70-W212NMA600SC-M200P
datasheet
flow
MNPC 4w
Features
● Mixed voltage NPC
● Low inductive
● High power screw interface
● Integrated DC-snubber capacitors
1200 V / 600 A
flow
SCREW 4w housing
Target Applications
● Solar inverter
● UPS
● High speed motor drive
Schematic
Types
● 70-W212NMA600SC-M200P
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
half bridge IGBT ( T1 , T4 )
Collector-emitter break down voltage
DC collector current
Repetitive peak collector current
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Turn off safe operating area (RBSOA)
Maximum Junction Temperature
V
CE
I
C
I
Cpulse
P
tot
V
GE
t
SC
V
CC
I
cmax
T
j
max
T
j
≤150°C
V
GE
=15V
V
CE max
= 1200V
T
vj max
= 150°C
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
h
=80°C
T
c
=80°C
1200
498
637
1800
1188
1799
±20
10
800
1200
175
V
A
A
W
V
µs
V
A
°C
neutral point FWD ( D2 , D3 )
Peak Repetitive Reverse Voltage
DC forward current
Surge forward current
I2t-value
Repetitive peak forward current
Power dissipation per FWD
Maximum Junction Temperature
V
RRM
I
F
I
FSM
t
p
= 10 ms, sine halfwave
It
I
FRM
P
tot
T
j
max
t
P
= 1 ms
T
j
=T
j
max
T
vj
< 150°C
T
h
=80°C
T
c
=80°C
2
T
j
=25°C
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
600
288
384
1250
T
vj
< 150°C
7800
1200
365
554
175
V
A
A
A
2
s
A
W
°C
copyright Vincotech
1
24 Mar. 2015 / Revision 6
70-W212NMA600SC-M200P
datasheet
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
neutral point IGBT ( T2 , T3 )
Collector-emitter break down voltage
DC collector current
Repetitive peak collector current
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Turn off safe operating area (RBSOA)
Maximum Junction Temperature
V
CE
I
C
I
Cpuls
P
tot
V
GE
t
SC
V
CC
I
cmax
T
j
max
T
j
≤150°C
V
GE
=15V
V
CE max
= 1200V
T
vj max
= 150°C
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
h
=80°C
T
c
=80°C
600
388
510
1800
594
900
±20
6
360
1200
175
V
A
A
W
V
µs
V
A
°C
half bridge FWD ( D1 , D4 )
Peak Repetitive Reverse Voltage
DC forward current
Surge forward current
I2t-value
Repetitive peak forward current
Power dissipation per FWD
Maximum Junction Temperature
V
RRM
I
F
I
FSM
t
p
=10ms , sin 180°
I
2
t
I
FRM
P
tot
T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
j
=150°C
16200
1800
633
960
175
2
A s
T
j
=25°C
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
1200
355
470
3600
V
A
A
A
W
°C
copyright Vincotech
2
24 Mar. 2015 / Revision 6
70-W212NMA600SC-M200P
datasheet
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
DC link Capacitor
Max.DC voltage
Operation Temperature
RMS Current
V
MAX
T
OP
I
RMS
630
-40...+105
10
V
°C
A
General Module Properties
Material of module baseplate
Material of internal isulation
Cu
Al2O3
Thermal Properties
Storage temperature
Operation temperature under switching condition
T
stg
T
op
for power part
-40…+125
-40…+(Tjmax - 25)
°C
°C
Insulation Properties
Insulation voltage
Creepage distance
Clearance
Comparative tracking index
CTI
V
is
t=2s
DC voltage
4000
min 12,7
min 12,7
>200
V
mm
mm
copyright Vincotech
3
24 Mar. 2015 / Revision 6
70-W212NMA600SC-M200P
datasheet
Characteristic Values
Parameter
Symbol
Conditions
V
r
[V] or I
C
[A] or
V
GE
[V] or
V
CE
[V] or I
F
[A] or
V
GS
[V]
V
DS
[V]
I
D
[A]
Value
Unit
T
j
Min
Typ
Max
half bridge IGBT ( T1 , T4 )
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. FWD
