70-W224NIA400SH-M400P
datasheet
flow
NPC 4w
Features
● 2400V NPC-topology (2x 1200V)
● High power screw interface
● Low inductive interface for external DC-capacitors
and paralleling on component level
● Snubber diode for optional asymmetrical inductance
● High speed buck IGBT´s
● Temperature sensor
2400 V / 400 A
flow
SCREW 4w housing
Target Applications
● Solar inverter
● Wind Power
● Motor Drive
Schematic
Types
● 70-W224NIA400SH-M400P
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Buck IGBT ( T1 , T4 )
Collector-emitter break down voltage
DC collector current
Pulsed collector current
Turn off safe operating area
Power dissipation
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
P
tot
V
GE
t
SC
V
CC
T
j
max
T
j
≤150°C
V
GE
=15V
V
CE
I
C
I
Cpulse
T
j
=T
j
max
t
p
limited by T
j
max
V
CE
≤ 1200V, Tj ≤ T
op max
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
h
=80°C
T
c
=80°C
1200
326
400
1200
800
881
1335
±20
10
800
175
V
A
A
A
W
V
µs
V
°C
Buck Diode ( D5 , D6 )
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation
Maximum Junction Temperature
V
RRM
I
F
I
FRM
P
tot
T
j
max
T
j
=T
j
max
tp=10ms, sin 180°
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
h
=80°C
T
c
=80°C
1200
270
356
800
565
857
175
V
A
A
W
°C
copyright Vincotech
1
14 Jul 2015 / Revision 4
70-W224NIA400SH-M400P
datasheet
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Boost IGBT ( T2 , T3 )
Collector-emitter break down voltage
DC collector current
Pulsed collector current
Turn off safe operating area
Power dissipation
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
P
tot
V
GE
t
SC
V
CC
T
j
max
T
j
≤150°C
V
GE
=15V
V
CE
I
C
I
Cpuls
T
j
=T
j
max
t
p
limited by T
j
max
V
CE
≤ 1200V, Tj ≤ T
op max
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
h
=80°C
T
c
=80°C
1200
348
400
1200
800
826
1252
±20
10
800
175
V
A
A
A
W
V
µs
V
°C
Boost Inverse Diode ( D2 , D3 )
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation
Maximum Junction Temperature
V
RRM
I
F
I
FRM
P
tot
T
j
max
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
h
=80°C
T
c
=80°C
1200
400
400
600
881
1355
175
V
A
A
W
°C
Boost Diode ( D1 , D4 )
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation
Maximum Junction Temperature
V
RRM
I
F
I
FRM
P
tot
T
j
max
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
h
=80°C
T
c
=80°C
1200
257
342
600
452
685
175
V
A
A
W
°C
copyright Vincotech
2
14 Jul 2015 / Revision 4
70-W224NIA400SH-M400P
datasheet
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Snubber Diode ( D7 , D8 )
Repetitive peak reverse voltage
Forward average current
Surge forward current
I2t-value
Power dissipation
Maximum Junction Temperature
V
RRM
I
FAV
I
FSM
tp=10ms, sin 180°
I
2
t
P
tot
T
j
max
Tj=Tjmax
T
h
=80°C
T
c
=80°C
T
j
=150°C
730
162
245
175
A s
W
°C
2
1200
Tj=Tjmax
T
h
=80°C
T
c
=80°C
90
120
540
V
A
A
Thermal Properties
Storage temperature
Operation temperature under switching condition
T
stg
T
op
-40…+125
-40…+(Tjmax - 25)
°C
°C
Insulation Properties
Insulation voltage
Creepage distance
Clearance
Stage
CTI
V
is
t=2s
DC voltage
4000
min 12,7
min 12,7
>200
V
mm
mm
copyright Vincotech
