20-PB06IPB010RC-P955A40Y
20-1B06IPB010RC-P955A40
datasheet
flow
IPM 1B
Features
● CIP-topology (converter + inverter + PFC)
● Optimized for PFC frequencies of 20kHz..100kHz
and inverter frequencies of 4kHz..20kHz
● Integrated PFC controller circuit with programmable
DC output voltage and PWM frequency
● Inverter gate drive inclusive bootstrap for high side
power supply
● Over current and short circuit protection
● Integrated DC-capacitor
● Sense output of DC-current
● Temperature sensor
● Conclusive power flow, all power connections on
one side, no input output X-ing
● Optional pre-applied thermal interface material
600 V / 10 A
flow
IPM 1B
Solder pins
Press-fit
Schematic
Target Applications
●
●
●
●
Fans and Pumps
AirCon
Electrical Tools
Low power industrial drive
Types
● 20-1B06IPB010RC-P955A40
● 20-PB06IPB010RC-P955A40Y
Maximum Ratings
T
j
=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Input Rectifier Diode
Repetitive peak reverse voltage
DC forward current
Surge forward current
I2t-value
Power dissipation
Maximum Junction Temperature
V
RRM
I
FAV
I
FSM
I
2
t
P
tot
T
jmax
T
j
=Tjmax
T
h
=80°C
T
c
=80°C
1600
16
21
130
T
j
=150°C
80
T
h
=80°C
T
c
=80°C
19
29
150
A2s
W
°C
V
A
A
t
p
=10ms
50Hz half sine wave
T
j
=Tjmax
PFC IGBT
Collector-emitter break down voltage
DC collector current
Repetitive peak collector current
Turn off safe operating area
Power dissipation
Gate-emitter peak voltage
Maximum Junction Temperature
P
tot
V
GE
T
jmax
V
CE
I
C
I
CRM
T
j
=Tjmax
t
p
limited by
T
jmax
V
CE
≤ 650V,
T
j
≤
T
op
max
T
j
=Tjmax
T
h
=80°C
T
c
=80°C
T
h
=80°C
T
c
=80°C
650
19
20
90
90
37
56
±20
175
V
A
A
A
W
V
°C
copyright Vincotech
1
28 Jul. 2015 / Revision 3
20-PB06IPB010RC-P955A40Y
20-1B06IPB010RC-P955A40
datasheet
Maximum Ratings
T
j
=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
PFC Inverse Diode
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation
Maximum Junction Temperature
V
RRM
I
F
I
FRM
P
tot
T
jmax
T
j
=Tjmax
t
p
limited by
T
jmax
T
j
=Tjmax
T
h
=80°C
T
c
=80°C
T
h
=80°C
T
c
=80°C
650
6
8
12
12
19
175
V
A
A
W
°C
PFC Diode
Peak Repetitive Reverse Voltage
DC forward current
Surge forward current
I
t-value
Repetitive peak forward current
Power dissipation
Maximum Junction Temperature
2
V
RRM
I
F
I
FSM
I
t
I
FRM
P
tot
T
jmax
2
650
T
j
=Tjmax
T
h
=80°C
T
c
=80°C
13
16
180
130
60
T
h
=80°C
T
c
=80°C
25
37
175
V
A
A
A
A
W
°C
t
p
=8,3ms
60 Hz half sine wave
t
p
limited by
T
jmax
T
j
=Tjmax
Inverter Transistor
Collector-emitter break down voltage
DC collector current
Repetitive peak collector current
Turn off safe operating area
Power dissipation
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
P
tot
V
GE
t
SC
V
CC
T
jmax
T
j
≤150°C
V
GE
=15V
V
CE
I
C
I
CRM
T
j
=Tjmax
t
p
limited by
T
jmax
V
CE
≤ 600V,
T
j
≤150°C
T
j
=Tjmax
T
h
=80°C
T
c
=80°C
T
h
=80°C
T
c
=80°C
600
9
12
30
20
20
31
±20
5
400
175
V
A
A
A
W
V
µs
V
°C
Inverter Diode
Peak Repetitive Reverse Voltage
DC forward current
Power dissipation
Maximum Junction Temperature
V
RRM
I
F
P
tot
T
jmax
T
j
=Tjmax
T
j
=Tjmax
T
h
=80°C
T
c
=80°C
T
h
=80°C
T
c
=80°C
600
8
11
17
25
175
V
A
W
°C
copyright Vincotech
2
28 Jul. 2015 / Revision 3
20-PB06IPB010RC-P955A40Y
20-1B06IPB010RC-P955A40
datasheet
Maximum Ratings
T
j
=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
PFC Shunt
DC forward current
Power dissipation
I
F
P
tot
T
c
=25°C
T
c
=25°C
10
9
A
W
PFC Controller*
VCC supply voltage
VSENSE voltage
Vsense Current
FREQ pin voltage
Maximum Junction Temperature
V
CC
V
VSENSE
I
VSENSE
V
FREQ
T
jmax
VCC common with gate driver IC
26
5,3
±1
5,3
125
V
V
mA
V
°C
* for more information see infineon's datasheet ICE3PCS02
DC - Shunt
DC forward current
Power dissipation
I
F
P
tot
8
3,2
A
W
DC link Capacitor
Maximum DC voltage
V
MAX
T
c
=25°C
