10-FZ062TA099FH-P980D18/-FH01-P980D28
datasheet
flow
PFC
0
Features
●
●
●
●
Vincotech clip-in housing
Compact and low inductance design
Suitable for Interleaved topology
Suitable for curent sensing in drain
600 V/ 2 x 99mOhm / 200 kHz
flow
0 housing
● CP series CoolMOS
TM
and SiC boost FRED
Target Applications
●
●
●
●
●
PFC
PFC
PFC
PFC
PFC
for
for
for
for
for
welding
SMPS
motor drives
UPS
battery charger
Schematic
FZ062TA099FH
FZ062TA099FH01
Types
● FZ062TA099FH; without SCR, current sense in drain
● FZ062TA099FH01; with SCR, current sense in drain
CoolMOS is a trademark of Infineon Technologies AG
Maximum Ratings
T
j
=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Input Rectifier Diode
Repetitive peak reverse voltage
DC forward current
Surge forward current
I2t-value
Power dissipation
Maximum Junction Temperature
V
RRM
I
F
I
FSM
t
p
=10ms
I
2
t
P
tot
T
jmax
T
j
=T
j
max
T
h
=80°C
T
j
=25°C
310
40
150
A
2
s
W
°C
T
j
=T
j
max
T
h
=80°C
1600
35
250
V
A
A
Input Rectifier Thyristor
Repetitive peak reverse voltage
DC forward current
Surge forward current
I2t-value
Power dissipation
Maximum Junction Temperature
V
RRM
I
F
I
FSM
t
p
=10ms
I
2
t
P
tot
T
jmax
T
j
=T
j
max
T
h
=80°C
T
j
=25°C
310
44
150
A
2
s
W
°C
T
j
=T
j
max
T
h
=80°C
800
34
250
V
A
A
PFC MOSFET
Drain to source voltage
DC drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
V
DS
I
D
I
Dpulse
E
AS
E
AR
I
AR
T
j
=T
j
max
t
p
limited by T
j
max
I
D
=11 A
V
DD
=50 V
I
D
=11A
V
DD
=50V
t
AR
limited by Tjmax
T
h
=80°C
600
16
93
800
1,2
11
V
A
A
mJ
mJ
A
t
p
limited by Tjmax
copyright Vincotech
1
10 Febr. 2015 / Revision 4
10-FZ062TA099FH-P980D18/-FH01-P980D28
datasheet
Maximum Ratings
T
j
=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
dv/dt ruggedness
Reverse diode dv/dt
Power dissipation
Gate-source peak voltage
Maximum Junction Temperature
dv /dt
dv /dt
P
tot
V
GS
T
jmax
V
DS
=0...480V
50
15
V/ns
V/ns
W
V
°C
T
j
=T
j
max
T
h
=80°C
62
+/- 20
150
C.T. Inverse diode
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation
Maximum Junction Temperature
V
RRM
I
F
I
FRM
P
tot
T
jmax
T
j
=25°C
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°C
T
h
=80°C
600
8
16
14
175
V
A
A
W
°C
PFC Diode
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation
Maximum Junction Temperature
V
RRM
I
F
I
FRM
P
tot
T
jmax
T
j
=25°C
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°C
T
h
=80°C
600
19
64
37
175
V
A
A
W
°C
PFC Shunt
DC forward current
Power dissipation
I
F
P
tot
T
c
=25°C
T
c
=25°C
31,6
10
A
W
DC link Capacitor
Max.DC voltage
V
MAX
T
c
=25°C
500
V
Thermal Properties
Storage temperature
Operation temperature under switching condition
T
stg
T
op
-40…+125
-40…+(Tjmax - 25)
°C
°C
Insulation Properties
Insulation voltage
Creepage distance
Clearance
V
is
t=2s
DC voltage
4000
min 12,7
9,42
V
mm
mm
copyright Vincotech
2
10 Febr. 2015 / Revision 4
10-FZ062TA099FH-P980D18/-FH01-P980D28
datasheet
Characteristic Values
Parameter
Symbol
Conditions
V
r
[V] or
I
C
[A] or
V
GE
[V] or
V
CE
[V] or
I
F
[A] or
V
GS
[V]
V
DS
[V]
I
D
[A]
Value
Unit
T
j
Min
Typ
Max
Input Rectifier Diode
Forward voltage
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
Thermal resistance chip to heatsink
V
F
V
to
r
t
I
r
R
th(j-s)
Thermal grease
thickness≤50um
λ =1 W/mK
30
30
30
1500
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=150°C
1,16
1,11
0,9
0,77
9
12
1,4
V
V
mΩ
0,02
2
1,72
mA
K/W
Input Rectifier Thyristor
Forward voltage
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
Gate controlled delay time
Gate controlled rise time
Critical rate of rise of off-state voltage
Critical rate of rise of on-state current
Circuit commutated turn-off time
Holding current
Latching current
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Gate non-trigger current
Thermal resistance chip to heatsink
V
F
V
to
r
t
I
r
t
GD
t
GR
(dv /dt )
cr
