10-FZ073BA030SM02-M575L38
datasheet
flowBOOST 0
Features
●
●
●
●
High efficient triple booster
Included capacitor
Very high switching frequency
Very compact design
650 V / 30 A
flow
0 12mm housing
Schematic
Target applications
● Solar Inverter
Types
● 10-FZ073BA030SM02-M575L38
Maximum Ratings
T
j
=25°C, unless otherwise specified
Parameter
T
j
=
Symbol
Condition
Value
Unit
Boost Switch
Collector-emitter voltage
Collector current
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
Maximum Junction Temperature
V
CES
I
C
I
CRM
P
tot
V
GES
T
jmax
T
j
=T
j
max
t
p
limited by
T
j
max
T
j
=T
j
max
T
S
=80°C
T
S
=80°C
650
28
90
57
±20
175
V
A
A
W
V
°C
Copyright Vincotech
1
24 Jul. 2015 / Revision 1
10-FZ073BA030SM02-M575L38
datasheet
Parameter
Symbol
Conditions
Value
Unit
Boost Diode
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Maximum Junction Temperature
V
RRM
I
F
I
FRM
P
tot
T
jmax
T
j
=T
jmax
T
h
=80°C
T
j
=T
jmax
T
h
=80°C
650
29
180
52
175
V
A
A
W
°C
Parameter
Symbol
Conditions
Value
Unit
Boost Inverse Diode
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
Surge (non-repetitive) forward current
Total power dissipation
Maximum Junction Temperature
V
RRM
I
F
I
FSM
P
tot
T
jmax
T
j
=T
jmax
50Hz Single Half Sine Wave
T
j
=T
jmax
T
h
=80°C
T
h
=80°C
650
30
150
58
175
V
A
A
W
°C
Parameter
Symbol
Conditions
Value
Unit
DC Link Capacitor
Maximum DC voltage
Operation Temperature
V
MAX
T
op
1000
-55…+125
V
°C
Module Properties
Parameter
Symbol
Conditions
Value
Unit
Thermal Properties
Storage temperature
Operation Junction Temperature
T
stg
T
jop
-40…+125
-40…+(T
jmax
- 25)
°C
°C
Isolation Properties
Isolation voltage
Creepage distance
Clearance
Comparative Tracking Index
CTI
V
isol
DC voltage
t
p
=2s
4000
min 12,7
9,22
>200
V
mm
mm
Copyright Vincotech
2
24 Jul. 2015 / Revision 1
10-FZ073BA030SM02-M575L38
datasheet
Characteristic Values
Boost Switch
T
j
=
Parameter
Symbol
Conditions
Value
Unit
V
GE
[V]
V
CE
[V]
I
C
[A]
T
j
[ °C]
Min
Typ
Max
Static
Gate-emitter threshold voltage
V
GE(th)
V
GE
=V
CE
0,0003
25
125
25
Collec tor-emitter saturation voltage
V
CEsat
15
30
125
150
Collec tor-emitter c ut-off current
Gate-emitter leakage c urrent
Internal gate resistance
Input capacitance
Reverse transfer capac itance
I
CES
I
GES
r
g
C
ies
f=1MHz
C
res
0
25
25
7,7
0
20
650
0
25
125
25
125
none
2100
pF
120
40
µA
nA
1,69
1,92
2,22
V
3,3
4
4,7
V
Thermal
Thermal resistance junc tion to sink
R
th(j-s)
Phase-Change
Material
ʎ
=3,4W/mK
1,67
K/W
IGBT Switching
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy (per pulse)
Turn-off energy (per pulse)
t
d(on)
t
r
t
d(off)
15/0
t
f
E
on
E
off
Q
rFWD
= 0,3 µC
Q
rFWD
= 1,1 µC
400
30
R
goff
= 16
R
gon
= 16
25
125
25
125
25
125
25
125
25
125
25
125
22
21
6
8
158
175
3
5
0,385
0,512
0,138
0,252
ns
mWs
Copyright Vincotech
3
24 Jul. 2015 / Revision 1
10-FZ073BA030SM02-M575L38
datasheet
Boost Diode
Parameter
Symbol
Conditions
V
r
[V]
I
F
[A]
T
j
[°C]
Min
Value
Typ
Max
Unit
Static
25
Forward voltage
V
F
30
125
150
Reverse leakage c urrent
I
r
665
25
150
2,46
2,03
-
10
-
µA
2,6
V
Thermal
Thermal resistance junc tion to sink
R
th(j-s)
Phase-Change
Material
ʎ
=3,4W/mK
1,83
K/W
FWD Switching
Peak recovery current
Reverse recovery time
Recovered charge
Reverse recovered energy
Peak rate of fall of recovery current
I
RRM
t
rr
Q
r
E
rec
(di
rf
/dt )
max
di /dt = 4188 A/µs
15/0
di /dt = 3749 A/µs
400
30
25
125
25
125
25
125
25
125
25
125
28
36
17
77
0,336
1,091
0,040
0,251
6280
2364
A
ns
µC
mWs
A/µs
Boost Inverse Diode
Parameter
Symbol
Conditions
V
r
[V]
I
F
[A]
T
j
[°C]
Min
Value
Typ
Max
Unit
Static
25
Forward voltage
V
F
15
125
150
Reverse leakage c urrent
I
r
650
25
150
10
µA
2,48
1,73
2,93
V
Thermal
Thermal resistance junc tion to sink
R
th(j-s)
Phase-Change
Material
ʎ
=3,4W/mK
1,65
K/W
Copyright Vincotech
4
24 Jul. 2015 / Revision 1
10-FZ073BA030SM02-M575L38
datasheet
DC Link Capacitor
Parameter
Symbol
Conditions
T
j
[°C]
Min
Value
Typ
Max
Unit
Static
Capacitance per leg
Tolerance
C
-10
47
+10
nF
%
Thermistor
Parameter
Symbol
Conditions
V
GE
[V]
V
CE
[V]
I
C
[A]
T
j
[ °C]
Min
Value
Typ
Max
Unit
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
B-value
Vincotech NTC Reference
R
Δ
R/R
P
R100=1486
25
100
25
25
-12
22
+12
200
2
3950
3998
B
k
%
mW
mW/K
K
K
B
(25/50)
Tol. ±3%
25
25
B
(25/100)
Tol. ±3%
Copyright Vincotech
5
24 Jul. 2015 / Revision 1
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