BCR3KM-12LA
Features
•
•
•
•
I
T (RMS)
: 3 A
V
DRM
: 600 V
I
FGTI
, I
RGTI
, I
RGT
Ⅲ
: 20 mA (10 mA)
Note5
Viso : 2000 V
•
Insulated Type
•
Planar Passivation Type
•
UL Recognized : Yellow Card No. E223904
File No. E80271
Outline
TO-220FN
2
1. T
1
Terminal
2. T
2
Terminal
3. Gate Terminal
3
1
1
2 3
Applications
Switching mode power supply, small motor control, heater control, solenoid driver, and other general controlling
devices
Maximum Ratings
Parameter
Repetitive peak off-state voltage
Note1
Non-repetitive peak off-state voltage
Note1
Symbol
V
DRM
V
DSM
Voltage class
12
600
720
Unit
V
V
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BCR3KM-12LA
Parameter
RMS on-state current
Surge on-state current
I
2
t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Isolation voltage
Notes: 1. Gate open.
Symbol
I
T (RMS)
I
TSM
I
2
t
P
GM
P
G (AV)
V
GM
I
GM
Tj
Tstg
—
Viso
Ratings
3
30
3.7
3
0.3
6
0.5
– 40 to +125
– 40 to +125
2.0
2000
Unit
A
A
A
2
s
W
W
V
A
°C
°C
g
V
Conditions
Commercial frequency, sine full wave
360° conduction, Tc = 109°C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Ta = 25°C, AC 1 minute,
T
1
·T
2
·G terminal to case
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Note2
Symbol
I
DRM
V
TM
V
FGT
Ι
V
RGT
Ι
V
RGT
ΙΙΙ
I
FGT
Ι
I
RGT
Ι
I
RGT
ΙΙΙ
V
GD
R
th (j-c)
Min.
—
—
—
—
—
—
—
—
0.2
—
Typ.
—
—
—
—
—
—
—
—
—
—
Max.
2.0
1.5
1.5
1.5
1.5
Note5
20
Note5
20
Note5
20
—
4.0
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/W
Test conditions
Tj = 125°C, V
DRM
applied
Tc = 25°C, I
TM
= 4.5 A,
Instantaneous measurement
Tj = 25°C, V
D
= 6 V, R
L
= 6
Ω,
R
G
= 330
Ω
Tj = 25°C, V
D
= 6 V, R
L
= 6
Ω,
R
G
= 330
Ω
Tj = 125°C, V
D
= 1/2 V
DRM
Note3
Junction to case
Gate trigger current
Note2
Ι
ΙΙ
ΙΙΙ
Ι
ΙΙ
ΙΙΙ
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
(dv/dt)c
5
—
—
V/µs
Tj = 125°C
Note4
commutating voltage
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance R
th (c-f)
in case of greasing is 0.5°C/W.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
5. High sensitivity (I
GT
≤
10 mA) is also available. (I
GT
item: 1)
Test conditions
1. Junction temperature
Tj = 125°C
2. Rate of decay of on-state commutating current
(di/dt)c = –1.5 A/ms
3. Peak off-state voltage
V
D
= 400 V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
(di/dt)c
Time
Time
V
D
Main Current
Main Voltage
(dv/dt)c
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BCR3KM-12LA
Performance Curves
Maximum On-State Characteristics
10
7
Tj = 25°C
5
3
2
10
7
5
3
2
10
7
5
3
2
10
–1
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
0
1
2
Rated Surge On-State Current
40
Surge On-State Current (A)
35
30
25
20
15
10
5
0
0
10
2 3
5 7 10
1
On-State Current (A)
2 3
5 7 10
2
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Trigger Current (Tj = t°C)
×
100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Characteristics (I, II and III)
10
7
5
3
2
10
1
7
5
3
2
10
7
5
3
2
10
–1
0
2
Gate Trigger Current vs.
Junction Temperature
10
3
7
5
3
2
10
2
7
5
3
2
10
1
–60 –40–20 0 20 40 60 80 100 120 140
I
RGT III
Typical Example
Gate Voltage (V)
P
GM
= 3W
P
G(AV)
= 0.3W
V
GT
I
GM
=
0.5A
I
FGT I
, I
RGT I
I
RGT I
I
FGT I
, I
RGT III
0
V
GD
= 0.2V
2
10
2 3 5 710
1
2 3 5 710
2 3 5 710
3
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage (Tj = t°C)
×
100 (%)
Gate Trigger Voltage (Tj = 25°C)
Gate Trigger Voltage vs.
