10-PY07N3A015SM-M892F08Y
datasheet
flow
3xNPC 1
Features
● Neutral-point-Clamped inverter
● Ultra fast switching
● Low Inductance layout
● Very compact design
● Press-fit pins
650 V / 15 A
flow
1 housing
Target Applications
● Solar inverters
● UPS
● SMPS
Schematic
Types
● 10-PY07N3A015SM-M892F08Y
Maximum Ratings
T
j
=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Buck IGBT
Collector-emitter break down voltage
DC collector current
Pulsed collector current
Turn off safe operating area
Power dissipation
Gate-emitter peak voltage
Maximum Junction Temperature
P
tot
V
GE
T
jmax
V
CES
I
C
I
CRM
T
j
=T
j
max
t
p
limited by T
j
max
T
j
≤175°C
V
CE
<=V
CES
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
h
=80°C
T
c
=80°C
650
20
27
45
45
43
66
±20
175
V
A
A
A
W
V
°C
Buck FWD
Peak Repetitive Reverse Voltage
Forward average current
Surge forward current
Power dissipation
Maximum Junction Temperature
V
RRM
I
FAV
I
FSM
P
tot
T
jmax
T
j
=25°C
T
j
=T
j
max
t
p
=10ms
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
h
=80°C
T
c
=80°C
600
22
30
150
42
64
150
V
A
A
W
°C
copyright Vincotech
1
09 Oct. 2014 / Revision 2
10-PY07N3A015SM-M892F08Y
datasheet
Maximum Ratings
T
j
=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Boost IGBT
Collector-emitter break down voltage
DC collector current
Pulsed collector current
Turn off safe operating area
Power dissipation
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
P
tot
V
GE
t
SC
V
CC
T
jmax
T
j
≤150°C
V
GE
=15V
V
CES
I
C
I
CRM
T
j
=T
j
max
t
p
limited by T
j
max
T
j
≤150°C
V
CE
<=V
CES
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
h
=80°C
T
c
=80°C
650
25
33
60
60
59
90
±20
6
360
150
V
A
A
A
W
V
µs
V
°C
Boost Inverse Diode
Peak Repetitive Reverse Voltage
Forward average current
Repetitive peak forward current
Power dissipation
Maximum Junction Temperature
V
RRM
I
FAV
I
FRM
P
tot
T
jmax
T
c
=25°C
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
h
=80°C
T
c
=80°C
650
19
25
20
39
59
175
V
A
A
W
°C
Boost FWD
Peak Repetitive Reverse Voltage
Forward average current
Repetitive peak forward current
Power dissipation
Maximum Junction Temperature
V
RRM
I
FAV
I
FRM
P
tot
T
jmax
T
j
=25°C
T
h
=80°C
T
c
=80°C
650
19
25
20
T
h
=80°C
T
c
=80°C
39
59
175
V
A
A
W
°C
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
copyright Vincotech
2
09 Oct. 2014 / Revision 2
10-PY07N3A015SM-M892F08Y
datasheet
Maximum Ratings
T
j
=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Thermal Properties
Storage temperature
Operation temperature under switching condition
T
stg
T
op
-40…+125
-40…+(Tjmax - 25)
°C
°C
Insulation Properties
Insulation voltage
Creepage distance
Clearance
t=2s
DC voltage
4000
min 12,7
min 12,7
V
mm
mm
copyright Vincotech
3
09 Oct. 2014 / Revision 2
10-PY07N3A015SM-M892F08Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
V
r
[V] or
I
C
[A] or
V
GE
[V] or
V
CE
[V] or
I
F
[A] or
V
GS
[V]
V
DS
[V]
I
D
[A]
Value
Unit
T
j
Min
Typ
Max
Buck IGBT
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss
Turn-off energy loss
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
V
GE(th)
V
CEsat
I
CES
I
GES
R
gint
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oss
C
rss
Q
G
Phase-Change
Material
ʎ=3,4W/mK
15
520
15
Tj=25°C
f=1MHz
0
25
Tj=25°C
Rgoff=32 Ω
Rgon=32 Ω
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
V
CE
=V
GE
15
0
20
650
0
0,0004
15
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
3,3
4
1,64
1,77
4,7
2,22
0,04
200
none
73
72
8
9
72
86
10
11
0,199
0,277
0,072
0,127
930
240
4
38
nC
pF
V
V
mA
nA
Ω
ns
±15
350
15
mWs
Thermal resistance chip to heatsink
R
th(j-s)
2,20
K/W
Buck FWD
Diode forward voltage
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
V
F
I
r
I
RRM
t
rr
Q
rr
(
di
rf
/dt )
max
15
600
Rgon=32 Ω
±15
350
15
E
rec
Phase-Change
Material
ʎ=3,4W/mK
Tj=25°C
Tj=125°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
2,47
1,73
2,6
100
V
µA
A
ns
µC
A/µs
mWs
17
23
22
36
0,225
0,523
1736
1606
0,024
0,060
Thermal resistance chip to heatsink
R
th(j-s)
1,65
K/W
copyright Vincotech
4
09 Oct. 2014 / Revision 2
10-PY07N3A015SM-M892F08Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
V
r
[V] or
I
C
[A] or
V
GE
[V] or
V
CE
[V] or
I
F
[A] or
V
GS
[V]
V
DS
[V]
I
D
[A]
Value
Unit
T
j
Min
Typ
Max
Boost IGBT
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off incl diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss
Turn-off energy loss
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
V
GE(th)
V
CEsat
I
CES
I
GES
R
gint
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oss
C
rss
Q
G
Phase-Change
Material
ʎ=3,4W/mK
V
CE
=V
GE
15
0
20
600
0
0,00029
20
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
5,1
1,03
5,8
1,54
1,76
6,4
1,87
0,01
200
V
V
mA
nA
Ω
none
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
65
66
15
17
139
161
65
73
0,210
0,267
0,395
0,542
1100
f=1MHz
0
25
Tj=25°C
71
32
15
480
20
Tj=25°C
120
ns
Rgoff=16 Ω
Rgon=16 Ω
±15
350
15
mWs
pF
nC
Thermal resistance chip to heatsink
R
th(j-s)
1,60
K/W
Boost Inverse Diode
Diode forward voltage
V
F
Phase-Change
Material
ʎ=3,4W/mK
10
Tj=25°C
Tj=125°C
1,68
1,56
2,44
1,87
V
Thermal resistance chip to heatsink
R
th(j-s)
K/W
Boost FWD
Diode forward voltage
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovery energy
V
F
I
r
I
RRM
t
rr
Q
rr
(
di
rf
/dt )
max
10
650
Rgon=16 Ω
±15
350
15
E
rec
Phase-Change
Material
ʎ=3,4W/mK
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1,23
1,67
1,56
1,87
0,14
V
µA
A
ns
µC
A/µs
mWs
12
14
156
278
0,68
1,22
1738
153
0,187
0,348
2,44
Thermal resistance chip to heatsink
R
th(j-s)
K/W
Thermistor
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
B-value
B(25/50)
B(25/100)
R
Δ
R/R
P
R100=1486 Ω
Tj=25°C
Tj=100°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
-4,5
210
3,5
3884
3964
21511
+4,5
Ω
%
mW
mW/K
K
K
Vincotech NTC Reference
F
copyright Vincotech
5
09 Oct. 2014 / Revision 2
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