500
V
Gate Driver*
Supply voltage
Input voltage (LIN, HIN, EN)
Output voltage (FAULT)
U
CC
U
IN
U
OUT
20
10
VCC+0,5
V
V
V
* for more information see infineon's datasheet 6ED003L02-F2
Thermal Properties
Storage temperature
Operation temperature under switching condition
T
stg
T
op
-40…+125
-40…+(Tjmax - 25)
°C
°C
Insulation Properties
Insulation voltage
Creepage distance
Clearance
Comparative tracking index
CTI
V
is
t=2s
DC voltage
4000
min 12,7
min 12,7
>200
V
mm
mm
copyright Vincotech
3
28 Jul. 2015 / Revision 3
20-PB06IPB010RC-P955A40Y
20-1B06IPB010RC-P955A40
datasheet
Characteristic Values
Parameter
Symbol
Conditions
V
r
[V]
I
C
[A] or
V
GE
[V] or or
I
F
[A] or
V
CE
[V] or
V
GS
[V]
I
D
[A]
V
DS
[V]
Value
Unit
T
j
Min
Typ
Max
Input Rectifier Diode
Forward voltage
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
Thermal resistance chip to heatsink
V
F
V
to
r
t
I
r
R
th(j-s)
Phase-Change
Material λ = 3,4W/mK
1200
7
7
7
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1,04
0,97
0,87
0,74
25
33
0,01
V
V
m
mA
K/W
3,66
PFC IGBT
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Thermal resistance chip to heatsink
V
GE(th)
V
CEsat
I
CES
t
d(on)
t
r
t
d(off)
U
CC
=15V
t
f
E
on
E
off
C
ies
C
oss
C
rss
R
th(j-s)
Phase-Change
Material λ = 3,4W/mK
f=1MHz
0
25
Tj=25°C
400
10
V
CE
=V
GE
15
0
650
0,0003
30
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
3,3
4
2,12
2,44
27
28
5
7
122
154
2
2
0,1516
0,2417
0,0317
0,0583
2100
45
7,7
2,56
K/W
pF
4,7
2,22
0,04
V
V
mA
ns
mWs
PFC Inverse Diode
Diode forward voltage
Thermal resistance chip to heatsink
V
F
R
th(j-s)
Phase-Change
Material λ = 3,4W/mK
10
Tj=25°C
Tj=125°C
1,23
1,12
0,97
7,75
1,87
V
K/W
PFC Diode
Forward voltage
Reverse leakage current
Peak recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovered energy
Peak rate of fall of recovery current
Thermal resistance chip to heatsink
V
F
I
rm
I
RRM
t
rr
Q
rr
E
rec
(
di
rf
/dt )
max
15
400
10
U
CC
=15V
400
10
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1,92
1,97
15
19
22
36
0,2008
0,4358
0,0150
0,0504
2033
891
3,87
2,22
1,6
V
µA
A
ns
µC
mWs
A/µs
K/W
R
th(j-s)
Phase-Change
Material λ = 3,4W/mK
PFC Shunt
R1 value
R
50
m
copyright Vincotech
4
28 Jul. 2015 / Revision 3
20-PB06IPB010RC-P955A40Y
20-1B06IPB010RC-P955A40
datasheet
Characteristic Values
Parameter
Symbol
Conditions
V
r
[V]
I
C
[A] or
V
GE
[V] or or
I
F
[A] or
V
CE
[V] or
V
GS
[V]
I
D
[A]
V
DS
[V]
Value
Unit
T
j
Min
Typ
Max
Inverter Transistor
Gate emitter threshold voltage
Collector-emitter saturation voltage*
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time **
Rise time
Turn-off delay time **
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink
* chip data
** including gate driver
V
GE(th)
V
CEsat
I
CES
I
GES
R
gint
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oss
C
rss
Q
G
R
th(j-s)
Phase-Change
Material λ = 3,4W/mK
15
480
10
Tj=25°C
f=1MHz
0
25
Tj=25°C
U
CC
=15V
U
IN
=5V
400
6
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
V
CE
=V
GE
15
0
20
600
0
0,00017
10
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
4,4
1,88
5
2,20
2,32
5,6
2,62
0,002
120
none
582
631
20
25
837
950
16
22
0,1950
0,3241
0,1611
0,2042
655
37
22
64
4,72
nC
K/W
pF
V
V
mA
nA
ns
mWs
Inverter Diode
Diode forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Thermal resistance chip to heatsink
V
F
I
RRM
t
rr
Q
rr
(
di
rf
/dt )
max
10
U
CC
=15V
U
IN
=5V
400
6
E
rec
R
th(j-s)
Phase-Change
Material λ = 3,4W/mK
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1,68
2,23
2,18
6
6
179
276
0,3566
0,6738
181
46
0,0867
0,1610
5,72
2,42
V
A
ns
µC
A/µs
mWs
K/W
DC - Shunt
R2 value
R
Tol. ±1%
Tj=25°C
25
m
DC link Capacitor
C Value
C
100
nF
copyright Vincotech
5
28 Jul. 2015 / Revision 3
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