10-FZ06NRA060FU-P967F08
10-PZ06NRA060FU-P967F08Y
datasheet
flowNPC 0
Features
● neutral point clamped inverter
● reactive power capability
● clip-in pcb mounting
● low inductance layout
650 V / 60 A
flow0 12mm housing
Target Applications
● solar inverter
● UPS
Schematic
Types
● 10-FZ06NRA060FU-P967F08
● 10-PZ06NRA060FU-P967F08Y
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Buck & Boost Inv. Diode
Repetitive peak reverse voltage
Forward current per diode
Maximum repetitive forward current
I t-value
Power dissipation per Diode
Maximum Junction Temperature
2
V
RRM
I
FAV
I
FRM
tp limited by Tjmax
I t
P
tot
T
j
max
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
2
600
DC current
T
h
=80°C
T
c
=80°C
15
20
20
T
j
=25°C
9,5
26
39
175
V
A
A
A
2
s
W
°C
Buck IGBT
Collector-emitter break down voltage
DC collector current
Pulsed collector current
Turn off safe operating area
Power dissipation per IGBT
Gate-emitter peak voltage
Maximum Junction Temperature
P
tot
V
GE
T
j
max
V
CES
I
C
I
Cpulse
T
j
=T
j
max
t
p
limited by T
j
max
T
j
≤150°C
V
CE
<=V
CES
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
h
=80°C
T
c
=80°C
650
53
70
180
180
108
163
±20
175
V
A
A
A
W
V
°C
copyright Vincotech
1
10 Jun. 2015 / Revision 4
10-FZ06NRA060FU-P967F08
10-PZ06NRA060FU-P967F08Y
datasheet
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Buck Diode
Peak Repetitive Reverse Voltage
DC forward current
Non-repetitive Peak Surge Current
Power dissipation per Diode
Maximum Junction Temperature
V
RRM
I
F
I
FSM
P
tot
T
j
max
T
j
=25°C
T
j
=T
j
max
60Hz Single Half-Sine Wave
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
h
=80°C
T
c
=80°C
600
27
36
300
40
60
150
V
A
A
W
°C
Boost IGBT
Collector-emitter break down voltage
DC collector current
Pulsed collector current
Turn off safe operating area
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
P
tot
V
GE
t
SC
V
CC
T
j
max
T
j
≤150°C
V
GE
=15V
V
CES
I
C
I
Cpuls
T
j
=T
j
max
t
p
limited by T
j
max
T
j
≤150°C
V
CE
<=V
CES
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
h
=80°C
T
c
=80°C
600
46
63
225
225
68
103
±20
6
360
175
V
A
A
A
W
V
µs
V
°C
Boost Diode
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
V
RRM
I
F
I
FRM
P
tot
T
j
max
T
j
=25°C
T
h
=80°C
T
c
=80°C
1200
16
21
36
T
h
=80°C
T
c
=80°C
32
48
150
V
A
A
W
°C
T
j
=T
j
max
t
p
limited by T
j
max
20kHz Square Wave
T
j
=T
j
max
Thermal Properties
Storage temperature
Operation temperature under switching condition
T
stg
T
op
-40…+125
-40…+(Tjmax - 25)
°C
°C
Insulation Properties
Insulation voltage
Creepage distance
Clearance
V
is
t=2s
DC voltage
4000
min 12,7
9,15
V
mm
mm
copyright Vincotech
2
10 Jun. 2015 / Revision 4
10-FZ06NRA060FU-P967F08
10-PZ06NRA060FU-P967F08Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
V
r
[V] or I
C
[A] or
V
GE
[V] or
V
CE
[V] or I
F
[A] or
V
GS
[V]
V
DS
[V]
I
D
[A]
Value
Unit
T
j
Min
Typ
Max
Buck & Boost Inv. Diode
Forward voltage
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
V
F
V
to
r
t
I
r
R
thJH
Thermal grease
thickness≤50u
m
λ = 1 W/mK
600
10
10
10
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1,25
1,66
1,52
1,16
1,00
0,05
0,05
1,95
V
V
Ω
0,027
mA
Thermal resistance chip to heatsink per chip
3,66
K/W
Buck IGBT
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
V
GE(th)
V
CE(sat)
I
CES
I
GES
R
gint
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oss
C
rss
Q
Gate
R