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
V
GE(th)
V
CE(sat)
I
CES
I
GES
R
gint
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oss
C
rss
Q
Gate
R
th(j-s)
R
th(j-c)
Phase-Change
Material
ʎ=3,4W/mK
15
960
640
Tj=25°C
f=1MHz
0
25
Tj=25°C
Rgoff=1
Rgon=1
±15
350
600
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
V
CE
=V
GE
0,024
15
0
20
1200
0
600
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
5
1
5,8
2,16
2,42
6,5
2,4
0,6
3000
V
V
mA
nA
1,25
296
310
57
64
350
410
62
83
12
17
20
31
37200
2320
2040
2800
0,08
K/W
0,06
nC
pF
ns
mWs
neutral point FWD ( D2 , D3 )
FWD forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
V
F
I
RRM
t
rr
Q
rr
di(rec)max
/dt
Erec
R
th(j-s)
R
th(j-c)
Phase-Change
Material
ʎ=3,4W/mK
Rgon=1
±15
350
600
600
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1,2
1,67
1,65
339
399
132
257
23
44
4888
3314
5
9
0,26
K/W
0,17
2,3
V
A
ns
µC
A/µs
mWs
neutral point IGBT ( T2 , T3 )
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off incl FWD
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
V
GE(th)
V
CE(sat)
I
CES
I
GES
R
gint
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oss
C
rss
Q
Gate
R
th(j-s)
R
th(j-c)
Phase-Change
Material
ʎ=3,4W/mK
15
480
600
Tj=25°C
f=1MHz
0
25
Tj=25°C
Rgoff=1
Rgon=1
±15
350
600
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
V
CE
=V
GE
15
0
20
600
0
0,0096
600
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
5
1
5,8
1,57
1,80
6,5
2,3
0,1
3000
0,5
244
250
49
53
306
325
48
67
8
13
15
22
36960
2304
1096
3760
0,16
K/W
0,11
nC
pF
V
V
mA
nA
ns
mWs
copyright Vincotech
4
24 Mar. 2015 / Revision 6
70-W212NMA600SC-M200P
datasheet
Characteristic Values
Parameter
Symbol
Conditions
V
r
[V] or I
C
[A] or
V
GE
[V] or
V
CE
[V] or I
F
[A] or
V
GS
[V]
V
DS
[V]
I
D
[A]
Value
Unit
T
j
Min
Typ
Max
half bridge FWD ( D1 , D4 )
FWD forward voltage
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovery energy
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
V
F
I
r
I
RRM
t
rr
Q
rr
di(rec)max
/dt
E
rec
R
th(j-s)
R
th(j-c)
Phase-Change
Material
ʎ=3,4W/mK
Rgon=1
±15
350
600
1200
600
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1
2,23
2,31
422
568
76
290
20
61
14692
12189
4
14
0,15
K/W
0,10
3
720
V
µA
A
ns
µC
A/µs
mWs
DC link Capacitor
Capacitance
Tolerance
Dissipation factor
Climatic category
T
J
=20ºC
40/105/56
C
-10
1360
+10
0,0004
µF
nH
mΩ
Thermistor
Rated resistance
Deviation of R
100
Power dissipation
Power dissipation constant
B-value
B-value
Vincotech NTC Reference
B
(25/50)
B
(25/100)
Tol. ±3%
Tol. ±3%
R
∆R/R
P
R100=1486
Tj=25°C
Tj=100°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
-12
200
2
3950
3998
B
22000
+12
%
mW
mW/K
K
K
Module Properties
Module inductance (from chips to PCB)
Module inductance (from PCB to PCB using Intercon board)
Resistance of Intercon boards (from PCB to PCB using Intercon board)
Mounting torque
Mounting torque
Terminal connection torque
Weight
L
sCE
L
sCE
Rcc
'1+EE'
M
M
M
G
Tc=25°C, per switch
Screw M4 - mounting according to valid application note
FSWB1-4TY-M-*-HI
Screw M5 - mounting according to valid application note
FSWB1-4TY-M-*-HI
Screw M6 - mounting according to valid application note
FSWB1-4TY-M-*-HI
2
4
2,5
5
3
1,5
2,2
6
5
710
nH
nH
mΩ
Nm
Nm
Nm
g
copyright Vincotech
5
24 Mar. 2015 / Revision 6
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