Junction Temperature
10
7
5
3
2
10
2
7
5
3
2
10
–60 –40–20 0 20 40 60 80 100 120 140
1
3
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
Transient Thermal Impedance (°C/W)
10
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
–1
0
1
2
10 2 3 5 710 2 3 5 710 2 3 5 710
2
2 3 5 710
3
2 3 5 7
Typical Example
Junction Temperature (°C)
Conduction Time (Cycles at 60Hz)
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BCR3KM-12LA
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
Maximum On-State Power Dissipation
Transient Thermal Impedance (°C/W)
10
7
5
3
2
2
10
7
5
3
2
1
10
7
5
3
2
0
10
7
5
3
2
–1
10
1
3
On-State Power Dissipation (W)
No Fins
5.0
4.5
4.0
3.5
Resistive,
3.0
inductive loads
2.5
2.0
1.5
1.0
0.5
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
360° Conduction
10 2 3 5 710
2
2 3 5 710
3
2 3 5 710
4
2 3 5 710
5
Conduction Time (Cycles at 60Hz)
RMS On-State Current (A)
Allowable Case Temperature vs.
RMS On-State Current
160
160
Allowable Ambient Temperature vs.
RMS On-State Current
120
×
120
×
t2.3
100
×
100
×
t2.3
60
×
60
×
t2.3
Ambient Temperature (°C)
Case Temperature (°C)
140
120
100
Curves apply regardless
of conduction angle
140
120
100
80
80
60
40
360° Conduction
60
All fins are black painted
aluminum and greased
40
Curves apply regardless
of conduction angle
20
Resistive,
inductive loads
20
Resistive, inductive loads
0
0
Natural convection
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
RMS On-State Current (A)
RMS On-State Current (A)
Repetitive Peak Off-State Current (Tj = t°C)
×
100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
Allowable Ambient Temperature vs.
RMS On-State Current
160
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
Repetitive Peak Off-State Current vs.
Junction Temperature
10
5
7
5
3
2
10
4
7
5
3
2
10
7
5
3
2
10
2
–60 –40–20 0 20 40 60 80 100 120 140
3
Typical Example
Ambient Temperature (°C)
140
120
100
80
60
40
20
0
0
0.5
1.0
1.5
2.0
2.5
3.0
RMS On-State Current (A)
Junction Temperature (°C)
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BCR3KM-12LA
Holding Current vs.
Junction Temperature
Holding Current (Tj = t°C)
×
100 (%)
Holding Current (Tj = 25°C)
10
3
7
5
3
2
10
2
7
5
3
2
10
–60 –40–20 0 20 40 60 80 100 120 140
1
Latching Current vs.
Junction Temperature
10
3
7
5
3
2
10
2
7
5
3
2
Typical Example
Latching Current (mA)
Distribution
T
2
+, G–
Typical Example
10
1
7
5
3
+ +
2
T
2
–, G– Typical Example
T
2
, G
10
0
–60 –40–20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
Junction Temperature (°C)
160
Typical Example
Breakover Voltage (dv/dt = xV/µs)
×
100 (%)
Breakover Voltage (dv/dt = 1V/µs)
Breakover Voltage vs.
Junction Temperature
Breakover Voltage (Tj = t°C)
×
100 (%)
Breakover Voltage (Tj = 25°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
160
140
120
100
80
60
40
20
I Quadrant
III Quadrant
Typical Example
Tj = 125°C
140
120
100
80
60
40
20
0
–60 –40–20 0 20 40 60 80 100 120 140
0
1
2
3
4
10 2 3 5 710 2 3 5 710 2 3 5 710
Junction Temperature (°C)
Rate of Rise of Off-State Voltage (V/µs)
Commutation Characteristics
Gate Trigger Current (tw)
×
100 (%)
Gate Trigger Current (DC)
Critical Rate of Rise of Off-State
Commutating Voltage (V/µs)
7
5
3
2
10
7
5
3
2
0
1
Time
Main Voltage
(dv/dt)c
V
D
Main Current
(di/dt)c
I
T
τ
Time
Gate Trigger Current vs.
Gate Current Pulse Width
10
7
5
3
2
10
2
7
5
3
2
10
1 0
10
2 3
5 7 10
1
2 3
5 7 10
2
3
Typical Example
Tj = 125°C
I
T
= 4A
τ
= 500µs
V
D
= 200V
f = 3Hz
Typical Example
I
RGT III
I
RGT I
I
FGT I
Minimum
Characteristics
Value
III Quadrant
10
7
0
10
I Quadrant
2 3
5 7 10
1
2 3
5 7 10
2
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Current Pulse Width (µs)
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