RQ3E100BN
Nch 30V 10A Middle Power MOSFET
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Outline
Datasheet
V
DSS
R
DS(on)
(Max.)
I
D
P
D
30V
10.4mΩ
±10A
2W
HSMT8
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Inner circuit
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Features
1) Low on - resistance.
2) High Power Package (HSMT8).
3) Pb-free lead plating ; RoHS compliant.
4) Halogen Free.
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Packaging specifications
Packing
Reel size (mm)
Tape width (mm)
Basic ordering unit (pcs)
Taping code
Marking
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Absolute maximum ratings
(T
a
= 25°C)
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Application
Type
Switching
Embossed
Tape
330
12
3000
TB
E100BN
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Power dissipation
Junction temperature
Range of storage temperature
Symbol
V
DSS
I
D
I
D,pulse*1
V
GSS
P
D*2
T
j
T
stg
Value
30
±10
±40
±20
2
150
-55 to +150
Unit
V
A
A
V
W
℃
℃
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© 2014 ROHM Co., Ltd. All rights reserved.
1/11
20141001 - Rev.001
RQ3E100BN
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Thermal resistance
Datasheet
Parameter
Thermal resistance, junction - ambient
Symbol
R
thJA*2
Values
Min.
-
Typ.
62.5
Max.
-
Unit
℃
/W
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Electrical characteristics (T
a
= 25°C)
Parameter
Drain - Source breakdown
voltage
Breakdown voltage
temperature coefficient
Zero gate voltage
drain current
Gate - Source leakage current
Gate threshold voltage
Gate threshold voltage
temperature coefficient
Static drain - source
on - state resistance
Gate input resistance
Transconductance
*1 Pw
≦
10μs , Duty cycle
≦
1%
Symbol
Conditions
Values
Min.
30
-
-
-
1.0
-
-
-
-
12
Typ.
-
21
-
-
-
-3
7.7
11.0
2.5
-
Max.
-
-
1
±100
2.5
-
10.4
15.3
-
-
Unit
V
(BR)DSS
V
GS
= 0V, I
D
= 1mA
Δ
V
(BR)DSS
I
D
= 1mA
ΔT
j
referenced to 25
℃
V
mV/
℃
μA
nA
V
mV/
℃
mΩ
Ω
S
I
DSS
I
GSS
V
GS(th)
V
DS
= 30V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= 10V, I
D
= 1mA
Δ
V
GS(th)
I
D
= 1mA
ΔT
j
referenced to 25
℃
R
DS(on)*3
R
G
g
fs*3
V
GS
= 10V, I
D
= 10A
V
GS
= 4.5V, I
D
= 10A
V
DS
= 5V, I
D
= 10A
*2 Mounted on a ceramic boad (30×30×0.8mm)
*3 Pulsed
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© 2014 ROHM Co., Ltd. All rights reserved.
2/11
20141001 - Rev.001
RQ3E100BN
Datasheet
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Electrical characteristics
(T
a
= 25°C)
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Symbol
C
iss
C
oss
C
rss
t
d(on)*3
t
r*3
t
d(off)*3
t
f*3
Conditions
V
GS
= 0V
V
DS
= 15V
f = 1MHz
V
DD
⋍
15V,V
GS
= 10V
Values
Min.
-
-
-
-
-
-
-
Typ.
1100
130
105
10
28
44
10
Max.
-
-
-
-
-
-
-
Unit
pF
I
D
= 5A
R
L
= 1.67Ω
R
G
= 10Ω
ns
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Gate charge characteristics
(T
a
= 25°C)
Parameter
Total gate charge
Gate - Source charge
Gate - Drain charge
Symbol
Q
g*3
Q
gs*3
Q
gd*3
Conditions
V
GS
= 10V
Values
Min.
-
-
-
-
Typ.
22.0
10.5
3.0
4.2
Max.
-
-
-
-
Unit
V
DD
⋍
15V
I
D
= 10A
V
GS
= 4.5V
nC
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Body diode electrical characteristics
(Source-Drain) (T
a
= 25°C)
Parameter
Symbol
I
S
Conditions
Values
Min.
-
Typ.
-
-
-
Max.
1.67
Unit
Body diode continuous
forward current
Body diode
pulse current
Forward voltage
T
a
= 25
℃
I
SP*1
V
SD*3
V
GS
= 0V, I
S
= 1.67A
-
-
40
1.2
A
V
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© 2014 ROHM Co., Ltd. All rights reserved.
3/11
20141001 - Rev.001
RQ3E100BN
Datasheet
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Electrical characteristic curves
Fig.1 Power Dissipation Derating Curve
Fig.2 Maximum Safe Operating Area
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
Fig.4 Single Pulse Maximum Power
dissipation
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© 2014 ROHM Co., Ltd. All rights reserved.
4/11
20141001 - Rev.001
RQ3E100BN
Datasheet
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Electrical characteristic curves
Fig.5 Typical Output Characteristics(I)
Fig.6 Typical Output Characteristics(II)
Fig.7 Breakdown Voltage vs. Junction
Temperature
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© 2014 ROHM Co., Ltd. All rights reserved.
5/11
20141001 - Rev.001
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