The +Suffix identifies RoHS Compliance. See our web site
for RoHS Compliance methodologies and qualifications
General Description
SAV-581+ is an ultra-low noise, high IP3 transistor device, manufactured using E-PHEMT* technology
enabling it to work with a single positive supply voltage. It has outstanding Noise Figure, particularly be-
low 2.5 GHz, and when combining this noise figure with high IP3 performance in a single device it makes
it an ideal amplifier for demanding base station applications. We offer these units assembled into a com-
plete module, 50Ω in/out, noise matched and fully specified. For more information please see our TAMP
family of models on our web site.
simplified schematic and pin description
DR AIN
DR AIN 1
4 S OUR C E
G AT E
S OUR C E 2
3 G AT E
S OUR C E
SOT-343 (SC-70) PACKAGE
Function
Source
Gate
Drain
Pin Number
2&4
3
1
Gate used for RF input
Drain used for RF output
Description
Source terminal, normally connected to ground
* Enhancement mode Pseudomorphic High Electron Mobility Transistor.
a. Suitability for model replacement within a particular system must be determined by and is solely the responsibility of the customer based on, among other things, electrical perfor-
mance criteria, stimulus conditions, application, compatibility with other components and environmental conditions and stresses.
b. The Avago ATF-58143 part number is used for identification and comparison purposes only.
Notes
A.
Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.
B.
Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.
C.
The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled
to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
www.minicircuits.com
P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
Mini-Circuits
®
REV. C
M123887
ED-13377
SAV-581+
150319
Page 1 of 11
E-PHEMT
Electrical Specifications at T
AMB
=25°C, Frequency 0.45 to 6 GHz
Symbol
V
GS
V
TH
I
DSS
SAV-581+
Parameter
Operational Gate Voltage
Threshold Voltage
Saturated Drain Current
Condition
DC Specifications
V
DS
=3V, I
DS
=30 mA
V
DS
=3V, I
DS
=4 mA
V
DS
=3V, V
GS
=0 V
V
DS
=3V, Gm=∆ I
DS
/∆V
GS
∆V
GS
=V
GS1
-V
GS2
V
GS1
=V
GS
at I
DS
=30 mA
V
GS2
=V
GS1
+0.05V
V
GD
=V
GS
=-3V
RF Specifications, Z
0
=50 Ohms (Figure 1)
V
DS
=3V, I
DS
=30 mA
f=0.9 GHz
f=2.0 GHz
f=3.9 GHz
f=5.8 GHz
f=0.9 GHz
f=2.0 GHz
f=0.9 GHz
f=2.0 GHz
f=3.9 GHz
f=5.8 GHz
f=0.9 GHz
f=2.0 GHz
f=0.9 GHz
f=2.0 GHz
f=3.9 GHz
f=5.8 GHz
f=0.9 GHz
f=2.0 GHz
f=0.9 GHz
f=2.0 GHz
f=3.9 GHz
f=5.8 GHz
f=0.9 GHz
f=2.0 GHz
Min.
0.28
0.18
—
—
230
—
—
Typ.
0.39
0.26
1.0
—
—
327
—
—
Max.
0.5
0.38
5.0
—
—
560
—
—
200
Units
V
V
µA
G
M
Transconductance
mS
I
GSS
NF
(1)
Gate leakage Current
µA
Noise Figure
0.4
0.5
0.8
1.5
0.4
0.5
22.3
17.0
12.0
8.3
22.3
17.0
28.6
30.6
35.2
39.3
27.8
30.3
18.5
19.0
19.2
18.1
19.5
20.5
—
0.9
—
—
—
—
—
18.5
—
—
—
—
dB
V
DS
=4V, I
DS
=30 mA
V
DS
=3V, I
DS
=30 mA
Gain
Gain
V
DS
=4V, I
DS
=30 mA
V
DS
=3V, I
DS
=30 mA
OIP3
Output IP3
V
DS
=4V, I
DS
=30 mA
V
DS
=3V, I
DS
=30 mA
Power output at 1 dB
Compression
V
DS
=4V, I
DS
=30 mA
—
15.0
—
—
—
—
—
27.0
—
—
—
—
dB
dBm
P1dB
(2)
dBm
Absolute Maximum Ratings
(3)
Symbol
V
V
GS(4)
V
GD(4)
I
DS(4)
I
GS
P
DISS
P
IN(5)
T
CH
T
OP
T
STD
Θ
JC
(4)
DS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Gate-Drain Voltage
Drain Current
Gate Current
Total Dissipated Power
RF Input Power
Channel Temperature
Operating Temperature
Storage Temperature
Thermal Resistance
Max.
