Schottky Barrier Diode
RB751VM-40FH
Application
High speed switching
Dimensions
(Unit : mm)
1.25±0.1
0.1±0.1
0.05
Datasheet
AEC-Q101 Qualified
Land
size figure
(Unit : mm)
0.8MIN.
0.9MIN.
Features
1.7±0.1
(UMD2)
2) Low I
R
3) High reliability
0.3±0.05
2.5±0.2
1) Ultra small mold type.
UMD2
Structure
0.7±0.2
0.1
Cathode
Construction
Silicon epitaxial planar
ROHM : UMD2
JEITA : SC-90/A
JEDEC :SOD-323
dot (year week factory)
Taping
specifications
(Unit : mm)
4.0±0.1
2.0±0.05
φ1.55±0.05
1.550.05
1.75±0.1
Anode
0.3±0.1
3.5±0.05
8.0±0.2
1.40±0.1
4.0±0.1
φ1.05
1.05
1.0±0.1
Absolute
maximum ratings
(Ta= 25°C)
Parameter
Reverse voltage (repetitive)
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak (60Hz・1cyc)
Junction temperature
Storage temperature
Electrical
characteristics
(Ta = 25°C)
Parameter
Forward voltage
Reverse current
Capacitance between terminals
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
Symbol
V
RM
V
R
Io
I
FSM
Tj
Tstg
Limits
40
30
30
200
150
40
to
150
Unit
V
V
mA
mA
°C
°C
2.75
Symbol
V
F
I
R
Ct
Min.
-
-
-
Typ.
-
-
2
Max.
0.37
0.5
-
Unit
V
A
pF
Conditions
I
F
=1mA
V
R
=30V
V
R
=1V , f=1MHz
1/5
2015.04 - Rev.D
2.8±0.1
2.1
RB751VM-40FH
Electrical
characteristic curves
Data Sheet
100
1000
FORWARD CURRENT : I
F
(mA)
REVERSE CURRENT : I
R
(A)
10
Tj = 125°C
Tj = 75°C
100
10
1
0.1
Tj = 125°C
Tj = 75°C
1
Tj = 25°C
Tj =
25°C
Tj = 25°C
0.1
Tj =
25°C
0.01
0.001
0.01
0 100 200 300 400 500 600 700 800 9001000
0
10
20
30
FORWARD VOLTAGE : V
F
(mV)
V
F
-I
F
CHARACTERISTICS
REVERSE VOLTAGE : V
R
(V)
V
R
-I
R
CHARACTERISTICS
10
f = 1MHz
320
FORWARD VOLTAGE : V
F
(mV)
CAPACITANCE BETWEEN
TERMINALS : Ct(pF)
310
300
290
280
270
260
250
Tj=25°C
I
F
=1mA
n=30pcs
AVE : 282.4mV
1
0.1
0
10
20
30
REVERSE VOLTAGE : V
R
(V)
V
R
-Ct CHARACTERISTICS
V
F
DISPERSION MAP
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
2/5
2015.04 - Rev.D
RB751VM-40FH
Electrical
characteristic curves
Data Sheet
1000
900
10
Tj=25°C
V
R
=30V
n=30pcs
9
Tj=25°C
f=1MHz
V
R
=1V
n=10pcs
REVERSE CURRENT : I
R
(nA)
CAPACITANCE BETWEEN
TERMINALS : Ct(pF)
800
700
600
500
400
300
200
100
0
AVE : 245.0nA
8
7
6
5
4
3
2
1
0
AVE : 2.1pF
I
R
DISPERSION MAP
Ct DISPERSION MAP
20
30
REVERSE RECOVERY TIME : trr(ns)
PEAK SURGE
FORWARD CURRENT : I
FSM
(A)
I
FSM
15
8.3ms
1cyc.
25
20
15
10
5
0
I
F
=0.1A
I
R
=0.1A
Irr=0.1*I
R
10
AVE : 7.7ns
5
AVE : 3.24A
0
I
FSM
DISPERSION MAP
trr DISPERSION MAP
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
3/5
2015.04 - Rev.D
RB751VM-40FH
Electrical
characteristic curves
Data Sheet
10
20
PEAK SURGE
FORWARD CURRENT : I
FSM
(A)
PEAK SURGE
FORWARD CURRENT : I
FSM
(A)
I
FSM
8.3ms
8.3ms
I
FSM
15
time
1cyc.
5
10
5
0
1
10
100
0
0.1
1
10
100
NUMBER OF CYCLES
I
FSM
-CYCLE CHARACTERISTICS
TIME : t(ms)
I
FSM
-t CHARACTERISTICS
1000
0.05
Rth(j-a)
D = 1/2
Rth(j-c)
0.04
TRANSIENT
THERMAL IMPEDANCE : Rth (°C/W)
100
FORWARD POWER
DISPERSION : P
F
(W)
0.03
Sin(θ=180)
0.02
DC
0.01
10
Mounted on glass epoxy board
1
0.001
0.00
0.1
10
1000
0.00
0.01
0.02
0.03
0.04
0.05
TIME : t(s)
Rth-t CHARACTERISTICS
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-P
F
CHARACTERISTICS
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
4/5
2015.04 - Rev.D
RB751VM-40FH
Electrical
characteristic curves
Data Sheet
0.01
0.1
0A
0V
t
Io
0.008
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
0.08
T
REVERSE POWER
DISPERSION : P
R
(W)
V
R
D=t/T
V
R
=15V
Tj=150°C
0.006
DC
0.004
D = 1/2
0.002
Sin(θ=180)
0.06
DC
D = 1/2
0.04
0.02
Sin(θ=180)
0
0
10
20
30
0
0
25
50
75
100
125
150
REVERSE VOLTAGE : V
R
(V)
V
R
-P
R
CHARACTERISTICS
AMBIENT TEMPERATURE : Ta(°C)
DERATING CURVE (Io-Ta)
0.10
0A
0V
t
Io
5
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
0.08
ELECTROSTATIC
DISCHARGE TEST ESD(kV)
T
V
R
D=t/T
V
R
=15V
Tj=150°C
4.5
4
3.5
3
2.5
2
1.5
1
0.5
AVE : 0.418kV
AVE : 3.34kV
0.06
DC
D = 1/2
0.04
0.02
Sin(θ=180)
0.00
0
25
50
75
100
125
150
0
C=200pF
R=0
C=100pF
R=1.5k
CASE TEMPERATURE : Tc(°C)
DERATING CURVE (Io-Tc)
ESD DISPERSION MAP
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
5/5
2015.04 - Rev.D
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
