10-PY06NRA041FS-M413FY
preliminary datasheet
flowNPC1
Features
●
neutral point clamped inverter (NPC)
●
split output eliminates cross conduction
●
Ultra fast switching with MOSFET and SiC diodes
●
reactive power capability
●
low inductance layout
600V/41mΩ
flow1 12mm housing
Target Applications
●
solar inverter
●
UPS
Schematic
Types
●
10-PY06NRA041FS-M413FY
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
BOOST MOSFET
Drain to source breakdown voltage
DC drain current
Pulsed drain current
Power dissipation
Gate-source peak voltage
Maximum Junction Temperature
V
DS
I
D
I
Dpulse
P
tot
V
GS
T
j
max
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
h
=80°C
T
c
=80°C
600
29
37
272
89
135
±20
150
V
A
A
W
V
°C
BOOST FWD
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation
Maximum Junction Temperature
V
RRM
I
F
I
FRM
P
tot
T
j
max
T
j
=25°C
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
h
=80°C
T
c
=80°C
1200
17
22
36
32
48
150
V
A
A
W
°C
Copyright by Vincotech
1
Revision: 1
10-PY06NRA041FS-M413FY
preliminary datasheet
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
BUCK FWD
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
V
RRM
I
F
I
FRM
P
tot
T
j
max
T
j
=25°C
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
h
=80°C
T
c
=80°C
600
26
33
114
70
106
175
V
A
A
W
°C
BUCK MOSFET
Drain to source breakdown voltage
DC drain current
Pulsed drain current
Power dissipation
Gate-source peak voltage
Maximum Junction Temperature
V
DS
I
D
I
Dpulse
P
tot
Vgs
T
j
max
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
h
=80°C
T
c
=80°C
600
29
37
272
89
135
±20
150
V
A
A
W
V
°C
Thermal Properties
Storage temperature
Operation temperature under switching condition
T
stg
T
op
-40…+125
-40…+(Tjmax - 25)
°C
°C
Insulation Properties
Insulation voltage
Creepage distance
Clearance
V
is
t=2s
DC voltage
4000
min 12,7
min 12,7
V
mm
mm
Copyright by Vincotech
2
Revision: 1
10-PY06NRA041FS-M413FY
preliminary datasheet
Characteristic Values
Parameter
Symbol
V
GE
[V] or
V
GS
[V]
Conditions
V
r
[V] or
V
CE
[V] or
V
DS
[V]
I
C
[A] or
I
F
[A] or
I
D
[A]
T
j
Min
Value
Typ
Max
Unit
BOOST MOSFET
Static drain to source ON resistance
Gate threshold voltage
Gate to Source Leakage Current
Zero Gate Voltage Drain Current
Turn On Delay Time
Rise Time
Turn off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Total gate charge
Gate to source charge
Gate to drain charge
Input capacitance
Output capacitance
Reverse transfer capacitance
R
DS(on)
V
(GS)th
I
gss
I
dss
t
d(ON)
t
r
t
d(OFF)
t
f
E
on
E
off
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
R
thJH
Thermal grease
thickness≤50um
λ
= 1 W/mK
f=1MHz
0
100
Tj=25°C
Rgon=4
Ω
10
480
44
Rgoff=4
Ω
Rgon=4
Ω
V
GS
=V
DS
20
0
0
600
44
0,00296
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
0,04
0,09
3
Ω
3,6
100
5000
19
18
8
9
225
244
6
5
0,18
0,26
0,07
0,10
290
36
150
6530
360
tbd.
