current capacity and wide ASO.
・Low
saturation voltage.
APPLICATIONS
・Motor
drivers, printer hammer drivers, relay
drivers,voltage regulator control.
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
2SD1197
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Tc=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current (Pulse)
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
110
100
6
10
15
70
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SD1197
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO
V
CBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
f
T
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Collector-emitter saturation voltage
Collector-base saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
CONDITIONS
I
C
=50mA ;R
BE
=
∞
I
C
=5mA ;I
E
=0
I
C
=5A; I
B
=10mA
I
C
=5A; I
B
=10mA
V
CB
=80V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=5A ; V
CE
=3V
I
C
=5A ; V
CE
=5V
1500
4000
20
MHz
MIN
100
110
1.0
1.5
2.0
0.1
3.0
TYP.
MAX
UNIT
V
V
V
V
mA
mA
JMnic