10-PZ123BA080MR-M909L28Y
flow
3xBOOST0-SiC
Features
●
SiC-Power MOSFET´s and Schottky Diodes
●
3 channel boost topology
●
Ultra Low Inductance with integrated DC-capacitors
●
Switching frequency >100kHz
●Temperature
sensor
1200V/80mΩ
flow
0 12mm housing
Target Applications
Schematic
●
solar inverter
●
Power Supply
Types
●
10-PZ123BA080MR-M909L28Y
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
T1, T3, T5
Drain to source breakdown voltage
DC drain current
Pulsed drain current
Power dissipation
Gate-source peak voltage
Maximum Junction Temperature
V
DS
I
D
I
Dpulse
P
tot
V
GS
T
j
max
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°C
T
h
=80°C
1200
19
80
50
-6/+22
150
V
A
A
W
V
°C
D1, D3, D5
Peak Repetitive Reverse Voltage
Forward average current
Non-Repetitive Peak Forward Surge Current
Repetitive Peak Forward Surge Current
Power dissipation per Diode
Maximum Junction Temperature
V
RRM
I
FAV
I
FSM
I
FRM
P
tot
T
j
max
T
j
=T
j
max
t
p
=8,3ms
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°C
T
h
=80°C
T
j
=25°C
1200
19
46
50
56
175
V
A
A
A
W
°C
copyright Vincotech
1
Revision: 1
10-PZ123BA080MR-M909L28Y
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
C1, C2, C3
Max.DC voltage
V
MAX
Tc=25°C
1000
V
Thermal Properties
Storage temperature
Operation temperature under switching condition
T
stg
T
op
-40…+125
-40…+(Tjmax - 25)
°C
°C
Insulation Properties
Insulation voltage
Creepage distance
Clearance
t=2s
DC voltage
4000
min 12,7
min 9,9
V
mm
mm
copyright Vincotech
2
Revision: 1
10-PZ123BA080MR-M909L28Y
Characteristic Values
Parameter
Symbol
V
GE
[V] or
V
GS
[V]
Conditions
V
r
[V] or
V
CE
[V] or
V
DS
[V]
I
C
[A] or
I
F
[A] or
I
D
[A]
T
j
Min
Value
Typ
Max
Unit
T1, T3, T5
Static drain to source ON resistance
Gate threshold voltage
Gate to Source Leakage Current
Zero Gate Voltage Drain Current
Internal Gate Resistance
Turn On Delay Time
Rise Time
Turn off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Total gate charge
Gate to source charge
Gate to drain charge
Input capacitance
Output capacitance
Reverse transfer capacitance
R
DS(on)
V
(GS)th
I
gss
I
dss
R
G
t
d(ON)
t
r
t
d(OFF)
t
f
E
on
E
off
Q
g
Q
gs
Q
gd
Tj=25°C
C
iss
C
oss
C
rss
R
thJH
Phase-Change
Material
f=1MHz
0
800
2080
77
16
pF
18
400
10
Rgoff=4
Ω
Rgon=4
Ω
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
20
V
DS
= V
GS
-6/22
0
1200
20
0,0044
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
70,00
110,00
1,6
4
200
10
mΩ
V
nA
µA
Ω
9
16
14
10
9
112
128
7
7
0,629
0,425
0,182
0,194
ns
16
700
16
mWs
106
27
31
nC
Thermal resistance chip to heatsink per chip
1,41
K/W
D1, D3, D5
Forward voltage
Reverse leakage current
Peak recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovered energy
