PAM8009
3W STEREO CLASS-D Audio Amplifier and Class AB
Headphone Driver (DC VOLUME, UVP and AGC Function)
Description
The PAM8009 is a 3W, Class D audio-power amplifier for driving
bridged-tied stereo speakers. Advanced DC volume control minimizes
external components and allows BTL (Speaker) volume control and
SE (Headphone) volume control, the gain range is from +20dB
(Volume=5V) to -60dB (Volume=0V) with 64 steps precise control.
Integrated power-limit technology suppresses the output signal
clip automatically due to the over level input signal. This technology
also offers low THD+N and protects speaker.
Integrated Undervoltage Protection (UVP) technology, external
undervoltage detection can be used to shut down the PAM8009 before
an input device can generate a pop.
PAM8009 is available in SO-24 and U-QFN4040-20.
Pin Assignments
ADVANCED INFORMATION
PAM8009
XXXYWWLL
Features
•
•
•
•
•
•
Operating Voltage: 2.8v ~ 5.5v
Filter – Free and Low EMI
Low Quiescent Current
IDD=7mA @ VDD= 5V
64 Steps DC Volume Control from -80dB to +20dB by DC Voltage
with Hysteresis
Power Limit Function
Disable: 0.45VDD ~ VDD
Max. Power: GND
•
•
UVP Function
Disable: Floating
Output Power @ THD+N=1%
BTL Mode
VDD=5V, Rl=4Ω; Po=2.4W
VDD=5V, Rl=8Ω; Po=1.4W
SE Mode
VDD=5V, Rl=32Ω; Po=60mW
•
Output Power @ THD+N = 10%
BTL Mode
VDD=5V, Rl=4Ω; Po=3.0W
VDD=5V, Rl=8Ω; Po=1.7W
•
•
•
•
•
•
Input Signal and Headphone Output Signal in Phase
Thermal and Over-Current Protections with Auto-Recovery
Power Enhance Package SO-24 and U-QFN4040-20
Lead Free and Green Devices Available (RoHS Compliant)
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green Device (Note 3)
ROUTN 1
HP_ROUT 2
SD 3
BYPASS 4
RINN 5
P8009
XXXYW
15 LOUTN
14 HP_LOUT
13 VDD
12 UVP
11 AGC
Applications
•
•
•
•
LCD Monitor / Projects
Projects / All-In-One Computers
Portable Speakers
Portable DVD Player / Game Machines
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-
free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total
Br + Cl) and <1000ppm antimony compounds.
PAM8009
Document number: DS37224 Rev. 1 - 2
1 of 12
www.diodes.com
January 2015
© Diodes Incorporated
PAM8009
Typical Applications Circuit
ADVANCED INFORMATION
Pin Descriptions
SO-24
1
2
3
4, 5, 20, 21
6
7
8
9
10
11
12, 18, 23
13
14, 16
15
17
19
22
24
Package Name
QFN-20
3
4
5
6, 18
7
8
9
10
11
12
13,16,20
14
-
2
15
17
19
1
Name
/SD
Bypass
RIN
GND
LIN
VOLUME
MUTE
SE/ BTL
AGC
UVP
VDD
HP_LOUT
N.C
HP_ROUT
LOUTN
LOUTP
ROUTP
ROUTN
Bias Voltage for Power Amplifier
Negative Input of Right Channel Power Amplifier
Ground Connection
Negative Input of Left Channel Power Amplifier
Internal Gain Setting Input
Connect to VDD which Set Max. Gain = +20dB
Mute Control Signal Input (Active High)
Output Mode Control Input
High for SE Mode and Low for BTL Mode
VDD ~ 0.45 x VDD or Floating, Disable the Function
Under Voltage Protection Input
Floating or Pull High Disable the Function
Power
Headphone Output of Left Channel Power Amplifier
No Connection
Headphone Output of Right Channel Power Amplifier
Negative Output of Left Channel Power Amplifier
Positive Output of Left Channel Power Amplifier
Positive Output of Right Channel Power Amplifier
Negative Output of Left Channel Power Amplifier
Function
Full Chip Shutdown Control Input (Active Low)
PAM8009
Document number: DS37224 Rev. 1 - 2
2 of 12
www.diodes.com
January 2015
© Diodes Incorporated
PAM8009
Functional Block Diagram
ADVANCED INFORMATION
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.) (Note 4)
Symbol
V
DD
V
DD
T
J
T
STG
T
SDR
Notes:
Parameter
Supply Voltage
Input Voltage
Maximum Junction Temperature
Storage Temperature Range
Maximum Soldering Temperature Range, 5 Seconds
Rating
-0.3 to 6.0
-0.3 to V
DD
+ 0.3
+150
- 65 to +150
+300
Unit
V
°C
4. Stresses greater than the 'Absolute Maximum Ratings' specified above may cause permanent damage to the device. These are stress ratings only;
functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may be
affected by exposure to absolute maximum rating conditions for extended periods of time.