pF
nC
V
nA
nA
2,4
ns
10
400
15
mWs
Thermal resistance chip to heatsink per chip
0,79
K/W
BOOST FWD
Forward voltage
Reverse leakage current
Peak recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovered energy
Peak rate of fall of recovery current
V
F
I
rm
I
RRM
t
rr
Q
rr
E
rec
di(rec)max
/dt
R
thJH
Thermal grease
thickness≤50um
λ
= 1 W/mK
Rgon=4
Ω
10
400
15
10
400
18
15
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1,5
2,27
1,97
3,5
100
1000
50
60
20
32
1,31
3,02
0,41
1,04
8338
5554
2,21
V
μA
A
ns
μC
mWs
A/μs
Thermal resistance chip to heatsink per chip
K/W
BUCK FWD
Diode forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
V
F
I
RRM
t
rr
Q
rr
di(rec)max
/dt
Erec
Thermal grease
thickness≤50um
λ
= 1 W/mK
Rgon=4
Ω
10
400
15
16
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1,15
1,18
14
13
12
12
0,11
0,08
3315
2992
0,02
0,01
1,35
1,8
V
A
ns
μC
A/μs
mWs
Thermal resistance chip to heatsink per chip
R
thJH
K/W
Copyright by Vincotech
3
Revision: 1
10-PY06NRA041FS-M413FY
preliminary datasheet
Characteristic Values
Parameter
Symbol
V
GE
[V] or
V
GS
[V]
Conditions
V
r
[V] or
V
CE
[V] or
V
DS
[V]
I
C
[A] or
I
F
[A] or
I
D
[A]
T
j
Min
Value
Typ
Max
Unit
BUCK MOSFET
Static drain to source ON resistance
Gate threshold voltage
Gate to Source Leakage Current
Zero Gate Voltage Drain Current
Turn On Delay Time
Rise Time
Turn off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Total gate charge
Gate to source charge
Gate to drain charge
Input capacitance
Output capacitance
Reverse transfer capacitance
R
ds(on)
V
(GS)th
I
gss
I
dss
t
d(ON)
t
r
t
d(OFF)
t
f
E
on
E
off
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
R
thJH
Thermal grease
thickness≤50um
λ
= 1 W/mK
f=1MHz
0
100
Tj=25°C
10
480
44
Tj=25°C
Rgoff=4
Ω
Rgon=4
Ω
20
0
V
DS
=V
GS
0
600
44
0,00296
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
0,04
0,09
3
Ω
3,6
100
5000
26
25
5
6
177
196
9
12
0,09
0,10
0,03
0,04
290
36
150
6530
360
tbd.
pF
nC
V
nA
nA
2,4
ns
10
400
15
mWs
Thermal resistance chip to heatsink per chip
0,79
K/W
Thermistor
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
B-value
Vincotech NTC Reference
B
(25/50)
B
(25/100)
Tol. ±3%
Tol. ±3%
R
ΔR/R
P
R100=1486
Ω
T=25°C
T=100°C
T=25°C
Tj=25°C
Tj=25°C
Tj=25°C
-5
200
2
3950
3996
B
22000
+5
Ω
%
mW
mW/K
1/K
1/K
Copyright by Vincotech
4
Revision: 1
10-PY06NRA041FS-M413FY
preliminary datasheet
BUCK
Figure 1
Typical output characteristics
I
C
= f(V
CE
)
100
I
C
(A)
MOSFET
Figure 2
Typical output characteristics
I
C
= f(V
CE
)
100
I
C
(A)
MOSFET
80
80
60
60
40
40
20
20
0
0
1
2
3
4
V
CE
(V)
5
0
0
1
2
3
4
V
CE
(V)
5
At
t
p
=
T
j
=
V
GE
from
250
μs
25
°C
4 V to 14 V in steps of 1 V
At
t
p
=
T
j
=
V
GE
from
250
μs
125
°C
4 V to 14 V in steps of 1 V
Figure 3
Typical transfer characteristics
I
C
= f(V
GE
)
30
I
C
(A)
MOSFET
Figure 4
Typical diode forward current as
a function of forward voltage
I
F
= f(V
F
)
50
I
F
(A)
FWD
T
j
= T
jmax
-25°C
T
j
= 25°C
25
40
20
T
j
= T
jmax
-25°C
T
j
= 25°C
30
15
20
10
5
10
0
0
1
2
3
4
5
V (V)
GE
6
0
0
1
2
3
V
F
(V)
4
At
t
p
=
V
CE
=
250
10
μs
V
At
t
p
=
250
μs
Copyright by Vincotech
5
Revision: 1
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