10-FZ06NRA041FS02-P965F68
10-PZ06NRA041FS02-P965F68Y
flowNPC 0
Features
●
neutral point clamped inverter
●
reactive power capability
●
low inductance layout
600V/30A
flow0 12mm housing
Target Applications
●
solar inverter
●
UPS
Schematic
Types
●
10-FZ06NRA041FS02-P965F68
●
10-PZ06NRA041FS02-P965F68Y
Maximum Ratings
Tj=25° unless otherwise specified
C,
Parameter
Symbol
Condition
Value
Unit
Boost Inv. Diode
Repetitive peak reverse voltage
Forward current per diode
Maximum repetitive forward current
I2t-value
Power dissipation per Diode
Maximum Junction Temperature
V
RRM
I
FAV
I
FRM
I
2
t
P
tot
T
j
max
DC current
Tjmax
t
p
=10ms
T
j
=T
j
max
T
j
=25°
C
T
h
=80°
C
C
T
c
=80°
T
h
=80°
C
T
c
=80°
C
600
17
17
20
9,5
44
61
175
V
A
A
A
2
s
W
°
C
Buck Diode
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
V
RRM
I
F
I
FRM
P
tot
T
j
max
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°
C
T
c
=80°
C
T
h
=80°
C
T
c
=80°
C
600
19
24
66
32
49
150
V
A
A
W
°
C
copyright
by
Vincotech
1
Revision: 1
10-FZ06NRA041FS02-P965F68
10-PZ06NRA041FS02-P965F68Y
Maximum Ratings
Tj=25° unless otherwise specified
C,
Parameter
Symbol
Condition
Value
Unit
Buck MOSFET
Drain to source breakdown voltage
DC drain current
Pulsed drain current
Power dissipation
Gate-source peak voltage
Maximum Junction Temperature
V
DS
I
D
I
D pulse
P
tot
V
GS
T
j
max
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°
C
T
c
=80°
C
Tc=25°
C
T
h
=80°
C
C
T
c
=80°
600
29
35
272
78
118
±20
150
V
A
A
W
V
°
C
Boost IGBT
Collector-emitter break down voltage
DC collector current
Pulsed collector current
Turn off safe operating area
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
P
tot
V
GE
t
SC
V
CC
T
j
max
T
j
≤150°
C
V
GE
=15V
V
CE
I
C
I
Cpuls
T
j
=T
j
max
t
p
limited by T
j
max
T
j
≤175°
C
V
CE
<=V
CES
T
h
=80°
C
T
c
=80°
C
T
h
=80°
C
T
c
=80°
C
600
58
77
225
225
93
141
±20
6
360
175
V
A
A
A
W
V
µs
V
C
°
Boost Diode
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak surge current
Power dissipation per Diode
Maximum Junction Temperature
V
RRM
I
F
I
FRM
P
tot
T
j
max
T
j
=T
j
max
20kHz Square Wave
T
j
=T
j
max
T
h
=80°
C
T
c
=80°
C
T
h
=80°
C
T
c
=80°
C
1200
17
23
36
33
50
150
V
A
A
W
°
C
Thermal Properties
Storage temperature
Operation temperature under switching condition
T
stg
T
op
-40…+125
-40…+(Tjmax - 25)
°
C
C
°
Insulation Properties
Insulation voltage
Creepage distance
Clearance
V
is
t=2s
DC voltage
4000
min 12,7
min 12,7
V
mm
mm
copyright
by
Vincotech
2
Revision: 1
10-FZ06NRA041FS02-P965F68
10-PZ06NRA041FS02-P965F68Y
Characteristic Values
Parameter
Symbol
Conditions
V
GE
[V] or
V
GS
[V]
V
r
[V] or
V
CE
[V] or
V
DS
[V]
I
C
[A] or
I
F
[A] or
I
D
[A]
T
j
Min
Value
Typ
Max
Unit
Boost Inv. Diode
Forward voltage
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
V
F
V
to
r
t
I
r
Thermal grease
thickness≤50um
λ
= 1 W/mK
600
10
10
10
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
1,25
1,88
1,22
1,37
0,70
0,04
0,04
1,95
V
V
0,027
mA
Thermal resistance chip to heatsink per chip
R
thJH
2,17
K/W
Buck Diode
Diode forward voltage
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
V
F
I
r
I
RRM
t
rr
Q
rr
di(rec)max
/dt
10
600
Rgon=8
10
350
20
Erec
Thermal grease
thickness≤50um
λ
= 1 W/mK
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
1,61
1,88
1,7
320
V
µA
A
ns
µC
A/µs
mWs
10
10
12
23
0,11
0,12
2333
1808
0,02
