A Product Line of
Diodes Incorporated
PAM8008
3W STEREO CLASS-D with DC VOLUME,
POWER LIMIT and ANTI-SATURATION
Description
The PAM8008 is a 3W, Class-D audio amplifier. Advanced 64-step
DC volume control minimizes external components and allows
speaker volume control.
Integrated power limit technology which suppress the output signal
clip automatically due to the over level input signal. It offers low
THD+N and protect speaker.
Integrated anti-saturation technology which suppress the output
signal clip automatically when supply voltage changes. It offers low
THD+N, to produce high-quality sound reproduction.
PAM8008 has an additional noise reduction circuit which achieves
6dB noise attenuation. This circuit may help eliminate external
filtering, thereby saving the board space and components cost.
The PAM8008 features SCP (short circuit protection), OTP and
thermal shutdown.
The PAM8008 is available in SOP-16L package.
Pin Assignments
Applications
•
•
•
•
LCD Monitors / TV Projectors
Notebook/All-In-One Computers
Portable Speakers
Portable DVD Players, Game Machines
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
3W Output at 10% THD with a 4 Load and 5V Power Supply
2.4W Output at 1% THD with a 4 Load and 5V Power Supply
Filterless, Low Quiescent Current and Low EMI
Low THD+N
Power Limit Function to Protect Speaker when Occuring Large
Input
64-Step DC Volume Control from -80dB to +20dB
6dB Effective Noise Reduction
Superior Low Noise: 60µV
Minimize Pop/Clip Noise
High Efficiency Up to 90%
Auto Recovery Short Circuit Protection
Thermal Shutdown
Pb-Free Package
PAM8008
Document number: DSxxxxx Rev. 1 - 0
1 of 14
www.diodes.com
October 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
PAM8008
Typical Applications Circuit
Pin Descriptions
Pin
Number
1
2
3
4
5, 12, 13
6
7
8
9
10, 15
11
14
16
Pin
Name
SD
BYPASS
RINN
PL
GND
LINN
VOLUME
MUTE
LOUTP
VDD
LOUTN
ROUTN
ROUTP
Function
Full Chip ShutdownControl Input (active low).
Bias Voltage for Power Amplifiers.
Negative Input of Right Channel Power Amplifier.
Connect PL to GND for Power Limit Setting.
Ground Connection.
Negative Input of Left Channel Power Amplifier.
DC Volume Control to Set the Gain of Class-D.
Mute Control Input (active high).
Positive Output of Left Channel Power Amplifier.
Power Supply.
Negative Output of Lef t Channel Power Amplifier.
Negative Output of Right Channel Power Amplifier.
Positive Output of Right Channel Power Amplifier.
PAM8008
Document number: DSxxxxx Rev. 1 - 0
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October 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
PAM8008
Functional Block Diagram
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
These are stress ratings only and functional operation is not implied. Exposure to absolute maximum ratings for prolonged time periods may
affect device reliability. All voltages are with respect to ground.
Parameter
Supply Voltage
Input Voltage
Operational Junction Temperature
Storage Temperature
Soldering Temperature
Rating
6.0
-0.3 to V
DD
+0.3
-40 to +125
-65 to +150
300, 5 sec
Unit
V
°C
Recommended Operating Conditions
(@T
A
= +25°C, unless otherwise specified.)
Parameter
Supply Voltage Range
Ambient OperationTemperature Range
Junction Temperature Range
Rating
2.5 to 5.5
-20 to +85
-20 to +125
Unit
V
°C
Thermal Information
Parameter
Thermal Resistance (Junction to Ambient)
Thermal Resistance (Junction to Case)
Package
SOP-16L
SOP-16L
Symbol
θ
JA
θ
JC
Max
110
23
Unit
°C/W
PAM8008
Document number: DSxxxxx Rev. 1 - 0
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October 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
PAM8008
Electrical Characteristics
(@T
A
= +25°C, V
DD
= 5V, Gain = Maximum, R
L
= 8Ω, unless otherwise specified.)
Parameter
Supply Voltage Range
Quiescent Current
Output Offset Voltage
Drain-Source On-State Resistance
Output Power
Total Harmonic Distortion Plus Noise
Power Supply Ripple Rejection
Channel Separation
Oscillator Frequency
Efficiency
Noise
Signal Noise Ratio
Turn-On Time
Mute Current
Shutdown Current
Logic Input High
Logic Input Low
Over Temperature Protection
Over Temperature Hysteresis
Symbol
V
DD
I
Q
V
OS
R
DS(ON)
P
O
THD+N
PSRR
CS
f
OSC
η
V
N
SNR
T
ON
I
MUTE
I
SD
V
IH
V
IL
OTP
OTH
P
O
= 1.1W, f =1 kHz, R
L
= 8Ω
P
O
= 2.4W, f =1 kHz, R
L
= 4Ω
A-Weighting
Input AC-GND
No A-Weighting
f = 20 - 20kHz, THD = 1%
V
DD
= 5V, C
BYP
= 1µF
MUTE = V
DD
V
SD
= 0V
1.4
0.6
150
40
No Load
No Load
I
DS
= 0.5A
THD+N = 1%
f = 1kHz
P MOSFET
N MOSFET
R
L
= 8Ω
R
L
= 4Ω
Test Conditions
Min
2.5
8
10
0.31
0.21
1.4
2.4
0.08
0.08
70
-95
200
250
87
83
60
80
95
1.2
4
10
1
300
Typ
Max
5.5
Units
V
mA
mV
Ω
W
%
dB
dB
kHz
%
%
µV
dB
S
mA
µA
V
°C
°C
R
L
= 8Ω, P
O
= 0.85W, f = 1KHz
R
L
= 4Ω, P
O
= 1.75, f = 1KHz
Input AC-GND, f = 1KHz, V
PP
= 200mV
P
O
= 1W, f = 1KHz
PAM8008
Document number: DSxxxxx Rev. 1 - 0
4 of 14
www.diodes.com
October 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
PAM8008
Typical Performance Characteristics
(@T
A
= +25°C, V
DD
= 5V, G
V
= 20dB, R
L
= 8Ω, unless otherwise specified.)
PAM8008
Document number: DSxxxxx Rev. 1 - 0
5 of 14
www.diodes.com
October 2012
© Diodes Incorporated
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