10-FZ12NMA080SH-M269F
datasheet
flowmMNPC0
Features
●
mixed voltage component topology
●
neutral point clamped inverter
●
reactive power capability
●
low inductance layout
1200V/80A & 600V/50A
flow0 12mm housing
Target Applications
●
solar inverter
●
UPS
Schematic
Types
●
10-FZ12NMA080SH-M269F
Maximum Ratings
Tj=25° unless otherwise specified
C,
Parameter
Symbol
Condition
Value
Unit
Half Bridge IGBT
Collector-emitter break down voltage
DC collector current
Repetitive peak collector current
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
V
CE
I
C
I
Cpulse
P
tot
V
GE
t
SC
V
CC
T
j
max
T
j
≤150°
C
V
GE
=15V
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°
C
C
T
c
=80°
T
h
=80°
C
T
c
=80°
C
1200
66
84
320
158
240
±20
6
360
175
V
A
A
W
V
µs
V
°
C
Neutral Point FWD
Peak Repetitive Reverse Voltage
DC forward current
Surge forward current
I2t-value
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
V
RRM
I
F
I
FSM
t
p
=8,3ms , sin 180°
I
2
t
I
FRM
P
tot
T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°
C
T
c
=80°
C
T
c
=25°
C
370
60
44
66
150
A
2
s
A
W
°
C
T
j
=25°
C
T
j
=T
j
max
T
h
=80°
C
T
c
=80°
C
600
26
36
300
V
A
A
copyright
by
Vincotech
1
Revision: 4
10-FZ12NMA080SH-M269F
datasheet
Maximum Ratings
Tj=25° unless otherwise specified
C,
Parameter
Symbol
Condition
Value
Unit
Neutral Point IGBT
Collector-emitter break down voltage
DC collector current
Repetitive peak collector current
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
V
CE
I
C
I
Cpuls
P
tot
V
GE
t
SC
V
CC
T
j
max
T
j
≤150°
C
V
GE
=15V
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°
C
C
T
c
=80°
T
h
=80°
C
T
c
=80°
C
600
36
46
150
56
85
±20
6
360
175
V
A
A
W
V
µs
V
°
C
Half Bridge FWD
Peak Repetitive Reverse Voltage
DC forward current
Surge forward current
I2t-value
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
V
RRM
I
F
I
FSM
t
p
=8,3ms , sin 180°
I
2
t
I
FRM
P
tot
T
j
max
20kHz Square Wave
T
j
=T
j
max
C
T
h
=80°
T
c
=80°
C
T
c
=25°
C
440
70
45
68
150
A
2
s
A
W
°
C
T
j
=25°
C
T
h
=80°
C
T
c
=80°
C
1200
25
35
325
V
A
A
T
j
=T
j
max
Thermal Properties
Storage temperature
Operation temperature under switching condition
T
stg
T
op
-40…+125
-40…+(Tjmax - 25)
°
C
C
°
Insulation Properties
Insulation voltage
Creepage distance
Clearance
V
is
t=2s
DC voltage
4000
min 12,7
min 12,7
V
mm
mm
copyright
by
Vincotech
2
Revision: 4
10-FZ12NMA080SH-M269F
datasheet
Characteristic Values
Parameter
Symbol
V
GE
[V] or
V
GS
[V]
Conditions
V
r
[V] or
V
CE
[V] or
V
DS
[V]
I
C
[A] or
I
F
[A] or
I
D
[A]
T
j
Min
Value
Typ
Max
Unit
Half Bridge IGBT
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
V
GE(th)
V
CE(sat)
I
CES
I
GES
R
gint
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oss
C
rss
Q
Gate
Thermal grease
thickness≤50um
λ
= 1 W/mK
15
960
40
Tj=25°
C
f=1MHz
0
25
Tj=25°
C
Rgon=8
Rgoff=8
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
VCE=VGE
15
0
20
1200
0
0,002
100
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
5
1
5,80
2,10
2,43
6,5
2,5
500
1,2
V
V
uA
uA
none
