10-FY07BIA050SM-M523E38
10-PY07BIA050SM-M523E38Y
target datasheet
flow
SOL 1 BI
Features
Booster:
● Dual boost topology
● Ultra High-Speed IGBT and Diode
● High efficiency bypass rectifier
Inverter:
● Split Output H-Bridge topology
● High-Speed IGBT and Diode
● Integrated DC capacitors
● Temperature sensor
650 V / 50 A
flow
1 12mm housing
Schematic
Target applications
● Power Supply
● Solar
● Welding
Types
● 10-FY07BIA050SM-M523E38
● 10-PY07BIA050SM-M523E38Y
Maximum Ratings
T
j
=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
In. Boost Switch\H-Bridge Switch
Collector-emitter voltage
Collector current
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
Maximum Junction Temperature
V
CES
I
C
I
CRM
P
tot
V
GES
T
jmax
T
j
=
T
jmax
t
p
limited by
T
jmax
T
j
=
T
jmax
T
S
=80 °C
T
S
=80 °C
650
43
150
84
±20
175
V
A
A
W
V
°C
Copyright Vincotech
1
19 Okt. 2015 / Revision 1
10-FY07BIA050SM-M523E38
10-PY07BIA050SM-M523E38Y
target datasheet
Parameter
Symbol
Conditions
Value
Unit
In. Boost Diode
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
Repetitive peak forward current
Power dissipation
Maximum Junction Temperature
V
RRM
I
F
I
FRM
P
tot
T
jmax
T
j
=T
jmax
T
S
=80°C
T
j
=T
jmax
T
S
=80°C
650
33
90
62
175
V
A
A
W
°C
Parameter
Symbol
Conditions
Value
Unit
In. Boost Inverse Diode
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Maximum Junction Temperature
V
RRM
I
F
I
FRM
P
tot
T
jmax
T
j
=
T
jmax
T
s
= 80°C
T
j
=
T
jmax
T
s
=
80°C
650
17
20
33
175
V
A
A
W
°C
Parameter
Symbol
Conditions
Value
Unit
Bypass Diode
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
Surge (non-repetitive) forward current
Surge current capability
Total power dissipation
Maximum Junction Temperature
V
RRM
I
F
I
FSM
I
t
P
tot
T
jmax
2
1600
T
j
=
T
jmax
50 Hz Single Half Sine Wave
T
j
= 150°C
t
p
= 10 ms
T
j
=
T
jmax
T
h
= 80°C
370
60
150
T
h
=
80°C
48
270
V
A
A
A s
W
°C
2
Copyright Vincotech
2
19 Okt. 2015 / Revision 1
10-FY07BIA050SM-M523E38
10-PY07BIA050SM-M523E38Y
target datasheet
Parameter
Symbol
Conditions
Value
Unit
H-Bridge Diode
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Maximum Junction Temperature
V
RRM
I
F
I
FRM
P
tot
T
jmax
T
j
=
T
jmax
T
s
= 80°C
T
j
=
T
jmax
T
s
=
80°C
650
38
60
52
175
V
A
A
W
°C
DC Link Capacitance
Parameter
Symbol
Conditions
Value
Unit
Maximum DC voltage
Operation Temperature
V
MAX
T
op
630
-55…+125
V
°C
Module Properties
Parameter
Symbol
Conditions
Value
Unit
Thermal Properties
Storage temperature
Operation Junction Temperature
T
stg
T
jop
-40…+125
-40…+(T
jmax
- 25)
°C
°C
Isolation Properties
Isolation voltage
Creepage distance
Clearance
Comparative Tracking Index
CTI
V
isol
DC voltage
t
p
=2s
4000
min 12,7
min 12,7
>200
V
mm
mm
Copyright Vincotech
3
19 Okt. 2015 / Revision 1
10-FY07BIA050SM-M523E38
10-PY07BIA050SM-M523E38Y
target datasheet
Characteristic Values
In. Boost Switch\H-Bridge Switch
Parameter
Symbol
Conditions
V
GE
[V]
V
CE
[V]
I
C
[A]
T
j
[ °C]
Value
Unit
Min
Typ
Max
Static
Gate-emitter threshold voltage
V
GE(th)
V
GE
=V
CE
0,0005
25
125
25
Collec tor-emitter saturation voltage
V
CEsat
15
50
125
150
Collec tor-emitter c ut-off current
Gate-emitter leakage c urrent
Internal gate resistance
Input capacitance
Output capacitance
Reverse transfer capac itance
Gate c harge
I
CES
I
GES
r
g
C
ies
C
oes
C
res
Q
g
15
520
50
25
f=1 MHz
0
25
25
0
20
650
0
25
125
25
125
none
3000
50
11
120
nC
pF
120
40
µA
nA
1
1,82
2,00
2,22
V
3,3
4
4,7
V
Thermal
Thermal resistance junc tion to sink
R
th(j-s)
phase-change
material
ʎ
=3,4W /mK
1,13
K/W
In. Boost Diode
Parameter
Symbol
Conditions
V
r
[V]
I
F
[A]
T
j
[°C]
Min
Value
Typ
Max
Unit
Static
25
Forward voltage
V
F
30
125
150
Reverse leakage c urrent
I
r
665
25
150
10
µA
2,46
2,03
2,6
V
Thermal
Thermal resistance junc tion to sink
R
th(j-s)
phase-c hange
material
ʎ
=3,4W/mK
1,54
K/W
Copyright Vincotech
4
19 Okt. 2015 / Revision 1
10-FY07BIA050SM-M523E38
10-PY07BIA050SM-M523E38Y
target datasheet
In. Boost Inverse Diode
Parameter
Symbol
Conditions
V
r
[V]
I
F
[A]
T
j
[°C]
Min
Value
Typ
Max
Unit
Static
25
Forward voltage
V
F
10
125
150
Reverse leakage current
I
r
650
25
150
0,14
µA
1,67
1,56
1,87
V
Thermal
Thermal resistance junction to sink
R
th(j-s)
phase-change
material
ʎ
=3,4W/mK
2,87
K/W
Bypass Diode
Parameter
Symbol
Conditions
V
r
[V]
I
F
[A]
T
j
[°C]
Min
Value
Typ
Max
Unit
Static
25
Forward voltage
V
F
35
125
150
Reverse leakage current
I
r
1600
25
150
50
1100
µA
1,17
1,1
1,21
V
Thermal
Thermal resistanc e junction to sink
R
th(j-s)
phase-c hange
material
ʎ
=3,4W/mK
1,16
K/W
H-Bridge Diode
Parameter
Symbol
Conditions
V
r
[V]
I
F
[A]
T
j
[°C]
Min
Value
Typ
Max
Unit
Static
25
Forward voltage
V
F
30
125
150
Reverse leakage current
I
r
650
25
150
1,6
µA
1,35
1,7
V
Thermal
Thermal resistance junction to sink
R
th(j-s)
phase-change
material
ʎ
=3,4W/mK
1,82
K/W
Copyright Vincotech
5
19 Okt. 2015 / Revision 1
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