BCR3AS-12
Features
•
I
T(RMS)
: 3 A
•
V
DRM
: 600 V
•
I
FGT I
, I
RGT I
, I
RGT III
: 15 mA
•
Non-Insulated Type
•
Planar Passivation Type
Outline
MP-3A
4
2, 4
12
3
3
1
1.
2.
3.
4.
T
1
Terminal
T
2
Terminal
Gate Terminal
T
2
Terminal
Applications
Hybrid IC, solid state relay, switching mode power supply, light dimmer, electric fan, electric blanket, control of
household equipment such as washing machine, and other general purpose control applications
Maximum Ratings
Parameter
Repetitive peak off-state voltage
Note1
Non-repetitive peak off-state voltage
Note1
Symbol
V
DRM
V
DSM
Voltage class
12
600
720
Unit
V
V
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BCR3AS-12
Parameter
RMS on-state current
Surge on-state current
I
2
t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Notes: 1. Gate open.
Symbol
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
V
GM
I
GM
Tj
Tstg
—
Ratings
3
30
3.7
3
0.3
6
0.3
– 40 to +125
– 40 to +125
0.26
Unit
A
A
A
2
s
W
W
V
A
°C
°C
g
Conditions
Commercial frequency, sine full wave
360° conduction, Tc = 108°C
Note3
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Note2
I
II
III
I
II
III
Symbol
I
DRM
V
TM
V
FGT
I
V
RGT
I
V
RGT
III
I
FGT
I
I
RGT
I
I
RGT
III
V
GD
R
th(j-c)
(dv/dt)c
Min.
—
—
—
—
—
—
—
—
0.2
—
5
Typ.
—
—
—
—
—
—
—
—
—
—
—
Max.
2.0
1.7
1.5
1.5
1.5
15
15
15
—
3.8
—
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/W
V/µs
Test conditions
Tj = 125°C, V
DRM
applied
Tc = 25°C, I
TM
= 4.5 A,
Instantaneous measurement
Tj = 25°C, V
D
= 6 V, R
L
= 6
Ω,
R
G
= 330
Ω
Tj = 25°C, V
D
= 6 V, R
L
= 6
Ω,
R
G
= 330
Ω
Gate trigger current
Note2
Gate non-trigger voltage
Tj = 125°C, V
D
= 1/2 V
DRM
Thermal resistance
Junction to case
Note3
Critical-rate of rise of off-state
Tj = 125°C
Note4
commutating voltage
Notes: 2. Measurement using the gate trigger characteristics measureme circuit.
3. Case temperature is measured on the T
2
tab.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
(di/dt)c
Time
Time
V
D
Test conditions
1. Junction temperature
Tj = 125°C
2. Rate of decay of on-state commutating current
(di/dt)c = –1.5 A/ms
3. Peak off-state voltage
V
D
= 400 V
Main Current
Main Voltage
(dv/dt)c
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BCR3AS-12
Performance Curves
Maximum On-State Characteristics
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
0
1
2
3
4
5
40
Rated Surge On-State Current
Tj = 25°C
Surge On-State Current (A)
35
30
25
20
15
10
5
0
10
0
2 3 4 5 7 10
1
2 3 4 5 7 10
2
On-State Current (A)
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Trigger Current (Tj = t°C)
×
100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Characteristics (I, II and III)
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
Gate Trigger Current vs.
Junction Temperature
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1
Typical Example
I
RGT III
Gate Voltage (V)
P
GM
= 3W
P
G(AV)
= 0.3W
I
GM
=
0.5A
I
FGT I
, I
RGT I
I
RGT I
, I
RGT III
I
FGT I
V
GD
= 0.2V
10
–1
0
2 3 5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
10
–
60
–
40
–
20
0 20 40 60 80 100 120 140
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage (Tj = t°C)
×
100 (%)
Gate Trigger Voltage (Tj = 25°C)
Gate Trigger Voltage vs.
Junction Temperature
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1
–
60
–
40
–
20
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
Transient Thermal Impedance (°C/W)
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
10
–1
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
Typical Example
0 20 40 60 80 100 120 140
Junction Temperature (°C)
Conduction Time (Cycles at 60Hz)
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BCR3AS-12
Allowable Case Temperature vs.
RMS On-State Current
Curves apply regardless
140
of conduction angle
160
Maximum On-State Power Dissipation
10
On-State Power Dissipation (W)
8
360° Conduction
Resistive,
6
inductive loads
Case Temperature (°C)
3
4
5
120
100
80
60
40
4
2
0
0
1
2
360° Conduction
20
Resistive,
inductive loads
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
RMS On-State Current (A)
RMS On-State Current (A)
Repetitive Peak Off-State Current (Tj = t°C)
×
100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
Allowable Ambient Temperature vs.
RMS On-State Current
160
Repetitive Peak Off-State Current vs.
Junction Temperature
10
5
7
Typical Example
5
3
2
10
4
7
5
3
2
10
3
7
5
3
2
10
2
–
60
–
40
–
20
Ambient Temperature (°C)
140
120
100
80
60
40
20
0
0
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
0 20 40 60 80 100 120 140
RMS On-State Current (A)
Junction Temperature (°C)
Holding Current vs.
Junction Temperature
Holding Current (Tj = t°C)
×
100 (%)
Holding Current (Tj = 25°C)
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1
–
60
–
40
–
20
Latching Current vs.
Junction Temperature
10
3
7
5
3
2
10
2
7
5
3
2
Typical Example
Latching Current (mA)
Distribution
T
2
+, G–
Typical Example
0 20 40 60 80 100 120 140
10
1
7
5
3
T +, G+
2
2
– – Typical Example
T
2
, G
0
10
–
60
–
40
–
20
0 20 40 60 80 100 120 140
Junction Temperature (°C)
Junction Temperature (°C)
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BCR3AS-12
Breakover Voltage vs.
Junction Temperature
Breakover Voltage (Tj = t°C)
×
100 (%)
Breakover Voltage (Tj = 25°C)
160
Breakover Voltage (dv/dt = xV/µs)
×
100 (%)
Breakover Voltage (dv/dt = 1V/µs)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
160
140
120
100
Typical Example
140
120
100
80
60
40
20
0
–
60
–
40
–
20
Typical Example
Tj = 125°C
III Quadrant
80
60
40
20
0
10
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
I Quadrant
0 20 40 60 80 100120 140
Junction Temperature (°C)
Rate of Rise of Off-State Voltage (V/µs)
Commutation Characteristics
Critical Rate of Rise of Off-State
Commutating Voltage (V/µs)
7
5
4
3
2
Gate Trigger Current vs.
Gate Current Pulse Width
Gate Trigger Current (tw)
×
100 (%)
Gate Trigger Current (DC)
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1 0
10
2 3 4 5 7 10
1
2 3 4 5 7 10
2
Time
Main Voltage
(dv/dt)c
V
D
Main Current
(di/dt)c
I
T
τ
Time
10
1
7
5
4
Minimum
3
Characteristics
Value
2
10
0
7
0
10
I Quadrant
Typical Example
Tj = 125°C
I
T
= 4A
τ
= 500µs
V
D
= 200V
f = 3Hz
Typical Example
I
RGT III
I
RGT I
I
FGT I
III Quadrant
2 3 4 5 7 10
1
2 3 4 5 7 10
2
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Current Pulse Width (µs)
Gate Trigger Characteristics Test Circuits
6Ω
6Ω
6V
V
A
330Ω
6V
V
A
330Ω
Test Procedure I
6Ω
Test Procedure II
6V
V
A
330Ω
Test Procedure III
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