10-F112M3A025SH-M746F09
10-FY12M3A025SH-M746F08
datasheet
flow3xMNPC 1
Features
●
3 phase mixed voltage component topology
●
neutral point clamped inverter
●
reactive power capability
●
low inductance layout
12 mm
17 mm
1200V/25A
flow1 housing
Target Applications
●
solar inverter
●
UPS
Schematic
Types
●
10-FY12M3A025SH-M746F08
●
10-F112M3A025SH-M746F09
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Half Bridge IGBT (T1,T4,T5,T8,T9,T12)
Collector-emitter break down voltage
DC collector current
Pulsed collector current
Turn off safe operating area
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
P
tot
V
GE
t
SC
V
CC
T
j
max
T
j
≤150°C
V
GE
=15V
V
CES
I
C
I
Cpulse
T
j
=T
j
max
t
p
limited by T
j
max
T
j
≤150°C
V
CE
<=V
CES
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
h
=80°C
T
c
=80°C
1200
23
30
75
75
58
88
±20
10
800
175
V
A
A
A
W
V
µs
V
°C
Neutral P. FWD (D2,D3,D6,D7,D10,D11)
Peak Repetitive Reverse Voltage
DC forward current
Surge forward current
Power dissipation per Diode
Maximum Junction Temperature
V
RRM
I
F
I
FRM
P
tot
T
j
max
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
c
=100°C
T
h
=80°C
T
c
=80°C
600
17
23
150
28
43
150
V
A
A
W
°C
copyright Vincotech
1
2014.12.18. / Revision: 3
10-F112M3A025SH-M746F09
10-FY12M3A025SH-M746F08
datasheet
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Neutral P. IGBT (T2,T3,T6,T7,T10,T11)
Collector-emitter break down voltage
DC collector current
Pulsed collector current
Turn off safe operating area
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
P
tot
V
GE
t
SC
V
CC
T
j
max
T
j
≤150°C
V
GE
=15V
V
CES
I
C
I
Cpuls
T
j
=T
j
max
t
p
limited by T
j
max
T
j
≤150°C
V
CE
<=V
CES
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
h
=80°C
T
c
=80°C
600
18
24
60
60
31
47
±20
6
360
175
V
A
A
A
W
V
µs
V
°C
Half Bridge FWD (D1,D4,D5,D8,D9,D12)
Peak Repetitive Reverse Voltage
DC forward current
Surge forward current
Power dissipation per Diode
Maximum Junction Temperature
V
RRM
I
F
I
FRM
P
tot
T
j
max
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
h
=80°C
T
c
=80°C
1200
10
13
36
26
39
175
V
A
A
W
°C
Thermal Properties
Storage temperature
Operation temperature under switching condition
T
stg
T
op
-40…+125
-40…+(Tjmax - 25)
°C
°C
Insulation Properties
Insulation voltage
Creepage distance
Clearance
V
is
t=2s
DC voltage
4000
min 12,7
min 12,7
V
mm
mm
copyright Vincotech
2
2014.12.18. / Revision: 3
10-F112M3A025SH-M746F09
10-FY12M3A025SH-M746F08
datasheet
Characteristic Values
Parameter
Symbol
V
GE
[V] or
V
GS
[V]
Conditions
V
r
[V] or
V
CE
[V] or
V
DS
[V]
I
C
[A] or
I
F
[A] or
I
D
[A]
T
j
Min
Value
Typ
Max
Unit
Half Bridge IGBT (T1,T4,T5,T8,T9,T12)
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
V
GE(th)
V
CE(sat)
I
CES
I
GES
R
gint
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oss
C
rss
Q
Gate
Thermal grease
thickness≤50um
λ
= 1 W/mK
±15
960
25
Tj=25°C
f=1MHz
0
25
Tj=25°C
Rgoff=16
Ω
Rgon=16
Ω
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
VCE=VGE
15
0
20
1200
0
0,00085
25
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
5,2
1,7
5,8
2,11
2,42
6,4
2,4
0,0024
120
none
73
74
15
18
166
220
21
116
0,17
0,30
