SEMD4
NPN/PNP Silicon Digital Transistor Array
Preliminary data
•
Switching circuit, inverter, interface circuit,
driver circuit
•
Two (galvanic) internal isolated NPN/PNP
Transistors in one package
•
Built in bias resistor (R1=10kΩ)
Tape loading orientation
Top View
3 2 1
4
5
3
6
1
2
Marking on SOT666 package
(for example W R)
corresponds to pin 1 of device
Position in tape: pin 1
same of feed hole
side
C1
6
B2
5
E2
4
R
2
R
1
TR1
R
2
1
2
B1
3
C2
EHA07176
TR2
R
1
4 5 6
Direction of Unreeling
Type
SEMD4
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on Voltage
DC collector current
Total power dissipation,
T
S
= 75 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction - soldering point
1)
1For calculation of
R
thJA
please refer to Application Note Thermal Resistance
WR
E1
Marking
W7
Pin Configuration
Package
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666
Symbol
V
CEO
V
CBO
V
EBO
V
i(on)
I
C
P
tot
T
j
T
stg
Value
50
50
5
20
100
250
150
-65 ... 150
Unit
V
mA
mW
°C
R
thJS
≤
300
K/W
1
Feb-26-2004
SEMD4
Electrical Characteristics
at
T
A
=25°C, unless otherwise specified
Parameter
Symbol
Values
min.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 100 µA,
I
B
= 0
Collector-base breakdown voltage
I
C
= 10 µA,
I
E
= 0
Collector cutoff current
V
CB
= 40 V,
I
E
= 0
DC current gain 1)
I
C
= 5 mA,
V
CE
= 5 V
Collector-emitter saturation voltage1)
I
C
= 10 mA,
I
B
= 0.5 mA
Input off voltage
I
C
= 100 µA,
V
CE
= 5 V
Input on Voltage
I
C
= 2 mA,
V
CE
= 0.3 V
Input resistor
Resistor ratio
AC Characteristics
Transition frequency
I
C
= 10 mA,
V
CE
= 5 V,
f
= 100 MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz
C
cb
-
3
-
f
T
-
130
-
R
1
R
1
/R
2
7
0.9
10
1
13
1.1
V
i(on)
0.5
-
1.1
V
i(off)
0.4
-
1
V
CEsat
-
-
0.3
h
FE
120
-
630
I
CBO
-
-
100
V
(BR)CBO
50
-
-
V
(BR)CEO
50
-
-
typ.
max.
Unit
V
nA
-
V
kΩ
-
MHz
pF
1) Pulse test: t < 300
µ
s; D < 2%
2
Feb-26-2004
SEMD4
NPN Type
DC Current Gain
h
FE
=
f (I
C
)
V
CE
= 5V (common emitter configuration)
10
3
Collector-Emitter Saturation Voltage
V
CEsat
=
f
(I
C
),
h
FE
= 20
10
-1
A
h
FE
10
-2
10
2
I
C
10
-3
10
1 -4
10
10
-3
10
-2
A
10
-1
10
-4
0
0.1
0.2
0.3
V
0.5
I
C
V
CEsat
Input on Voltage
V
i(on)
=
f
(I
C
)
V
CE
= 0.3V (common emitter configuration)
10
-1
Input off voltage
V
i(off)
=
f
(I
C
)
V
CE
= 5V (common emitter configuration)
10
-2
A
A
10
10
-2
-3
I
C
I
C
10
-4
10
-3
10
-5
10
-4 -1
10
10
0
10
1
V
10
2
10
-6
0
0.5
1
V
2
V
i(on)
V
i(off)
3
Feb-26-2004
SEMD4
PNP Type
DC Current Gain
h
FE
=
f (I
C
)
V
CE
= 5V (common emitter configuration)
10
3
Collector-Emitter Saturation Voltage
V
CEsat
=
f
(I
C
),
h
FE
= 20
10
-1
A
h
FE
10
-2
10
2
I
C
10
-3
10
1 -4
10
10
-3
10
-2
A
10
-1
10
-4
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
V
1
I
C
V
CEsat
Input on Voltage
V
i(on)
=
f
(I
C
)
V
CE
= 0.3V (common emitter configuration)
10
-1
Input off voltage
V
i(off)
=
f
(I
C
)
V
CE
= 5V (common emitter configuration)
10
-2
A
A
10
10
-2
-3
I
C
I
C
10
-4
10
-3
10
-5
10
-4 -1
10
10
0
10
1
V
10
2
10
-6
0
0.5
1
V
2
V
i(on)
V
i(off)
4
Feb-26-2004
SEMD4
Total power dissipation
P
tot
=
f
(T
S
)
300
mW
P
tot
200
150
100
50
0
0
15
30
45
60
75
90 105 120
°C
150
T
S
Permissible Pulse Load
R
thJS
=
f
(t
p
)
Permissible Pulse Load
P
totmax
/
P
totDC
=
f
(t
p
)
10
3
K/W
10
3
10
2
P
totmax
/
P
totDC
R
thJS
10
2
10
1
10
0
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10
1
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
-1 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
10
0 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
t
p
t
p
5
Feb-26-2004
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