10-FZ07NBA075SM-P916L58
datasheet
flow
BOOST 0 symmetric
Features
●
●
●
●
High efficiency symmetric boost
Ultra high switching frequency
Clip-In PCB mounting
Low Inductance Layout
650 V / 75 A
flow
0 12mm housing
Schematic
Target applications
● Solar inverters
● UPS
● Power supplies
Types
● 10-FZ07NBA075SM-P916L58
Maximum Ratings
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Boost Switch
Collector-emitter voltage
Collector current
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
Maximum Junction Temperature
V
CES
I
C
I
CRM
P
tot
V
GES
T
jmax
T
j
=
T
jmax
t
p
limited by
T
jmax
T
j
=
T
jmax
T
s
= 80 °C
T
s
= 80 °C
650
57
225
97
±20
175
V
A
A
W
V
°C
Copyright Vincotech
1
22 Feb. 2016 / Revision 1
10-FZ07NBA075SM-P916L58
datasheet
Maximum Ratings
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Boost Diode
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Maximum Junction Temperature
V
RRM
I
F
I
FRM
P
tot
T
jmax
T
j
=
T
jmax
T
s
= 80°C
T
j
=
T
jmax
T
s
= 80°C
650
59
150
78
175
V
A
A
W
°C
Boost Inverse Diode
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Maximum Junction Temperature
V
RRM
I
F
I
FRM
P
tot
T
jmax
T
j
=
T
jmax
T
s
= 80°C
T
j
=
T
jmax
T
s
=
80°C
650
36
60
61
175
V
A
A
W
°C
Module Properties
Thermal Properties
Storage temperature
Operation temperature under switching
condition
T
stg
T
jop
-40…+125
-40…+(T
jmax
- 25)
°C
°C
Isolation Properties
Isolation voltage
Creepage distance
Clearance
Comparative Tracking Index
CTI
V
isol
DC Voltage
t
p
= 2 s
4000
min. 12,7
9,53
> 200
V
mm
mm
Copyright Vincotech
2
22 Feb. 2016 / Revision 1
10-FZ07NBA075SM-P916L58
datasheet
Characteristic Values
Parameter
Symbol
Conditions
V
CE
[V]
V
GE
[V]
V
GS
[V]
V
GS
[V]
V
r
[V]
I
C
[A]
I
D
[A]
I
F
[A]
T
j
[°C]
Min
Value
Typ
Max
Unit
Boost Switch
Static
Gate-emitter threshold voltage
V
GE(th)
V
GE
=
V
CE
0,00075 25
25
Collec tor-emitter saturation voltage
V
CEsat
15
75
125
150
Collec tor-emitter c ut-off current
Gate-emitter leakage c urrent
Internal gate resistance
Input capacitance
Output capacitance
Reverse transfer capac itance
Gate c harge
I
CES
I
GES
r
g
C
ies
C
oes
C
res
Q
g
15
520
75
25
f = 1 MHz
0
25
25
0
20
650
0
25
25
none
4300
75
16
166
nC
pF
3,3
4
1,67
1,84
1,89
40
120
µA
nA
Ω
4,7
2,22
V
V
Thermal
Thermal resistance junc tion to sink
R
th(j-s)
phase-change
material
ʎ
= 3,4 W /mK
0,98
K/W
IGBT Switching
Turn-on delay time
t
d(on)
R
goff
= 4 Ω
Rise time
t
r
R
gon
= 4 Ω
25
125
150
25
125
150
25
125
150
25
125
150
25
125
150
25
125
150
23
23
23
14
15
16
116
131
135
4
8
10
1,058
1,486
1,591
0,277
0,481
0,527
ns
Turn-off delay time
t
d(off)
15/0
350
75
Fall time
t
f
Q
rFWD
= 2,4 µC
Q
rFWD
= 4,6 µC
Q
rFWD
= 5,3 µC
Turn-on energy (per pulse)
E
on
mWs
Turn-off energy (per pulse)
E
off
Copyright Vincotech
3
22 Feb. 2016 / Revision 1
10-FZ07NBA075SM-P916L58
datasheet
Characteristic Values
Parameter
Symbol
Conditions
V
CE
[V]
V
GE
[V]
V
GS
[V]
V
GS
[V]
V
r
[V]
I
C
[A]
I
D
[A]
I
F
[A]
T
j
[°C]
Min
Value
Typ
Max
Unit
Boost Diode
Static
25
Forward voltage
V
F
75
125
150
Reverse leakage c urrent
I
r
650
25
1,53
1,49
1,47
3,8
µA
1,77
V
Thermal
Thermal resistance junc tion to sink
R
th(j-s)
phase-change
material
ʎ
= 3,4 W /mK
1,23
K/W
FWD Switching
Peak recovery current
I
RRM
25
125
150
25
125
150
25
125
150
25
125
150
25
125
150
51
69
74
84
109
123
2,383
4,616
5,343
0,511
1,036
1,222
750
682
570
A
Reverse recovery time
t
rr
di /dt = 5120 A/µs
di /dt = 4804 A/µs 15/0
di /dt = 5399 A/µs
ns
Recovered charge
Q
r
350
75
µC
Reverse recovered energy
E
rec
mWs
Peak rate of fall of recovery current
(di
rf
/dt )
max
A/µs
Boost Inverse Diode
Static
Forward voltage
Reverse leakage c urrent
V
F
I
r
650
30
25
150
25
1,64
1,56
0,36
1,87
V
µA
Thermal
Thermal resistance junc tion to sink
R
th(j-s)
phase-change
material
ʎ
= 3,4 W /mK
1,56
K/W
Copyright Vincotech
4
22 Feb. 2016 / Revision 1
10-FZ07NBA075SM-P916L58
datasheet
Characteristic Values
Parameter
Symbol
Conditions
V
CE
[V]
V
GE
[V]
V
GS
[V]
V
GS
[V]
V
r
[V]
I
C
[A]
I
D
[A]
I
F
[A]
T
j
[°C]
Min
Value
Typ
Max
Unit
Thermistor
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
B-value
Vincotech NTC Reference
B
(25/50)
Tol. ±1%
R
Δ
R/R
P
R
100
= 1484 Ω
25
100
25
25
25
25
-5
22
5
5
1,5
3962
4000
I
kΩ
%
mW
mW/K
K
K
B
(25/100)
Tol. ±1%
Copyright Vincotech
5
22 Feb. 2016 / Revision 1
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