5
-5 to 0.7
-5 to 0.7
100
2
500
17
150
-40 to 85
-65 to 150
160
Units
V
V
V
mA
mA
mW
dBm
°C
°C
°C
°C/W
Notes:
(1) Includes test board loss (tested on Mini-Circuits TB-471+ test board)
(2) During Compression, I
DS
was allowed to increase.
(3) Operation of this device above any one of these parameters may cause permanent damage.
(4) Assumes DC quiescent conditions.
(5) I
GS
is limited to 2 mA during test.
Notes
A.
Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.
B.
Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.
C.
The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled
to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
www.minicircuits.com
P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
Mini-Circuits
®
Page 2 of 11
E-PHEMT
Characterization Test Circuit
SAV-581+
Fig 1.
Block Diagram of Test Circuit used for characterization. (DUT soldered on Mini-Circuits Test Board TB-471+)
Gain, Output power at 1dB compression (P1 dB) and output IP3 (OIP3) are measured using R&S Network Analyzer ZVA-24.
Noise Figure measured using Agilent Noise Figure meter N8975A and Noise Source N4000A.
Conditions:
1. Drain voltage (with reference to source, V
DS
)= 3 or 4V as shown.
2. Gate Voltage (with reference to source, V
GS
) is set to obtain desired Drain-Source current (IDS) as shown in graphs or specification table.
3. Gain: Pin= -25dBm
4. Output IP3 (OIP3): Two tones, spaced 1 MHz apart, 0 dBm/tone at output.
5. No external matching components used.
Fig 2.
Test Board used for characterization, Mini-Circuits P/N TB-471+ (Material: Rogers 4350, Thickness: 0.02”)
Notes
A.
Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.
B.
Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.
C.
The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled
to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
www.minicircuits.com
P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
(1) Includes test board loss, set-up and conditions per Figure 1.
(2) Measured using HP4155B semiconductor parameter analyzer.
(3) F Min is minimum Noise Figure.
(4) Drain current was allowed to increase during compression measurement.
Notes
A.
Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.
B.
Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.
C.
The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled
to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
www.minicircuits.com
P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
Mini-Circuits
®
Page 4 of 11
E-PHEMT
SAV-581+
GAIN vs IDS @ 0.9 GHz (1)
OIP3 vs IDS @ 2GHz (1)
45
VDS=3V
VDS=4V
25.0
24.5
24.0
23.5
23.0
22.5
22.0
21.5
21.0
20.5
20.0
19.5
19.0
10
15
20
VDS=3V
VDS=4V
40
OIP3 (dBm)
25
30 35 40
IDS (mA)
45
50
55
60
GAIN (dB)
35
30
25
20
15
10
15
20
25
30
35
40
IDS (mA)
45
50
55
60
OIP3 vs IDS @ 0.9 GHz (1)
45
40
VDS=3V
VDS=4V
25
24
23
22
21
20
19
18
17
16
15
10
15
20
P1dB vs IDS @ 2 GHz (1,4)
VDS=3V
VDS=4V
OIP3 (dBm)
35
30
25
20
15
10
15
20
25
30
35
40
IDS (mA)
45
50
55
60
P1dB (dBm)
25
30
35
40
IDS (mA)
45
50
55
60
P1dB vs IDS @ 0.9 GHz (1,4)
25
24
23
22
21
20
19
18
17
16
15
10
15
20
VDS=3V
VDS=4V
3.0
2.7
2.4
2.1
1.8
1.5
1.2
0.9
0.6
0.3
0.0
NF vs FREQUENCY & TEMPERATURE (1)
@ VDS=3V, IDS=30mA
-40°C
+25°C
+85°C
25
30
35
40
IDS (mA)
45
50
55
60
NOISE FIGURE (dB)
(1) Includes test board loss, set-up and conditions per Figure 1.
(2) Measured using HP4155B semiconductor parameter analyzer.
(3) F Min is minimum Noise Figure.
(4) Drain current was allowed to increase during compression measurement.
Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.
B.
Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.
C.
The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled
to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
www.minicircuits.com
P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
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