70-W424NIA800SH-M800F
datasheet
flow
NPC 8w
Features
● 2400V NPC-topology (2x 1200V)
● High power screw interface
● Low inductive interface for external DC-capacitors
and paralleling on component level
● Snubber diode for optional asymmetrical inductance
● High speed buck IGBT´s
● Temperature sensor
2400 V / 800 A
2xflow SCREW 4w 12mm housing
Target Applications
● Solar inverter
● Wind Power
● Motor Drive
Schematic
Types
● 70-W424NIA800SH-M800F
Maximum Ratings
T
j
=25°C, unless otherwise specified
Parameter
Snubber Diode (D61, D62)
Repetitive peak reverse voltage
Forward average current
Surge forward current
I
2
t-value
Power dissipation
Maximum Junction Temperature
Symbol
Condition
Value
Unit
V
RRM
I
FAV
I
FSM
I
2
t
P
tot
T
jmax
sine,d=0.5
T
j
=T
jmax
t
p
=10ms, sin 180º
T
s
=80°C
T
c
=80°C
T
j
=150°C
1200
181
240
1080
5832
T
j
=T
jmax
T
s
=80°C
T
c
=80°C
323
490
175
V
A
A
A
2
s
W
°C
Buck IGBT (T11, T12)
Collector-emitter break down voltage
DC collector current
Repetitive peak collector current
Power dissipation
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
V
CE
I
C
I
CRM
P
tot
V
GE
t
SC
V
CC
T
jmax
T
j
≤150°C
V
GE
=15V
T
j
=T
jmax
t
p
limited by
T
jmax
T
j
=T
jmax
T
s
=80°C
T
c
=80°C
T
s
=80°C
T
c
=80°C
1200
651
800
2400
1759
2665
±20
10
800
175
V
A
A
W
V
µs
V
°C
copyright Vincotech
1
14 Nov 2015 / Revision 4
70-W424NIA800SH-M800F
datasheet
Maximum Ratings
T
j
=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Buck Diode (D11, D12)
Peak Repetitive Reverse Voltage
DC forward current
Surge Forward Current
Power dissipation
Maximum Junction Temperature
V
RRM
I
F
I
FSM
P
tot
T
jmax
T
j
=T
jmax
t
p
=10ms, sin 180º
T
j
=T
jmax
T
s
=80°C
T
c
=80°C
T
s
=80°C
T
c
=80°C
1200
540
711
4400
1131
1713
175
V
A
A
W
°C
Boost IGBT (T13, T14)
Collector-emitter break down voltage
DC collector current
Repetitive peak collector current
Power dissipation
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
V
CE
I
C
I
CRM
P
tot
V
GE
t
SC
V
CC
T
jmax
T
j
≤150°C
V
GE
=15V
T
j
=T
jmax
t
p
limited by
T
jmax
T
j
=T
jmax
T
s
=80°C
T
c
=80°C
T
s
=80°C
T
c
=80°C
1200
689
883
2400
1652
2503
±20
10
800
175
V
A
A
W
V
µs
V
°C
Boost Inverse Diode (D15, D16)
Peak Repetitive Reverse Voltage
DC forward current
Repetitive Forward Current
Power dissipation
Maximum Junction Temperature
V
RRM
I
F
I
FRM
P
tot
T
jmax
T
j
=T
jmax
t
p
limited by
T
jmax
T
j
=T
jmax
T
s
=80°C
T
c
=80°C
T
s
=80°C
T
c
=80°C
1200
680
680
1200
1759
2666
175
V
A
A
W
°C
Boost Diode (D14, D13)
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation
Maximum Junction Temperature
V
RRM
I
F
I
FRM
P
tot
T
jmax
T
j
=T
jmax
t
p
limited by
T
jmax
T
j
=T
jmax
T
s
=80°C
T
c
=80°C
T
s
=80°C
T
c
=80°C
1200
514
685
1200
905
1371
175
V
A
A
W
°C
copyright Vincotech
2
14 Nov 2015 / Revision 4
70-W424NIA800SH-M800F
datasheet
Maximum Ratings
T
j
=25°C, unless otherwise specified
Parameter
Thermal Properties
Storage temperature
Operation temperature under switching condition
Symbol
Condition
Value
Unit
T
stg
T
op
for power part
-40…+125
-40…+(T
jmax
- 25)
°C
°C
Insulation Properties
Insulation voltage
Creepage distance
Clearance
Stage
CTI
V
is
t=2s
DC voltage
4000
min 12,7
min 12,7
>200
V
mm
mm
copyright Vincotech
3
14 Nov 2015 / Revision 4
70-W424NIA800SH-M800F
datasheet
