20-1B12IPA015SC-L579F09
20-PB12IPA015SC-L579F09Y
target datasheet
flowIPM
1B
(CI)
Features
Power
•
3 Phase Inverter
•
Open Emitter or Emitter Shunt
Gate Driver
•
Booststrap circuit
•
Overcurrent protection
•
Undervoltage lockout
NTC
•
Temperature sensor
1200 V / 15 A
flow
1B 17mm housing
Schematic
Target applications
● Industrial motor drive
● Embedded Drive (fan, pump, compressor, etc.)
Types
● 20-1B12IPA015SC-L579F09
● 20-PB12IPA015SC-L579F09Y
Maximum Ratings
T
j
=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter Switch
Collector-emitter voltage
Collector current
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
Short circuit ratings
Maximum Junction Temperature
V
CES
I
C
I
CRM
P
tot
V
GES
t
SC
V
CC
T
jmax
T
j
≤ 150°C
V
GE
= 15V
T
j
=
T
jmax
t
p
limited by
T
jmax
T
j
=
T
jmax
T
S
=80 °C
T
S
=80 °C
1200
13
45
27
±20
10
800
175
V
A
A
W
V
µs
V
°C
Copyright Vincotech
1
12. Aug. 2015 / Revision 1
20-1B12IPA015SC-L579F09
20-PB12IPA015SC-L579F09Y
target datasheet
Parameter
Symbol
Conditions
Value
Unit
Inverter Diode
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Maximum Junction Temperature
V
RRM
I
F
I
FRM
P
tot
T
jmax
T
j
=T
jmax
T
h
=80°C
T
j
=T
jmax
T
h
=80°C
1200
14
30
24
175
V
A
A
W
°C
Gate driver
Inverter Shunt
Module Properties
Copyright Vincotech
2
12. Aug. 2015 / Revision 1
20-1B12IPA015SC-L579F09
20-PB12IPA015SC-L579F09Y
target datasheet
Characteristic Values
Inverter Switch
Parameter
Symbol
Conditions
V
GE
[V]
V
CE
[V]
I
C
[A]
T
j
[ °C]
Value
Unit
Min
Typ
Max
Static
Gate-emitter threshold voltage
V
GE(th)
V
GE
=V
CE
0,0005
25
125
25
Collec tor-emitter saturation voltage
V
CEsat
15
15
125
150
Collec tor-emitter c ut-off current
Gate-emitter leakage c urrent
Internal gate resistance
Input capacitance
Reverse transfer capac itance
I
CES
I
GES
r
g
C
ies
f=1 MHz
C
res
0
25
25
30
0
20
1200
0
25
125
25
125
none
890
pF
120
2,28
2
µA
nA
1,58
1,89
2,07
V
5,3
5,8
6,3
V
Thermal
Thermal resistance junc tion to sink
R
th(j-s)
phase-change
material
ʎ
=3,4W/mK
3,50
K/W
Inverter Diode
Parameter
Symbol
Conditions
V
r
[V]
I
F
[A]
T
j
[°C]
Min
Value
Typ
Max
Unit
Static
25
Forward voltage
V
F
15
125
150
Reverse leakage c urrent
I
r
1200
25
150
1,77
3,5
µA
1,80
2,05
V
Thermal
Thermal resistance junc tion to sink
R
th(j-s)
phase-c hange
material
ʎ
=3,4W/mK
3,95
K/W
Copyright Vincotech
3
12. Aug. 2015 / Revision 1
20-1B12IPA015SC-L579F09
20-PB12IPA015SC-L579F09Y
target datasheet
Gate driver
Inverter Shunt
Copyright Vincotech
4
12. Aug. 2015 / Revision 1
20-1B12IPA015SC-L579F09
20-PB12IPA015SC-L579F09Y
target datasheet
Thermistor
Copyright Vincotech
5
12. Aug. 2015 / Revision 1
聊聊、笑笑、闹闹
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
