FZ06NPA045FP01
preliminary datasheet
flowNPC 0
Features
●
*PS: 45A parallel switch (40A PT and 99mΩ)
●
neutral point clamped inverter
●
reactive power capability
●
low inductance layout
600V/50A & 45A PS*
flow0 12mm housing
Target Applications
●
solar inverter
●
UPS
Schematic
Types
●
FZ06NPA045FP01
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Buck IGBT
Collector-emitter break down voltage
DC collector current
Repetitive peak collector current
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
V
CE
I
C
I
Cpulse
P
tot
V
GE
t
SC
V
CC
T
j
max
T
j
≤150°C
V
GE
=15V
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
h
=80°C
T
c
=80°C
600
31
41
225
54
82
±20
3
390
150
V
A
A
W
V
μs
V
°C
Buck Diode
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
V
RRM
I
F
I
FRM
P
tot
T
j
max
T
j
=25°C
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
c
=100°C
T
h
=80°C
T
c
=80°C
600
21
29
120
41
62
150
V
A
A
W
°C
Copyright by Vincotech
1
Revision: 4
FZ06NPA045FP01
preliminary datasheet
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Buck MOSFET
Drain to source breakdown voltage
DC drain current
Pulsed drain current
Power dissipation
Gate-source peak voltage
Maximum Junction Temperature
V
DS
I
D
I
Dpulse
P
tot
Vgs
T
j
max
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
Tc=25°C
T
h
=80°C
T
c
=80°C
600
16
21
93
54
97
±20
150
V
A
A
W
V
°C
Boost IGBT
Collector-emitter break down voltage
DC collector current
Repetitive peak collector current
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
V
CE
I
C
I
Cpuls
P
tot
V
GE
t
SC
V
CC
T
j
max
T
j
≤150°C
V
GE
=15V
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
h
=80°C
T
c
=80°C
600
50
50
225
85
129
±20
6
360
175
V
A
A
W
V
μs
V
°C
Boost Inverse Diode
Peak Repetitive Reverse Voltage
DC forward current
Power dissipation per Diode
Maximum Junction Temperature
V
RRM
I
F
P
tot
T
j
max
T
c
=25°C
T
j
=T
j
max
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
h
=80°C
T
c
=80°C
600
2
21
V
A
W
°C
150
Boost Diode
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
V
RRM
I
F
I
FRM
P
tot
T
j
max
T
j
=25°C
T
h
=80°C
T
c
=80°C
1200
15
21
36
T
h
=80°C
T
c
=80°C
30
46
150
V
A
A
W
°C
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
Copyright by Vincotech
2
Revision: 4
FZ06NPA045FP01
preliminary datasheet
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Thermal Properties
Storage temperature
Operation temperature under switching condition
T
stg
T
op
-40…+125
-40…+(Tjmax - 25)
°C
°C
Insulation Properties
Insulation voltage
Creepage distance
Clearance
V
is
t=2s
DC voltage
4000
min 12,7
min 12,7
V
mm
mm
Copyright by Vincotech
3
Revision: 4
FZ06NPA045FP01
preliminary datasheet
Characteristic Values
Parameter
Symbol
Conditions
V
GE
[V] or
V
GS
[V]
V
r
[V] or
V
CE
[V] or
V
DS
[V]
I
C
[A] or
I
F
[A] or
I
D
[A]
T
j
Min
Value
Typ
Max
Unit
Buck IGBT *
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Input capacitance **
Output capacitance
Reverse transfer capacitance
Gate charge **
V
GE(th)
V
CE(sat)
I
CES
I
GES
R
gint
C
ies
C
oss
C
rss
Q
Gate
Thermal grease
thickness≤50um
λ
= 1 W/mK
15
300
20
Tj=25°C
f=1MHz
0
25
Tj=25°C
VCE=VGE
15
0
±20
600
0
0.00025
45
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
4.5
5.5
2.21
2.21
7
3
2.6
250
300
none
2,2+4,7