125
126
20
23
219
282
43
73
0,47
0,70
0,98
1,65
ns
±15
350
40
mWs
4660
300
130
370
nC
pF
Thermal resistance chip to heatsink per chip
R
thJH
0,60
K/W
Neutral Point FWD
Diode forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
V
F
I
RRM
t
rr
Q
rr
di(rec)max
/dt
30
Rgon=8
±15
350
40
Erec
Thermal grease
thickness≤50um
λ
= 1 W/mK
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
1
2,46
1,86
31
43
18
38
0,30
0,95
7783
4120
0,02
0,12
2,8
V
A
ns
µC
A/µs
mWs
Thermal resistance chip to heatsink per chip
R
thJH
1,61
K/W
copyright
by
Vincotech
3
Revision: 4
10-FZ12NMA080SH-M269F
datasheet
Characteristic Values
Parameter
Symbol
V
GE
[V] or
V
GS
[V]
Conditions
V
r
[V] or
V
CE
[V] or
V
DS
[V]
I
C
[A] or
I
F
[A] or
I
D
[A]
T
j
Min
Value
Typ
Max
Unit
Neutral Point IGBT
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off incl diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
V
GE(th)
V
CE(sat)
I
CES
I
GES
R
gint
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oss
C
rss
Q
Gate
Thermal grease
thickness≤50um
λ
= 1 W/mK
15
480
50
Tj=25°
C
f=1MHz
0
25
C
Tj=25°
Rgon=8
Rgoff=8
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
V
CE
=V
GE
15
0
20
600
0
0,0008
50
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
5
1,1
5,8
1,54
1,75
6,5
2
100
650
V
V
uA
nA
none
99
102
10
13
183
206
80
99
0,49
0,72
1,16
1,50
ns
±15
350
41
mWs
3140
200
93
310
nC
pF
Thermal resistance chip to heatsink per chip
R
thJH
1,30
K/W
Half Bridge FWD
Diode forward voltage
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovery energy
V
F
I
r
I
RRM
t
rr
Q
rr
di(rec)max
/dt
30
1200
Rgon=8
±15
350
41
E
rec
Thermal grease
thickness≤50um
λ
= 1 W/mK
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
1,5
2,23
1,91
3,4
100
V
µA
A
ns
µC
A/µs
mWs
64
79
29
172
2,7
6,1
8246
4626
0,74
1,79
Thermal resistance chip to heatsink per chip
R
thJH
1,55
K/W
Thermistor
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
B-value
Vincotech NTC Reference
B(25/50) Tol. ±3%
B(25/100) Tol. ±3%
R
∆R/R
P
R100=1486
T=25°
C
T=100°
C
T=25°
C
T=25°
C
T=25°
C
T=25°
C
-5
200
2
3950
3996
B
22000
5
%
mW
mW/K
K
K
copyright
by
Vincotech
4
Revision: 4
10-FZ12NMA080SH-M269F
datasheet
Buck
half bridge IGBT
and
neutral point FRED
Figure 1
Typical output characteristics
I
C
= f(V
CE
)
120
I
C
(A)
IGBT
Figure 2
Typical output characteristics
I
C
= f(V
CE
)
120
I
C
(A)
IGBT
100
100
80
80
60
60
40
40
20
20
0
0
1
2
3
4
V
CE
(V)
5
0
0
1
2
3
4
V
CE
(V)
5
At
t
p
=
T
j
=
V
GE
from
250
µs
25
°C
6 V to 16 V in steps of 1 V
At
t
p
=
T
j
=
V
GE
from
250
µs
125
°C
6 V to 16 V in steps of 1 V
Figure 3
Typical transfer characteristics
I
C
= f(V
GE
)
75
I
C
(A)
IGBT
Figure 4
Typical diode forward current as
a function of forward voltage
I
F
= f(V
F
)
100
I
F
(A)
FRED
T
j
= T
jmax
-25°
C
60
80
45
60
T
j
= 25°
C
T
j
= T
jmax
-25°
C
30
40
T
j
= 25°
C
15
20
0
0
2
4
6
8
10
V
GE
(V)
12
0
0
0,8
1,6
2,4
3,2
V
F
(V)
4
At
t
p
=
V
CE
=
250
10
µs
V
At
t
p
=
250
µs
copyright
by
Vincotech
5
Revision: 4
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