Product Specification
www.jmnic.com
2SD1026
Silicon NPN Transistors
Features
﹒With
TO-247 package
﹒Darlington
transistor
B C E
Absolute Maximum Ratings Tc=25℃
SYMBOL
V
CBO
V
CEO
V
EBO
I
B
I
C
P
C
T
j
T
stg
PARAMETER
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Base current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
RATING
100
100
7
1
15
100
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
TO-247
Electrical Characteristics Tc=25℃
SYMBOL
I
CBO
I
CEO
I
EBO
V
CBO
V
CEO
V
EBO
V
CE(sat-1)
V
CE(sat-2)
h
FE-1
h
FE-2
V
BE(sat-1)
V
BE(sat-2)
f
T
PARAMETER
Collector cut-off current
Collector breakdown voltage
Emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltages
Collector-emitter saturation voltages
Forward current transfer ratio
Forward current transfer ratio
Base-emitter saturation voltages
Base-emitter saturation voltages
Transition frepuency at f=1MHz
I
C
=1.5A; V
CE
=10V
20
MHz
I
C
=10A; I
B
=20mA
2.0
V
I
C
=10A; V
CE
=3V
1500
30000
I
C
=10A; I
B
=20mA
1.5
V
I
C
=30mA; I
B
=0
100
V
CONDITIONS
V
CB
=100V; I
E
=0
V
CE
=100V; I
B
=0
V
EB
=7V; I
C
=0
MIN
TYP
MAX
0.1
0.1
5
UNIT
mA
mA
mA
JMnic
PCB设计
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