0,02
Thermal resistance chip to heatsink per chip
R
thJH
2,16
K/W
Buck MOSFET
Static drain to source ON resistance
Gate threshold voltage
Gate to Source Leakage Current
Zero Gate Voltage Drain Current
Turn On Delay Time
Rise Time
Turn off delay time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Total gate charge
Gate to source charge
Gate to drain charge
Input capacitance
Output capacitance
R
ds(on)
V
(GS)th
I
gss
I
dss
t
d(ON)
t
r
t
d(OFF)
E
on
E
off
Q
g
Q
gs
Q
gd
C
iss
f=1MHz
C
oss
R
thJH
Thermal grease
thickness≤50um
λ
= 1 W/mK
0
100
Tj=25°
C
360
10
480
44,4
Tj=25°
C
Rgoff=8
Rgon=8
10
350
20
V
DS
=V
GS
20
0
0
600
10
30
0,00296
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
41
82
3
m
3,6
100
5
2,4
V
nA
uA
34
32
11
12
270
293
0,13
0,15
0,07
0,07
ns
mWs
290
36
150
6530
pF
nC
Thermal resistance chip to heatsink per chip
0,90
K/W
copyright
by
Vincotech
3
Revision: 1
10-FZ06NRA041FS02-P965F68
10-PZ06NRA041FS02-P965F68Y
Characteristic Values
Parameter
Symbol
Conditions
V
GE
[V] or
V
GS
[V]
V
r
[V] or
V
CE
[V] or
V
DS
[V]
I
C
[A] or
I
F
[A] or
I
D
[A]
T
j
Min
Value
Typ
Max
Unit
Boost IGBT
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off incl diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
V
GE(th)
V
CE(sat)
I
CES
I
GES
R
gint
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oss
C
rss
Q
Gate
Thermal grease
thickness≤50um
λ
= 1 W/mK
15
480
75
Tj=25°
C
f=1MHz
0
25
Tj=25°
C
Rgoff=4
Rgon=4
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
V
CE
=V
GE
15
0
20
600
0
0,0012
30
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
5
1,05
5,8
1,22
1,29
6,5
1,85
0,0038
600
V
V
mA
nA
none
84
84
7
8
204
242
55
90
0,26
0,39
0,99
1,36
ns
±15
350
30
mWs
4620
288
137
470
nC
pF
Thermal resistance chip to heatsink per chip
R
thJH
1,02
K/W
Boost Diode
Diode forward voltage
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovery energy
V
F
I
r
I
RRM
t
rr
Q
rr
di(rec)max
/dt
18
600
Rgon=4
±15
350
30
E
rec
Thermal grease
thickness≤50um
λ
= 1 W/mK
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
2,23
2,04
3,3
100
V
µA
A
ns
µC
A/µs
mWs
59
67
21
102
2,53
4,72
9919
5374
0,75
1,45
Thermal resistance chip to heatsink per chip
R
thJH
2,11
K/W
Thermistor
Rated resistance
R
∆R/R
P
Tj=25°
C
Tj=25°
C
Tj=25°
C
Tj=25°
C
-4,5
21511
+4,5
210
4
3884
3964
F
%
mW
mW/K
K
K
Deviation of R25
Power dissipation
Power dissipation constant
B-value
B-value
Vincotech NTC Reference
B
(25/50)
B
(25/100)
Tj=25°
C
Tj=25°
C
copyright
by
Vincotech
4
Revision: 1
10-FZ06NRA041FS02-P965F68
10-PZ06NRA041FS02-P965F68Y
Buck
Figure 1
Typical output characteristics
I
C
= f(V
CE
)
90
I
C
(A)
I
C
(A)
MOSFET
Figure 2
Typical output characteristics
I
C
= f(V
CE
)
90
MOSFET
75
75
60
60
45
45
30
30
15
15
0
0
1
2
3
4
V
CE
(V)
5
0
0
1
2
3
4
V
CE
(V)
5
At
t
p
=
T
j
=
V
GE
from
250
µs
25
°C
0 V to 20 V in steps of 2 V
At
t
p
=
T
j
=
V
GE
from
250
µs
125
°C
0 V to 20 V in steps of 2 V
Figure 3
Typical transfer characteristics
I
C
= f(V
GE
)
50
I
C
(A)
MOSFET
Figure 4
Typical diode forward current as
a function of forward voltage
I
F
= f(V
F
)
50
I
F
(A)
FWD
40
40
T
j
= 25°
C
30
30
T
j
= T
jmax
-25°
C
20
20
10
10
T
j
= T
jmax
-25°
C
T
j
= 25°
C
0
0
1
2
3
4
5
V
GE
(V)
6
0
0
1
2
3
V
F
(V)
4
At
t
p
=
V
CE
=
250
10
µs
V
At
t
p
=
250
µs
copyright
by
Vincotech
5
Revision: 1
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