10-FZ06NRA084FP02-P969F78
10-PZ06NRA084FP02-P969F78Y
flow
NPC 0
Features
●
*PS: 75A parallel switch (75A and 99m
●
neutral point clamped inverter
●
reactive power capability
●
low inductance layout
MOSFET)
600V/75A & 99m
flow
0 12mm housing
PS*
Target Applications
●
solar inverter
●
UPS
Schematic
Types
●
10-FZ06NRA084FP03-P969F78
●
10-PZ06NRA084FP03-P969F78Y
Maximum Ratings
Tj=25° unless otherwise specified
C,
Parameter
Symbol
Condition
Value
Unit
Boost Inv. Diode
Repetitive peak reverse voltage
Forward current per diode
Maximum repetitive forward current
I2t-value
Power dissipation per Diode
Maximum Junction Temperature
V
RRM
I
FAV
I
FRM
t
p
=10ms
It
P
tot
T
j
max
T
j
=T
j
max
T
h
=80°
C
C
T
c
=80°
2
600
DC current
T
h
=80°
C
T
c
=80°
C
7
11
20
T
j
=25°
C
9,5
44
66
175
V
A
A
A
2
s
W
°
C
Buck IGBT
Collector-emitter break down voltage
DC collector current
Pulsed collector current
Turn off safe operating area
Power dissipation per IGBT
Gate-emitter peak voltage
Maximum Junction Temperature
P
tot
V
GE
T
j
max
T
j
=T
j
max
T
h
=80°
C
T
c
=80°
C
V
CE
I
C
I
Cpulse
T
j
=T
j
max
t
p
limited by T
j
max
T
h
=80°
C
T
c
=80°
C
600
61
80
225
225
108
163
±20
175
V
A
A
A
W
V
°
C
copyright Vincotech
1
Revision: 1
10-FZ06NRA084FP02-P969F78
10-PZ06NRA084FP02-P969F78Y
Maximum Ratings
Tj=25° unless otherwise specified
C,
Parameter
Symbol
Condition
Value
Unit
Buck Diode
Peak Repetitive Reverse Voltage
DC forward current
Non-repetitive Peak Surge Current
Power dissipation per Diode
Maximum Junction Temperature
V
RRM
I
F
I
FSM
P
tot
T
j
max
T
j
=25°
C
T
j
=T
j
max
60Hz Single Half-Sine Wave
T
j
=T
j
max
T
h
=80°
C
C
T
c
=80°
T
h
=80°
C
T
c
=80°
C
600
25
34
300
40
61
150
V
A
A
W
°
C
Buck MOSFET
Drain to source breakdown voltage
DC drain current
Pulsed drain current
Power dissipation
Gate-source peak voltage
Maximum Junction Temperature
V
DS
I
D
I
Dpulse
P
tot
Vgs
T
j
max
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°
C
T
c
=80°
C
T
h
=80°
C
T
c
=80°
C
600
17
21
112
60
91
±20
150
V
A
A
W
V
°
C
Boost IGBT
Collector-emitter break down voltage
DC collector current
Pulsed collector current
Turn off safe operating area
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
P
tot
V
GE
t
SC
V
CC
T
j
max
T
j
≤150°
C
V
GE
=15V
T
j
=T
j
max
T
h
=80°
C
T
c
=80°
C
V
CE
I
C
I
Cpuls
T
j
=T
j
max
t
p
limited by T
j
max
T
h
=80°
C
T
c
=80°
C
600
58
75
225
225
93
141
±20
6
360
175
V
A
A
A
W
V
µs
V
°
C
Boost Diode
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
V
RRM
I
F
I
FRM
P
tot
T
j
max
T
j
=T
j
max
t
p
limited by T
j
max,
20 kHz Square Wave
T
j
=T
j
max
T
h
=80°
C
C
T
c
=80°
T
h
=80°
C
T
c
=80°
C
1200
22
29
70
51
77
175
V
A
A
W
°
C
copyright Vincotech
2
Revision: 1
10-FZ06NRA084FP02-P969F78
10-PZ06NRA084FP02-P969F78Y
Maximum Ratings
Tj=25° unless otherwise specified
C,
Parameter
Symbol
Condition
Value
Unit
Thermal Properties
Storage temperature
Operation temperature under switching condition
T
stg
T
op
-40…+125
-40…+(Tjmax - 25)
°
C
°
C
Insulation Properties
Insulation voltage
Creepage distance
Clearance
V
is
t=2s
DC voltage
4000
min 12,7
min 12,7
V
mm
mm
copyright Vincotech
3
Revision: 1
10-FZ06NRA084FP02-P969F78
10-PZ06NRA084FP02-P969F78Y
Characteristic Values
Parameter
Symbol
Conditions
V
GE
[V] or
V
GS