3
14 Jul 2015 / Revision 4
70-W224NIA400SH-M400P
datasheet
Characteristic Values
Parameter
Symbol
Conditions
V
r
[V] or I
C
[A] or
V
GE
[V] or
V
CE
[V] or I
F
[A] or
V
GS
[V]
V
DS
[V]
I
D
[A]
Value
Unit
T
j
Min
Typ
Max
Buck IGBT ( T1 , T4 )
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink
Thermal resistance chip to case
V
GE(th)
V
CE(sat)
I
CES
I
GES
R
gint
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oss
C
rss
Q
Gate
R
thJH
R
thJC
Phase-Change
Material
λ = 3,4 W/mK
15
960
400
Tj=25°C
f=1MHz
0
25
Tj=25°C
Rgoff=1
Rgon=1
±15
600
398
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
V
CE
=V
GE
0,0136
15
0
20
1200
0
400
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
5,2
1,7
5,8
2,14
2,44
6,4
V
V
0,048
960
0,5
171
172
24
29
238
290
21
38
9,03
14,33
13,20
21,33
22160
1520
1280
1840
0,105
mA
nA
ns
mWs
pF
nC
K/W
0,069
Buck Diode ( D5 , D6 )
Diode forward voltage
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Thermal resistance chip to heatsink
Thermal resistance chip to case
V
F
I
R
400
1200
I
RRM
t
rr
Q
rr
di(rec)max
/dt
Erec
R
thJH
R
thJC
Phase-Change
Material
λ = 3,4 W/mK
Rgon=1
±15
600
398
Tj=25°C
Tj=125°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
2,34
2,38
480
506
624
86
117
34,86
57,89
14614
15212
15,14
26,14
0,163
V
µA
A
ns
µC
A/µs
mWs
K/W
0,108
copyright Vincotech
4
14 Jul 2015 / Revision 4
70-W224NIA400SH-M400P
datasheet
Characteristic Values
Parameter
Symbol
Conditions
V
r
[V] or I
C
[A] or
V
GE
[V] or
V
CE
[V] or I
F
[A] or
V
GS
[V]
V
DS
[V]
I
D
[A]
Value
Unit
T
j
Min
Typ
Max
Boost IGBT ( T2 , T3 )
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off incl diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink
Thermal resistance chip to case
V
GE(th)
V
CE(sat)
I
CES
I
GES
R
gint
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oss
C
rss
Q
Gate
R
thJH
R
thJC
Phase-Change
Material
λ = 3,4 W/mK
±15
960
400
Tj=25°C
f=1MHz
0
25
398
Tj=25°C
Rgoff=1
Rgon=1
±15
600
398
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
V
CE
=V
GE
15
0
1200
0,0152
400
20
0
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
5
5,80
1,91
2,14
6,5
V
V
0,052
2400
1,875
233
242
44
49
334
405
43
99
15,2
21,5
24,2
37,6
mA
nA
ns
mWs
24600
1620
1380
3700
0,112
K/W
0,074
nC
pF
Boost Inverse Diode ( D2 , D3 )
Diode forward voltage
Reverse leakage current
Thermal resistance chip to heatsink
Thermal resistance chip to case
V
F
I
r
R
thJH
R
thJC
Phase-Change
Material
λ = 3,4 W/mK
1200
300
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1,35
1,90
1,84
56
0,108
K/W
0,071
V
µA
Boost Diode ( D1 , D4 )
Diode forward voltage
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovery energy
Thermal resistance chip to heatsink
Thermal resistance chip to case
V
F
I
r
I
RRM
t
rr
Q
rr
di(rec)max
/dt
E
rec
R
thJH
R
thJC
Phase-Change
Material
λ = 3,4 W/mK
Rgon=1
±15
600
398
1200
300
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=125°C
Tj=125°C
1,35
1,90
1,84
56
368
403
251
341
34
59
3292
3343
13,60
24,53
V
µA
A
ns
µC
A/µs
mWs
K/W
0,204
0,135
copyright Vincotech
5
14 Jul 2015 / Revision 4
FPGA/CPLD
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