thJH
Thermal grease
thickness≤50u
m
λ = 1 W/mK
±15
400
60
Tj=25°C
f=1MHz
0
30
Tj=25°C
Rgoff=4 Ω
Rgon=4 Ω
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
VCE=VGE
15
0
20
600
0
0,00025
30
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
3,9
4,5
1,51
1,52
5,6
2,1
0,03
230
none
49
50
4
4
90
115
5
6
0,17
0,35
0,18
0,38
2915
270
85
189
nC
pF
V
V
mA
nA
Ω
ns
±15
350
30
mWs
Thermal resistance chip to heatsink per chip
0,88
K/W
Buck Diode
Diode forward voltage
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
V
F
I
r
I
RRM
t
rr
Q
rr
di(rec)max
/dt
Erec
Thermal grease
thickness≤50u
m
λ = 1 W/mK
Rgon=4 Ω
±15
350
30
600
30
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
2,15
1,61
2,8
100
50
59
14
26
0,36
0,94
16743
8913
0,022
0,098
1,77
V
µA
A
ns
µC
A/µs
mWs
Thermal resistance chip to heatsink per chip
R
thJH
K/W
copyright Vincotech
3
10 Jun. 2015 / Revision 4
10-FZ06NRA060FU-P967F08
10-PZ06NRA060FU-P967F08Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
V
r
[V] or I
C
[A] or
V
GE
[V] or
V
CE
[V] or I
F
[A] or
V
GS
[V]
V
DS
[V]
I
D
[A]
Value
Unit
T
j
Min
Typ
Max
Boost IGBT
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off incl diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
V
GE(th)
V
CE(sat)
I
CES
I
GES
R
gint
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oss
C
rss
Q
Gate
R
thJH
Thermal grease
thickness≤50u
m
λ = 1 W/mK
15
480
75
Tj=25°C
f=1MHz
0
25
Tj=25°C
Rgoff=4 Ω
Rgon=4 Ω
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
V
CE
=V
GE
15
0
20
600
0
0,0012
50
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
5
1,05
5,8
1,31
1,40
6,5
1,85
0,0038
600
none
87
88
11
12
177
204
85
93
0,37
0,54
1,69
2,25
4620
288
137
465
nC
pF
V
V
mA
nA
Ω
ns
±15
350
50
mWs
Thermal resistance chip to heatsink per chip
1,40
K/W
Boost Diode
Diode forward voltage
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovery energy
V
F
I
r
I
RRM
t
rr
Q
rr
di(rec)max
/dt
E
rec
R
thJH
Thermal grease
thickness≤50u
m
λ = 1 W/mK
Rgon=4 Ω
±15
350
50
1200
18
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
2,43
2,10
3,3
100
69
77
25
123
3,42
6,27
9632
5392
1,04
1,97
2,21
V
µA
A
ns
µC
A/µs
mWs
Thermal resistance chip to heatsink per chip
K/W
Thermistor
Rated resistance
Deviation of R25
Power dissipation
Power dissipation constant
B-value
B-value
Vincotech NTC Reference
B(25/50)
B(25/100)
R
∆R/R
P
R100=1486 Ω
T=25°C
T=100°C
T=25°C
T=25°C
T=25°C
T=25°C
-4,5
210
3,5
3884
3964
F
21500
4,5
Ω
%
mW
mW/K
K
K
copyright Vincotech
4
10 Jun. 2015 / Revision 4
10-FZ06NRA060FU-P967F08
10-PZ06NRA060FU-P967F08Y
datasheet
Buck
Figure 1
Typical output characteristics
I
C
= f(V
CE
)
150
I
C
(A)
IGBT
Figure 2
Typical output characteristics
I
C
= f(V
CE
)
150
I
C
(A)
IGBT
125
125
100
100
75
75
50
50
25
25
0
0
1
2
3
4
V
CE
(V)
5
0
0
1
2
3
4
V
CE
(V)
5
At
t
p
=
T
j
=
V
GE
from
250
µs
25
°C
7 V to 17 V in steps of 1 V
At
t
p
=
T
j
=
V
GE
from
250
µs
125
°C
7 V to 17 V in steps of 1 V
Figure 3
Typical transfer characteristics
I
C
= f(V
GE
)
60
I
C
(A)
IGBT
Figure 4
Typical diode forward current as
a function of forward voltage
I
F
= f(V
F
)
120
I
F
(A)
FWD
T
j
= T
jmax
-25°C
50
T
j
= 25°C
100
T
j
= T
jmax
-25°C
T
j
= 25°C
40
80
30
60
20
40
10
20
0
0
2
4
6
8
V
GE
(V)
10
0
0
1
2
3
4
V
F
(V)
5
At
t
p
=
V
CE
=
250
10
µs
V
At
t
p
=
250
µs
copyright Vincotech
5
10 Jun. 2015 / Revision 4
下载中心专版
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