Recommended Operating Conditions
(@T
A
= +25°C, unless otherwise specified.)
Symbol
V
DD
V
IH
V
IL
V
ICM
T
A
T
J
High Level Threshold Voltage
Low Level Threshold Voltage
Common Mode Input Voltage
Ambient Operation Temperature Range
Junction Temperature Range
Parameter
Supply Voltage Range
SD, MUTE
SE, BTL
SD, MUTE
SE, BTL
Max
2.8 ~ 5.5
2 ~ V
DD
0.8 x V
DD
~ V
DD
0 ~ 0.8
0 ~ 1.0
1 ~ V
DD
- 1
-40 ~ + 85
-40 + 125
Unit
V
V
V
V
V
V
°C
Thermal Information
(@T
A
= +25°C, unless otherwise specified.)
Symbol
θ
JA
Parameter
Thermal Resistance – Junction to Ambient
SO-24
QFN4040-20
Ambient Operation Temperature Range
SO-24
QFN4040-20
3 of 12
www.diodes.com
Typical Value
+96
+45
+18
+7
Unit
°C/W
θ
JC
°C/W
January 2015
© Diodes Incorporated
PAM8009
Document number: DS37224 Rev. 1 - 2
PAM8009
Electrical Characteristics
(@T
A
= +25°C, V
DD
= 5V, Gain = Max., R
L
=8Ω, unless otherwise specified.)
Symbol
BTL Mode
Parameter
Conditions
Min
Typ
Max
Units
ADVANCED INFORMATION
VDD
I
Q
I
Q
I
MUTE
I
MUTE
I
SD
F
OSC
Ri
Ri
V
OS
Supply Voltage Range
Quiescent Current (BTL)
Quiescent Current (SE)
Mute Current (BTL)
Mute Current (SE)
Shutdown Current
Oscillator Frequency
Input Resistance (BTL)
Input Resistance (SE)
Output Offset Voltage
R
DS(on)
Drain – Source on-State
Resistance
T
START UP
Po
THD+N
PSRR
CS
η
V
N
SNR
SE Mode
Vos
Po
THD+N
PSRR
CS
Vn
SNR
Startup time from Shutdown
Output Power
Total Harmonic Distortion Plus
Noise
Power Supply Ripple Rejection
Channel Separation
Efficiency
Noise
Signal Noise Ratio
-
V
MUTE
=0, V
SD
=5V, No Load
V
MUTE
=0, V
SD
=5V, No Load
V
MUTE
=0, V
SD
=5V, No Load
V
MUTE
=0, V
SD
=5V, No Load
V
MUTE
=0, V
SD
=0V, No Load
-
Gain=20dB
Gain=3.5dB
No load
VDD=5.5V, Ids=0.8A
P MOSFET
VDD=5.5V, Ids=0.8A
N MOSFET
VDD=4.5V, Ids=0.6A
P MOSFET
VDD=4.5V, Ids=0.6A
N MOSFET
VDD=3.6V, Ids=0.4A
P MOSFET
VDD=3.6V, Ids=0.4A
N MOSFET
Bypass Capacitor, Cb=2.2uF
THD+N=10%, f=1KHz, Rl=8Ω
THD+N=10%, f=1KHz, Rl=4Ω
Rl=8Ω, Po=0.8W, f=1KHz
Rl=4Ω, Po=1.6W, f=1KHz
Input AC-GND, f=1KHz, V
pp
=200mV
Po=1W, f=1KHz
Po=1.7W, f=1KHz, Rl=8Ω
Po=3W, f=1KHz, Rl=4Ω
Input AC-GND, A-weighting
Non A-weighting
F=20 ~ 20KHz, THD=1%
2.8
-
-
-
-
-
200
-
-
-
-
-
-
-
-
-
-
1.5
2.8
-
-
-
-
85
80
-
-
-
-
7
4
3
4
-
250
-
-
10
0.26
0.19
0.28