Peak rate of fall of recovery current
V
F
I
rm
I
RRM
t
rr
Q
rr
E
rec
di(rec)max
/dt
10
1200
Rgon=4
Ω
16
700
16
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
0,8
1,40
1,70
1,7
100
V
µA
A
ns
µC
mWs
A/µs
6
8
12
12
0,137
0,123
0,050
0,044
1336
1726
Thermal resistance chip to heatsink per chip
R
thJH
Phase-Change
Material
1,70
K/W
C1, C2, C3
C value
C
47
nF
Thermistor
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
B-value
Vincotech NTC Reference
B
(25/50)
B
(25/100)
Tol. ±3%
Tol. ±3%
R
∆R/R
P
R100=1486
Ω
T=25°C
T=25°C
T=25°C
T=25°C
T=25°C
T=25°C
-5
200
2
3950
3996
B
22000
5
Ω
%
mW
mW/K
K
K
copyright Vincotech
3
Revision: 1
10-PZ123BA080MR-M909L28Y
T1, T3, T5 / D1, D3, D5
Figure 1
Typical output characteristics
I
D
= f(V
DS
)
100
I
C
(A)
T1, T3, T5 MOSFET
Figure 2
Typical output characteristics
I
D
= f(V
DS
)
100
I
C
(A)
T1, T3, T5 MOSFET
80
80
60
60
40
40
20
20
0
0
2
4
6
8
10
V
CE
(V)
12
0
0
2
4
6
8
10
V
CE
(V)
12
At
t
p
=
T
j
=
V
GS
from
µs
250
25
°C
0 V to 20 V in steps of 2 V
At
t
p
=
T
j
=
V
GS
from
250
µs
125
°C
0 V to 20 V in steps of 2 V
Figure 3
Typical transfer characteristics
I
D
= f(V
GS
)
35
I
D
(A)
T1, T3, T5 MOSFET
Figure 4
Typical diode forward current as
a function of forward voltage
I
F
= f(V
F
)
40
I
F
(A)
D1, D3, D5 FWD
30
T
j
= T
jmax
-25°C
25
T
j
= 25°C
30
T
j
= 25°C
T
j
= T
jmax
-25°C
20
20
15
10
10
5
0
0
2
4
6
8
10
12
14
V (V)
16
GS
0
0
1
2
3
4
V
F
(V)
5
At
t
p
=
V
DS
=
250
10
µs
V
At
t
p
=
250
µs
copyright Vincotech
4
Revision: 1
10-PZ123BA080MR-M909L28Y
T1, T3, T5 / D1, D3, D5
Figure 5
Typical switching energy losses
as a function of collector current
E = f(I
D
)
E (mWs)
2
T1, T3, T5 MOSFET
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R
G
)
E (mWs)
2
T1, T3, T5 MOSFET
E
on Low T
1,6
1,6
E
on Low T
1,2
1,2
E
on High T
E
on High T
0,8
0,8
E
off High T
0,4
0,4
E
off Low T
0
0
5
10
15
20
25
I
C
(A)
30
0
0
4
8
12
E
off High T
E
off Low T
16
R
G
(
Ω
)
20
With an inductive load at
T
j
=
°C
25/125
V
DS
=
700
V
V
GS
=
16
V
R
gon
=
4
Ω
R
goff
=
4
Ω
Figure 7
Typical reverse recovery energy loss
as a function of collector (drain) current
E
rec
= f(I
c
)
E (mWs)
0,07
With an inductive load at
T
j
=
25/125
°C
V
DS
=
700
V
V
GS
=
16
V
I
D
=
16
A
D1, D3, D5 FWD
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
E
rec
= f(R
G
)
E (mWs)
0,07
D1, D3, D5 FWD
0,06
0,06
0,05
0,05
0,04
0,04
E
rec Low T
0,03
0,03
E
rec Low T
E
rec High T
0,02
0,02
E
rec High T
0,01
0,01
0
0
5
10
15
20
25
I
C
(A)
30
0
0
4
8
12
16
R
G
(
Ω
)
20
With an inductive load at
T
j
=
°C
25/125
V
DS
=
700
V
V
GS
=
16
V
R
gon
=
4
Ω
R
goff
=
4
Ω
With an inductive load at
T
j
=
25/125
°C
V
DS
=
700
V
V
GS
=
16
V
I
D
=
16
A
copyright Vincotech
5
Revision: 1
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