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SMBJ160

产品描述600 W, UNIDIRECTIONAL, SILICON, TVS DIODE
产品类别半导体    分立半导体   
文件大小1MB,共4页
制造商Yenyo Technology Co., Ltd.
官网地址http://www.yenyo.com.tw/
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SMBJ160概述

600 W, UNIDIRECTIONAL, SILICON, TVS DIODE

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YENYO
Surface Mount Transient Voltage Suppressor
Stand-off Voltage 5.0 to 440 V
Power Dissipation 600 Watts
SMB/DO-214AA
SMBJ SERIES
Features
RoHS compliant and halogen-free
Reliable low cost construction utilizing
molded plastic technique
Both bi-directional and uni-directional
devices are available
Typical IR less than 1uA above 10V
Fast response time: typically less than 1.0
ps form 0 Volts to V
BR
min
Mechanical Data
Case: SMB/DO-214AA, Molded plastic
has UL flammability classification 94V-0
Polarity:by cathode band denotes uni-
directional device none cathode band
denotes bi-directional device
Weight: 0.093 gram
.077(1.95)
.086(2.20)
.130(3.30)
.155(3.94)
.160(4.06)
.180(4.57)
.084(2.13)
.096(2.44)
.006(.152)
.012(.305)
.030(0.76)
.060(1.52)
Max .008(.203)
.200(5.08)
.220(5.59)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND THERMAL CHARACTERISTICS
T
A
= 25
o
C
unless otherwise noted
PARAMTER
Peak Pulse Power Dissipation at T
A
=25 C
by 10/1000us waveform fig.1 (Note 1,2)
Peak Forward Surge Current, 8.3ms single
Half sine-wave super imposed on rated load
(Note 3)
Steady State Power Dissipation at T
A
=50 C
Maximum lnstantaneous forward voltage
at 50A for unidirectional devices only (Note 4)
Typical Thermal Resistance Junction
to Ambient
Typical Thermal Resistance Junction
to Lead
Operating Junction and Storage Temperature
Range
o
o
SYMBOL
VALUE
UNIT
P
PPM
Minimum 600
Watts
I
FSM
PM
(AV)
V
F
100
5.0
3.5 / 5.0
A
Watts
V
R
JA
100
o
C/W
R
JL
20
o
C/W
T
J
, T
STG
o
-65 to +150
o
C
NOTES : (1) Non-repetitive current pulse, per fig. 3 and derated above TA=25 C per fig. 2.
(2) Mounted on 0.2”x0.2”(5.0mmx5.0mm) copper pads to each terminal
(3) 8.3ms single half-sine wave duty cycle= 4pulses maximum per minute(unidirectional units only)
(4) V
F
<3.5V for V
BR
200V and V
F
<5.0V for V
BR
201V
1/4
R3, JAN-13

 
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