0,37
0,63
1430
99
85
155
nC
pF
V
V
mA
nA
Ω
ns
±15
350
15
mWs
Thermal resistance chip to heatsink per chip
R
thJH
1,64
K/W
Neutral P. FWD (D2,D3,D6,D7,D10,D11)
Diode forward voltage
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
V
F
I
r
I
RRM
t
rr
Q
rr
di(rec)max
/dt
Erec
Thermal grease
thickness≤50um
λ
= 1 W/mK
Rgon=16
Ω
±15
350
15
600
15
Tj=25°C
Tj=125°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
2,47
1,73
2,6
10
16
22
23
33
0,19
0,44
1860
1998
0,03
0,05
2,48
V
µA
A
ns
µC
A/µs
mWs
Thermal resistance chip to heatsink per chip
R
thJH
K/W
copyright Vincotech
3
2014.12.18. / Revision: 3
10-F112M3A025SH-M746F09
10-FY12M3A025SH-M746F08
datasheet
Characteristic Values
Parameter
Symbol
V
GE
[V] or
V
GS
[V]
Conditions
V
r
[V] or
V
CE
[V] or
V
DS
[V]
I
C
[A] or
I
F
[A] or
I
D
[A]
T
j
Min
Value
Typ
Max
Unit
Neutral P. IGBT (T2,T3,T6,T7,T10,T11)
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off incl diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
V
GE(th)
V
CE(sat)
I
CES
I
GES
R
gint
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oss
C
rss
Q
Gate
Thermal grease
thickness≤50um
λ
= 1 W/mK
15
480
20
Tj=25°C
f=1MHz
0
25
Tj=25°C
Rgoff=16
Ω
Rgon=16
Ω
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
V
CE
=V
GE
15
0
20
600
0
0,0012
20
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
5
1,1
5,8
1,53
1,70
6,5
1,9
0,0011
300
none
72
74
14
16
131
157
34
69
0,31
0,39
0,38
0,53
1100
71
32
120
nC
pF
V
V
mA
nA
Ω
ns
±15
350
15
mWs
Thermal resistance chip to heatsink per chip
R
thJH
3,09
K/W
Half Bridge FWD (D1,D4,D5,D8,D9,D12)
Diode forward voltage
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovery energy
V
F
I
r
I
RRM
t
rr
Q
rr
di(rec)max
/dt
E
rec
Thermal grease
thickness≤50um
λ
= 1 W/mK
Rgon=16
Ω
±15
350
15
1200
8
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
2,18
2,30
2,65
60
21
24
29,9
34,7
0,7
1,5
1972
2214
0,14
0,38
3,65
V
µA
A
ns
µC
A/µs
mWs
Thermal resistance chip to heatsink per chip
R
thJH
K/W
Thermistor
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
B-value
Vincotech NTC Reference
B(25/50)
B(25/100)
R
∆R/R
P
R100=1486
Ω
T=25°C
T=100°C
T=25°C
T=25°C
T=25°C
T=25°C
-4,5
210
3,5
3884
3964
F
21511
+4,5
Ω
%
mW
mW/K
K
K
copyright Vincotech
4
2014.12.18. / Revision: 3
10-F112M3A025SH-M746F09
10-FY12M3A025SH-M746F08
datasheet
Half Bridge
Half Bridge IGBT & Neutral Point FWD
Figure 1
Typical output characteristics
I
C
= f(V
CE
)
80
I
C
(A)
IGBT
Figure 2
Typical output characteristics
I
C
= f(V
CE
)
80
I
C
(A)
IGBT
60
60
40
40
20
20
0
0
1
2
3
4
V
CE
(V)
5
0
0
1
2
3
4
V
CE
(V)
5
At
t
p
=
T
j
=
V
GE
from
250
µs
25
°C
7 V to 17 V in steps of 1 V
At
t
p
=
T
j
=
V
GE
from
250
µs
125
°C
7 V to 17 V in steps of 1 V
Figure 3
Typical transfer characteristics
I
C
= f(V
GE
)
25
I
C
(A)
IGBT
Figure 4
Typical diode forward current as
a function of forward voltage
I
F
= f(V
F
)
60
I
F
(A)
FWD
50
20
40
15
30
10
T
j
= T
jmax
-25°C
T
j
= T
jmax
-25°C
20
5
10
T
j
= 25°C
0
0
2
4
6
8
10
V
GE
(V)
12
0
0
1
2
T
j
= 25°C
3
4
5
V
F
(V)
At
t
p
=
V
CE
=
250
10
µs
V
At
t
p
=
250
µs
copyright Vincotech
5
2014.12.18. / Revision: 3
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