150
pF
80
142+70
nC
V
V
mA
nA
Ω
nF
Thermal resistance chip to heatsink per chip
* see dinamic characteristic at
Buck MosFET
**additional value stands for built-in capacitor
R
thJH
1.30
K/W
Buck Diode
Diode forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
V
F
I
RRM
t
rr
Q
rr
di(rec)max
/dt
Erec
Thermal grease
thickness≤50um
λ
= 1 W/mK
Rgon=8
Ω
±15
350
30
30
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
3.18
2.37
75
84
12.3
20.0
0.43
0.99
22562
15818
0.11
0.18
1.72
3.3
V
A
ns
μC
A/μs
mWs
Thermal resistance chip to heatsink per chip
R
thJH
K/W
Buck MOSFET
Static drain to source ON resistance
Gate threshold voltage
Gate to Source Leakage Current
Zero Gate Voltage Drain Current
Turn On Delay Time
Rise Time
Turn off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Total gate charge
Gate to source charge
Gate to drain charge
Input capacitance
Output capacitance
R
ds(on)
V
(GS)th
I
gss
I
dss
t
d(ON)
t
r
t
d(OFF)
t
f
E
on
E
off
Q
g
Q
gs
Q
gd
C
iss
f=1MHz
C
oss
R
thJH
Thermal grease
thickness≤50um
λ
= 1 W/mK
0
100
Tj=25°C
130
±15
350
30
Tj=25°C
Rgon=8
Ω
**
Rgoff=8
Ω
**
20
0
15
V
DS
=V
GS
0
600
15
0.003
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
109
219
3
mΩ
3.9
200
10
104
99
8
8
250
258
18
4
0.08
0.24
0.06
0.12
60
14
20
2800
pF
80
nC
V
nA
uA
2.1
ns
±15
350
30
mWs
Thermal resistance chip to heatsink per chip
** see schematic of the Gate-complex at characteristic figures
1.29
K/W
Copyright by Vincotech
4
Revision: 4
FZ06NPA045FP01
preliminary datasheet
Characteristic Values
Parameter
Symbol
Conditions
V
GE
[V] or
V
GS
[V]
V
r
[V] or
V
CE
[V] or
V
DS
[V]
I
C
[A] or
I
F
[A] or
I
D
[A]
T
j
Min
Value
Typ
Max
Unit
Boost IGBT
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off incl diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
V
GE(th)
V
CE(sat)
I
CES
I
GES
R
gint
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oss
C
rss
Q
Gate
Thermal grease
thickness≤50um
λ
= 1 W/mK
15
480
75
Tj=25°C
f=1MHz
0
25
Tj=25°C
Rgon=8
Ω
Rgoff=8
Ω
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
V
CE
=V
GE
15
0
20
600
0
0.0012
45
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
5
1
5.8
1.28
1.31
6.5
1.9
0.03
650
none
40
37
10
13
454
502
64
87
0.72
0.96
0.85
1.16
4620
288
137
470
nC
pF
V
V
mA
nA
Ω
ns
±15
350
30
mWs
Thermal resistance chip to heatsink per chip
R
thJH
1.11
K/W
Boost Inverse Diode
Diode forward voltage
V
F
Thermal grease
thickness≤50um
λ
= 1 W/mK
20
Tj=25°C
Tj=125°C
9.07
9.43
4.36
V
Thermal resistance chip to heatsink per chip
R
thJH
K/W
Boost Diode
Diode forward voltage
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovery energy
V
F
I
r
I
RRM
t
rr
Q
rr
di(rec)max
/dt
E
rec
Thermal grease
thickness≤50um
λ
= 1 W/mK
Rgon=8
Ω
±15
350
30
1200
18
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1.5
2.61
2.16
3.5
100
92
112
37.1
51.9
2.8
5.7
20796
20514
0.54
1.39
2.32
V
μA
A
ns
μC
A/μs
mWs
Thermal resistance chip to heatsink per chip
R
thJH
K/W
Thermistor
Rated resistance*
R
25
R
100
Tol. ±13%
Tol. ±5%
Tj=25°C
Tj=100°C
19.1
1411
22
1486
210
4000
24.9
1560
kΩ
Ω
mW
K
Power dissipation
B-value
* see details on
Thermistor
charts on
Figure 2.
P
B
(25/100)
Tol. ±3%
Tj=25°C
Tj=25°C
Copyright by Vincotech
5
Revision: 4
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