(di /dt )
cr
t
q
I
H
I
L
V
GT
I
GT
V
GD
I
GD
R
th(j-s)
Thermal grease
thickness≤50um
λ = 1 W/mK
30
30
30
800
Ig=0,5A
dig/dt=0,5A/us
Ig=0,2A
dig/dt=0,2A/us
VD=1/2Vdrm
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=25°C
1,25
1,22
0,93
0,82
0,011
0,014
1,6
V
V
mΩ
0,05
2
2
<1
500
150
150
50
90
1,3
1,6
28
50
0,2
1
mA
µs
µs
V/µs
A/µs
µs
mA
mA
V
mA
V
mA
K/W
VD=2/3Vdrm
Ig=0,2A
f=50Hz
VD=2/3Vdrm
tp=200us
VD=6V
tp=10us
Ig=0,2A
VD=6V
VD=6V
VD=1/2Vdrm
VD=1/2Vdrm
VD=2/3Vdrm
40
100
26
Tj=125°C
Tj=125°C
Tj=125°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=-40°C
Tj=25°C
Tj=-40°C
Tj=125°C
Tj=125°C
11
1,57
PFC MOSFET
Avalanche breakdown voltage
V
(BR)DS
0
10
Vds
20
0
0
600
0,0003
18
0,0012
Tj=25°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
600
111
223
3,0
V
mΩ
3,9
200
10
21
21
4
4
71
73
3
3
0,055
0,059
0,008
0,013
60
14
20
2800
f=1MHz
0
100
Tj=25°C
130
2,5
Thermal grease
thickness≤50um
λ = 1 W/mK
Static drain to source ON resistance
Gate threshold voltage
Gate to Source Leakage Current
Zero Gate Voltage Drain Current
Turn On Delay Time
Rise Time
Turn off delay time
Fall time
Turn-on energy loss
Turn-off energy loss
Total gate charge
Gate to source charge
Gate to drain charge
Input capacitance
Output capacitance
Reverse transfer capacitance
Thermal resistance chip to heatsink
r
DS(on)
V
(GS)th
I
GSS
I
DSS
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
Q
GE
Q
GS
Q
GD
C
iss
C
oss
C
rss
R
th(j-s)
Rgoff=4 Ω
Rgon=4 Ω
2,5
V
nA
uA
ns
10
400
15
mWs
0
400
18
nC
pF
1,13
K/W
copyright Vincotech
3
10 Febr. 2015 / Revision 4
10-FZ062TA099FH-P980D18/-FH01-P980D28
datasheet
Characteristic Values
Parameter
Symbol
Conditions
V
r
[V] or
I
C
[A] or
V
GE
[V] or
V
CE
[V] or
I
F
[A] or
V
GS
[V]
V
DS
[V]
I
D
[A]
Value
Unit
T
j
Min
Typ
Max
C.T. Inverse diode
Diode forward voltage
Thermal resistance chip to heatsink
V
F
R
th(j-s)
Thermal grease
thickness≤50um
λ = 1 W/mK
6
Tj=25°C
Tj=125°C
1,66
1,61
5,12
2
V
K/W
PFC Diode
Forward voltage
Reverse leakage current
Peak recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovered energy
Peak rate of fall of recovery current
Thermal resistance chip to heatsink
V
F
I
rm
I
RRM
t
rr
Q
rr
E
rec
(
di
rf
/dt )
max
16
600
Rgon=4 Ω
10
400
15
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1,53
1,68
1,8
400
V
µA
A
ns
µC
mWs
A/µs
K/W
24,4
21,9
8
8
0,11
0,09
0,02
0,02
9935
7532
2,56
R
th(j-s)
Thermal grease
thickness≤50um
λ = 1 W/mK
PFC Shunt
R1 value
Temperature coeficient
Internal heat resistance
Inductance
R
tc
R
thi
L
20°C to 60°C
9,4
10
< 50
< 6.5
<3
10,6
mΩ
ppm/K
K/W
nH
DC link Capacitor
C value
C
480
540
600
nF
Thermistor
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
B-value
Vincotech NTC Reference
B
(25/50)
B
(25/100)
R
Δ
R/R
P
R100=1486 Ω
25
100
25
25
25
25
-4,5
210
3,5
3884
3964
F
21,5
+4,5
kΩ
%
mW
mW/K
K
K
copyright Vincotech
4
10 Febr. 2015 / Revision 4
10-FZ062TA099FH-P980D18/-FH01-P980D28
datasheet
PFC Switch & C.T. Inverse Diode
Figure 1
Typical diode forward current as
a function of forward voltage
I
F
= f(V
F
)
20
I
F
(A)
Inverse diode
Figure 2
Diode transient thermal impedance
as a function of pulse width
Z
thJH
= f(t
p
)
10
1
Inverse diode
16
10
0
12
Z
thJC
(K/W)
8
10
-1
T
j
= T
jmax
-25°C
4
T
j
= 25°C
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0.000
0
0
1
1
2
2
3
V
F
(V)
3
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t
p
(s)
10 10
1
t
p
=
250
µs
D=
R
thJH
=
t
p
/
T
5,12
K/W
Figure 3
Power dissipation as a
function of heatsink temperature
P
tot
= f(T
h
)
P
tot
(W)
40
Inverse diode
Figure 4
Forward current as a
function of heatsink temperature
I
F
= f(T
h
)
12
I
F
(A)
Inverse diode
10
32
8
24
6
16
4
8
2
0
0
50
100
150
T
h
(
o
C)
200
0
0
50
100
150
T
h
(
o
C)
200
T
j
=
150
ºC
T
j
=
150
ºC
copyright Vincotech
5
10 Febr. 2015 / Revision 4
Microchip MCU
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