10-FY07ZAA015SM-L512B28
target datasheet
flow
RPI 1
Features
● High integration level of Rectifier, PFC and Inverter
● High-efficiency Input Rectifier
● Dual PFC with high efficiency, fast IGBT H5 +
ultra-fast Si Diode
● High efficiency H-Bridge inverter with fast IGBT H5
● Temperature sensor
650 V / 15 A
flow
1 12mm housing
Schematic
Target applications
● Welding
● Charger
Types
● 10-FY07ZAA015SM-L512B28
Maximum Ratings
T
j
=25°C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Rectifier Diode
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
Surge (non-repetitive) forward current
Surge current capability
Total power dissipation
Maximum Junction Temperature
V
RRM
I
F
I
FSM
I
t
P
tot
T
jmax
2
1600
T
j
=
T
jmax
50 Hz Single Half Sine Wave
t
p
= 10 ms 50 Hz sine
T
j
=
T
jmax
T
j
= 150°C
T
h
= 80°C
T
h
=
80°C
48
270
370
60
150
V
A
A
A s
W
°C
2
Copyright Vincotech
1
17 Aug. 2015 / Revision 1
10-FY07ZAA015SM-L512B28
target datasheet
Parameter
Symbol
Condition
Value
Unit
PFC Switch
Collector-emitter voltage
Collector current
Repetitive peak collector current
Turn off safe operating area
Total power dissipation
Gate-emitter voltage
Maximum Junction Temperature
P
tot
V
GES
T
jmax
V
CES
I
C
I
CRM
T
j
=
T
jmax
t
p
limited by
T
jmax
T
j
≤ 150°C,
V
CE
≤ 650 V
T
j
=
T
jmax
T
S
=80 °C
T
S
=80 °C
650
21
45
45
44
±20
175
V
A
A
A
W
V
°C
Parameter
Symbol
Conditions
Value
Unit
PFC Diode
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
Total power dissipation
Maximum Junction Temperature
V
RRM
I
F
P
tot
T
jmax
T
j
=T
jmax
T
j
=T
jmax
T
h
=80°C
T
h
=80°C
650
20
16
175
V
A
W
°C
Parameter
Symbol
Conditions
Value
Unit
C. T. Protection Diode
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation
Maximum Junction Temperature
V
RRM
I
F
I
FRM
P
tot
T
jmax
T
j
=T
j
max
T
h
=80°C
T
j
=T
j
max
T
h
=80°C
650
17
20
33
175
V
A
A
W
°C
Copyright Vincotech
2
17 Aug. 2015 / Revision 1
10-FY07ZAA015SM-L512B28
target datasheet
Parameter
Symbol
Condition
Value
Unit
H-Bridge Swithc Lo/Hi Side
Collector-emitter voltage
Collector current
Repetitive peak collector current
Turn off safe operating area
Total power dissipation
Gate-emitter voltage
Maximum Junction Temperature
P
tot
V
GES
T
jmax
V
CES
I
C
I
CRM
T
j
=
T
jmax
t
p
limited by
T
jmax
T
j
≤ 150°C,
V
CE
≤ 650 V
T
j
=
T
jmax
T
S
=80 °C
T
S
=80 °C
650
21
45
45
44
±20
175
V
A
A
A
W
V
°C
Parameter
Symbol
Conditions
Value
Unit
H-Bridge Diode Lo/Hi Side
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Maximum Junction Temperature
V
RRM
I
F
I
FRM
P
tot
T
jmax
T
j
=
T
jmax
T
h
= 80°C
T
j
=
T
jmax
T
h
=
80°C
650
14
20
29
175
V
A
A
W
°C
Copyright Vincotech
3
17 Aug. 2015 / Revision 1
10-FY07ZAA015SM-L512B28
target datasheet
Parameter
Symbol
Conditions
Value
Unit
DC Capacitor
Maximum DC voltage
Operation Temperature
V
MAX
T
op
630
-55…+125
V
°C
Parameter
Symbol
Conditions
Value
Unit
Module Properties
Thermal Properties
Storage temperature
Operation Junction Temperature
T
stg
T
jop
-40…+125
-40…+(T
jmax
- 25)
°C
°C
Isolation Properties
Isolation voltage
Creepage distance
Clearance
Comparative Tracking Index
CTI
V
isol
DC voltage
t
p
=2s
4000
min 12,7
7,74
>200
V
mm
mm
Copyright Vincotech
4
17 Aug. 2015 / Revision 1
10-FY07ZAA015SM-L512B28
target datasheet
Characteristic Values
Rectifier Diode
Parameter
Symbol
Conditions
V
r
[V]
I
F
[A]
T
j
[°C]
Min
Value
Typ
Max
Unit
Static
25
Forward voltage
V
F
13
125
150
Reverse leakage c urrent
I
r
1600
25
150
50
1100
µA
0,99
0,9
1,21
V
Thermal
Thermal resistance junc tion to sink
R
th(j-s)
phase-c hange
material
ʎ
=3,4W/mK
1,16
K/W
PFC Switch
Parameter
Symbol
Conditions
V
GE
[V]
V
CE
[V]
I
C
[A]
T
j
[ °C]
Value
Unit
Min
Typ
Max
Static
Gate-emitter threshold voltage
V
GE(th)
V
GE
=V
CE
0,0004
25
125
25
Collec tor-emitter saturation voltage
V
CEsat
15
15
125
150
Collec tor-emitter c ut-off current
Gate-emitter leakage c urrent
Internal gate resistance
Input capacitance
Output capacitance
Reverse transfer capac itance
Gate c harge
I
CES
I
GES
r
g
C
ies
C
oes
C
res
Q
g
15
520
15
25
f=1MHz
0
25
25
0
20
650
0
25
125
25
125
none
930
24
4
38
nC
pF
120
1,64
1,77
1,80
40
µA
nA
2,22
V
3,3
4
4,7
V
Thermal
Thermal resistance junc tion to sink
R
th(j-s)
phase-change
material
ʎ
=3,4W /mK
2,14
K/W
Copyright Vincotech
5
17 Aug. 2015 / Revision 1
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