0.21
0.29
0.21
1.72
1.7
3.0
0.08
0.08
- 61
-82
90
88
180
270
83
5.5
-
-
-
-
1
300
33
56
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
mA
mA
mA
mA
µA
KHz
KΩ
KΩ
mV
Ω
S
W
%
dB
dB
%
uV
uV
dB
Output Offset Voltage
Output Power
Total Harmonic Distortion Plus
Noise
Power Supply Ripple Rejection
Channel Separation
Noise
Signal Noise Ratio
No load
THD+N=1%, Rl=32Ω, f=1KHz
Rl=32Ω, Po=50mW, f=1KHz
Input AC-GND,F=1KHz,Vpp=200mV
Po=1W, f=1KHz
Input AC-GND, A-weighting
Non A-weighting
F=20 ~ 20KHz, THD=1%
-
-
-
-
-
-
-
-
2.5
60
0.02
75
-87
74
58
89
-
-
-
-
-
-
-
-
V
mW
%
dB
dB
uV
uV
dB
Control Section
V
IH
V
IL
V
MH
V
ML
OTP
OTH
/SD Input High
/SD Input Low
Mute Input High
Mute Input Low
Over Temperature Protection
Over Temperature Hysteresis
-
-
-
-
-
-
1.4
-
1.4
-
-
-
-
-
-
-
150
108
-
0.6
-
0.6
-
-
V
V
V
V
°C
°C
PAM8009
Document number: DS37224 Rev. 1 - 2
4 of 12
www.diodes.com
January 2015
© Diodes Incorporated
PAM8009
Typical Performance Characteristics
THD+N vs. Output Power
50
ADVANCED INFORMATION
V
DD
=5v
R
L
=8Ω+33uH
THD+N≦10%
Av=20dB
AUX-0025
AES-17(20KHz)
F=100Hz /
1KHz
/
10KHz
20
10
5
2
%
1
0.5
V
DD
=5v
R
L
=4Ω+33uH
THD+N≦10%
Av=20dB
AUX-0025
AES-17(20KHz)
F=100Hz /
1KHz
/
10KHz
0.2
0.1
0.04
1m
2m
5m
10m
20m
50m
W
100m
200m
500m
1
2
5
THD+N vs. Frequency
10
10
5
2
V
DD
=5v
R
L
=8Ω
Av=20dB
AUX-0025
AES-17(20KHz)
Po=0.3W /
0.5W
/
0.8W
5
2
V
DD
=5v
R
L
=4Ω
Av=20dB
AUX-0025
AES-17(20KHz)
Po=0.5W /
1W
/
1.5W
1
1
%
0.5
%
0.5
0.2
0.2
0.1
0.1
0.05
0.06
0.03
20
50
100
200
500
Hz
1k
2k
5k
10k
20k
20
50
100
200
500
Hz
1k
2k
5k
10k
20k
Crosstalk vs. Frequency
+0
-10
-15
-20
-25
-30
-35
-40
-45
d
B
-50
-55
-60
-65
-70
-75
-80
-85
-90
-95
-100
20
50
100
200
-5
T
T
T
T
T
T
T
T
T
T
T
+0
-10
-15
-20
-25
-30
-35
-40
-45
d
B
-50
-55
-60
V
DD
=5v
Vo=1Vrms
R
L
=8Ω
Av=20dB
AUX-0025
AES-17(20KHz)
-5
T
T T
T T
T T
T T
T
V
DD
=5v
Vo=1Vrms
R
L
=4Ω
Av=20dB
AUX-0025
AES-17(20KHz)
R-Channel to L-Channel
R-Channel to L-Channel
-65
-70
-75
-80
R-Channel to L-Channel
500
Hz
1k
2k
5k
10k
20k
-85
-90
-95
-100
20
50
100
200
500
Hz
R-Channel to L-Channel
1k
2k
5k
10k
20k
PAM8009
Document number: DS37224 Rev. 1 - 2
5 of 12
www.diodes.com
January 2015
© Diodes Incorporated
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