[V]
V
r
[V] or
V
CE
[V] or
V
DS
[V]
I
C
[A] or
I
F
[A] or
I
D
[A]
T
j
Min
Value
Typ
Max
Unit
Boost Inv. Diode
Forward voltage
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
V
F
V
to
r
t
I
r
R
thJH
R
thJC
Thermal grease
thickness≤50um
λ
= 1 W/mK
600
10
10
10
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
9,44
7,24
8,32
6,62
0,11
0,06
0,027
V
V
mA
2,17
K/W
1,43
Buck IGBT *
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Input capacitance **
Output capacitance
Reverse transfer capacitance
Gate charge**
V
GE(th)
V
CE(sat)
I
CES
I
GES
R
gint
C
ies
C
oss
C
rss
Q
Gate
Thermal grease
thickness≤50um
λ
= 1 W/mK
15
480
75
Tj=25°
C
f=1MHz
0
25
Tj=25°
C
VCE=VGE
15
0
20
600
0
0,00025
75
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
3,5
4,5
1,69
1,87
6
2,5
250
±400
V
V
mA
nA
none
4+4,7
400
pF
115
248+70
nC
nF
Thermal resistance chip to heatsink per chip
* see dinamic characteristic at
Buck MosFET
**additional value stands for built-in capacitor
R
thJH
0,88
K/W
Buck Diode
Diode forward voltage
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
V
F
I
r
I
RRM
t
rr
Q
rr
di(rec)max
/dt
30
600
Rgon=4
±15
350
40
Erec
Thermal grease
thickness≤50um
λ
= 1 W/mK
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
2,67
1,86
2,7
100
V
µA
A
ns
µC
A/µs
mWs
80
90
13
22
0,59
1,18
22422
14099
0,13
0,19
Thermal resistance chip to heatsink per chip
R
thJH
1,73
K/W
copyright Vincotech
4
Revision: 1
10-FZ06NRA084FP02-P969F78
10-PZ06NRA084FP02-P969F78Y
Characteristic Values
Parameter
Symbol
Conditions
V
GE
[V] or
V
GS
[V]
V
r
[V] or
V
CE
[V] or
V
DS
[V]
I
C
[A] or
I
F
[A] or
I
D
[A]
T
j
Min
Value
Typ
Max
Unit
Buck MOSFET
Static drain to source ON resistance
Gate threshold voltage
Gate to Source Leakage Current
Zero Gate Voltage Drain Current
Turn On Delay Time
Rise Time
Turn off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Total gate charge
Gate to source charge
Gate to drain charge
Input capacitance
Output capacitance
R
ds(on)
V
(GS)th
I
gss
I
dss
t
d(ON)
t
r
t
d(OFF)
t
f
E
on
E
off
Q
g
Q
gs
Q
gd
C
iss
f=1MHz
C
oss
R
thJH
Thermal grease
thickness≤50um
λ
= 1 W/mK
0
100
C
Tj=25°
154
10
480
18,1
Tj=25°
C
Rgoff=4
Rgon=4
20
0
10
V
DS
=V
GS
0
600
16
0,00121
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
108
214
3
m
3,6
100
5
2,4
V
nA
uA
±15
350
40
36
37
3
3
399
414
3
4
0,06
0,28
0,06
0,23
ns
mWs
119
14
61
2660
pF
nC
Thermal resistance chip to heatsink per chip
** see schematic of the Gate-complex at characteristic figures
1,16
K/W
Boost IGBT
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off incl diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
V
GE(th)
V
CE(sat)
I
CES
I
GES
R
gint
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oss
C
rss
Q
Gate
Thermal grease
thickness≤50um
λ
= 1 W/mK
15
480
75
Tj=25°
C
f=1MHz
0
25
Tj=25°
C
Rgoff=4
Rgon=4
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
V
CE
=V
GE
15
0
20
600
0
0,0012
30
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
5
1,05
5,8
1,12
1,13
6,5
1,85
0,0038
600
V
V
mA
nA
none
85
87
11
13
177
209
78
102
0,39
0,66
1,56
2,18
ns
±15
350
50
mWs
4620
288
137
470
nC
pF
Thermal resistance chip to heatsink per chip
R
thJH
1,02
K/W
copyright Vincotech
5
Revision: 1
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