Characteristic values
Parameter
Symbol
Conditions
V
GE
[V]
or
V
GS
[V]
V
r
[V]
or
V
CE
[V]
or
V
DS
[V]
I
C
[A]
or
I
F
[A]
or
I
D
[A]
Value
Unit
T
j
[°C]
Min
Typ
Max
Snubber Diode
Forward voltage
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
Thermal resistance chip to heatsink
Thermal resistance chip to case
V
F
V
to
r
t
I
r
R
th(j-s)
R
th(j-c)
phase-change
material
λ = 3,4 W/mK
1200
200
200
200
25
125
25
125
25
125
25
150
1,91
1,85
1,25
1,11
0,003
0,004
2,54
V
V
mΩ
0,12
0,294
mA
K/W
0,194
Buck IGBT (T11, T12)
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink
Thermal resistance chip to case
V
GE(th)
V
CEsat
I
CES
I
GES
R
gint
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oss
C
rss
Q
G
R
th(j-s)
R
th(j-c)
V
CE
=V
GE
15
0
20
1200
0
0,0272
800
25
125
25
125
25
125
25
125
5,2
1,7
5,8
2,14
2,44
6,4
2,4
0,096
1920
V
V
mA
nA
Ω
0,25
25
125
25
125
25
125
25
125
25
125
25
125
151
135
42
40
195
231
24
48
41
50
26
43
44320
f=1MHz
0
25
25
2600
2560
±15
phase-change
material
λ = 3,4 W/mK
960
800
25
3700
0,052
ns
R
goff
=0,5 Ω
R
gon
=0,5 Ω
±15
600
824
mWs
pF
nC
K/W
0,035
Buck Diode (D11, D12)
Diode forward voltage
Reverse leakage current
Reverse recovery time
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Thermal resistance chip to heatsink
Thermal resistance chip to case
V
F
I
R
I
RRM
t
rr
Q
rr
(
di
rf
/dt )
max
E
rec
R
th(j-s)
R
th(j-c)
phase-change
material
λ = 3,4 W/mK
R
gon
=0,5 Ω
±15
600
1200
800
824
25
125
25
125
25
125
25
125
25
125
25
125
25
125
2,34
2,38
2,52
960
V
µA
A
ns
µC
A/µs
mWs
932
1319
165
193
64
136
16722
16606
22
56
0,081
K/W
0,054
copyright Vincotech
4
14 Nov 2015 / Revision 4
70-W424NIA800SH-M800F
datasheet
Characteristic values
Parameter
Symbol
Conditions
V
GE
[V]
or
V
GS
[V]
V
r
[V]
or
V
CE
[V]
or
V
DS
[V]
I
C
[A]
or
I
F
[A]
or
I
D
[A]
Value
Unit
T
j
[°C]
Min
Typ
Max
Boost IGBT (T13, T14)
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off incl diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink
Thermal resistance chip to case
V
GE(th)
V
CEsat
I
CES
I
GES
R
gint
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oss
C
rss
Q
G
R
th(j-s)
R
th(j-c)
V
CE
=V
GE
15
0
20
1200
0
0,0304
800
25
125
25
125
25
125
25
125
5
1,55
5,80
1,91
2,14
6,5
2,05
0,104
4800
V
V
mA
nA
Ω
0,9375
25
125
25
125
25
125
25
125
25
125
25
125
290
301
57
60
384
455
43
108
49
65
49
76
49200
f=1MHz
0
25
25
3240
2760
15
phase-change
material
λ = 3,4 W/mK
960
800
25
4060
0,058
ns
R
goff
=0,5 Ω
R
gon
=0,5 Ω
±15
600
800
mWs
pF
nC
K/W
0,038
Boost Inverse Diode (D15, D16)
Diode forward voltage
Thermal resistance chip to heatsink
Thermal resistance chip to case
V
F
R
th(j-s)
R
th(j-c)
phase-change
material
λ = 3,4 W/mK
25
600
125
1,35
1,90
1,84
0,054
2,05
V
K/W
0,036
Boost Diode (D14, D13)
Diode forward voltage
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
V
F
I
r
I
RRM
t
rr
Q
rr
(
di
rf
/dt )
max
E
rec
R
gon
=0,5 Ω
±15
600
1200
600
800
25
125
25
125
25
125
25
125
25
125
25
125
25
125
1,35
1,90
1,84
2,05
112
V
µA
A
ns
µC
A/µs
mWs
576
806
271
341
63
118
4456
6686
23
47
0,102
Thermal resistance chip to heatsink
Thermal resistance chip to case
R
th(j-s)
R
th(j-c)
phase-change
material
λ = 3,4 W/mK
K/W
0,067
copyright Vincotech
5
14 Nov 2015 / Revision 4
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