A Product Line of
Diodes Incorporated
PAM8406
ALTERNATIVE 5W STEREO AUDIO AMPLIFIER
Description
The PAM8406 is a 5W audio amplifier with an alternative option
between Class-D and Class-AB output which makes PAM8406 very
ideally for the applications efficiency-EMI compatible.
PAM8406 offers low THD+N, high SNR allowing it to achieve high-
quality sound reproduction. The fully differential output wi th new filter
less architecture (Class-D Mode) allows the device to drive the
speaker directly, requiring no low-pass output filters and DC blocking
capacitors, thus to save the system cost and PCB area.
The efficiency of the PAM8406 is up to 90%. It can extend the battery
life, ideally for portable applications. The PAM8406 is fully protected
against faults with short circuit protection and thermal protection.
The PAM8406 is available in SOP-16L/SOP-16(EP) package.
Pin Assignments
Features
Alternative Output: Class-D or Class-AB
5W Output at 10% THD with a 2Ω Load and 5V Power Supply
at Class-D Mode
3W Output at 10% THD with a 4Ω Load and 5V Power Supply
Filterless, Low Quiescent Current and No EMI
Low THD+N at Fully Output Range
Superior Low Noise
Efficiency up to 90% with Class-D Mode
No Pop At Turn-on/off
Fully Short Circuit Protection With Auto Recovery
Thermal Shutdown
Few External Components to Save the Space and Cost
SOP-16L/SOP-16(EP) Package
Applications
LCD TVs
Mutimedia Speakers
AM/FM System
DABs
Typical Applications Circuit
PAM8406
Document number: DSxxxxx Rev. 1 - 0
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www.diodes.com
March 2013
© Diodes Incorporated
A Product Line of
Diodes Incorporated
PAM8406
Pin Descriptions
Pin
Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Pin
Name
+OUT_L
PGNDL
-OUT_L
PVDDL
MUTE
VDD
INL
VREF
MODE
INR
GND
SHND
PVDDR
-OUT_R
PGNDR
+OUT_R
Function
Left Channel Positive Output
Power GND
Left Channel Negative Output
Power VDD
Mute Control Input (active low)
Analog VDD
Left Channel Input
Internal analog reference, connect a bypass capacitor from VREF to GND.
High: Class-D; Low: Class-AB
Right Channel Input
Analog GND
Shutdown Control Input (active low)
Power VDD
Right Channel Negative Output
Power GND
Right Channel Positive Output
Functional Block Diagram
PAM8406
Document number: DSxxxxx Rev. 1 - 0
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March 2013
© Diodes Incorporated
A Product Line of
Diodes Incorporated
PAM8406
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
These are stress ratings only and functional operation is not implied. Exposure to absolute maximum ratings for prolonged time periods may
affect device reliability. All voltages are with respect to ground.
Parameter
Supply Voltage
Input Voltage
Operation Temperature Range
Maximum Junction Temperature
Operation Junction Temperature
Storage Temperature
Soldering Temperature
Rating
6.0
-0.3 to V
DD
+0.3V
-40 to +85
150
-40 to +125
-65 to +150
300, 5 sec
Unit
V
°C
Recommended Operating Conditions
(@T
A
= +25°C, unless otherwise specified.)
Parameter
Supply Voltage Range
Operation Temperature Range
Junction Temperature Range
Rating
2.5 to 5.5
-40 to +85
-40 to +125
Unit
V
°C
°C
Thermal Information
Parameter
Thermal Resistance (Junction to Ambient)
Thermal Resistance (Junction to Case)
Package
SOP-16
SOP-16
Symbol
θ
JA
θ
JC
Max
110
23
Unit
°C/W
PAM8406
Document number: DSxxxxx Rev. 1 - 0
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March 2013
© Diodes Incorporated
A Product Line of
Diodes Incorporated
PAM8406
Electrical Characteristics
(@T
A
= +25°C, V
DD
= 5V, Gain = 24dB, R
L
= 8Ω, both Class-AB and D mode, unless otherwise specified.)
Symbol
V
DD
Parameter
Supply Voltage
Test Conditions
V
DD
= 5.0V
V
DD
= 3.6V
V
DD
= 2.5V
V
DD
= 5.0V
V
DD
= 3.6V
V
DD
= 2.5V
V
DD
= 5.0V
THD+N = 10%, f = 1KHz, R
L
= 4Ω
V
DD
= 3.6V
V
DD
= 2.5V
V
DD
= 5.0V
THD+N = 1%, f = 1KHz, R
L
= 4Ω
V
DD
= 3.6V
V
DD
= 2.5V
V
DD
= 5.0V
THD+N = 10%, f = 1KHz, R
L
= 8Ω
V
DD
= 3.6V
V
DD
= 2.5V
V
DD
= 5.0V
THD+N = 1%, f = 1KHz, R
L
= 8Ω
V
DD
= 5.0V, P
O
= 0.1W to 1W , R
L
= 8Ω
V
DD
= 3.6V, P
O
= 0.05W to 0.5W, R
L
= 8Ω
V
DD
= 5.0V, P
O
= 0.1W to 2W, R
L
= 4Ω
V
DD
= 3.6V
V
DD
= 2.5V
f = 1kHz
f = 1kHz
Min
2.5
Typ
5.0
2.6
1.3
4.0
2.0
1.0
3.14
1.5
0.76
2.55
1.45
0.63
1.8
0.92
0.44
1.6
0.76
0.36
0.15
0.11
0.15
0.11
0.15
Max
5.5
Units
V
W
THD+N = 10%, f = 1KHz, R
L
= 2Ω
(Class-D)
THD+N = 1%, f = 1KHz, R
L
= 2Ω
(Class-D)
W
W
P
O
Output Power
W
W
W
%
%
THD+N
Total Harmonic
Distortion Plus Noise
V
DD
= 3.6V, P
O
= 0.05W to 2W, R
L
= 4Ω
V
DD
= 5.0V, P
O
= 0.1W to 2W, R
L
= 2Ω
(Class-D)
V
DD
= 3.6V, P
O
= 0.05W to 1W, R
L
= 2Ω
(Class-D)
f = 1kHz
0.11
%
G
V
PSRR
C
S
SNR
V
N
Closed Loop Gain
Power Supply Ripple
Rejection
Crosstalk
Signal-to-Noise Ratio
Output Noise
V
DD
= 3V to 5V
V
DD
= 5.0V, Inputs AC-Grounded with C
IN
=
0.47µF
V
DD
= 5.0V, P
O
= 0.5W, R
L
= 8Ω,
G
V
= 24db
V
DD
= 5.0V, THD = 1%, G
V
= 24db
V
DD
= 5.0V, Inputs AC-Grounded
R
L
= 8Ω, THD = 10%
f = 100Hz
f = 1kHz
f = 1kHz
f = 1kHz
A-Weighting
No A-Weighting
Class D Mode
f = 1kHz
-70
-65
-95
90
100
150
90
85
80
10
No Load
8
6
25
No Load
15
10
dB
dB
dB
dB
µV
η
Efficiency
R
L
= 4Ω, THD = 10%
R
L
= 2Ω, THD = 10%
V
DD
= 5.0V
%
Quiescent Current
I
Q
Quiescent Current
V
DD
= 3.6V
V
DD
= 2.5V
V
DD
= 5.0V
V
DD
= 3.6V
V
DD
= 2.5V
mA
mA
PAM8406
Document number: DSxxxxx Rev. 1 - 0
4 of 14
www.diodes.com
March 2013
© Diodes Incorporated
A Product Line of
Diodes Incorporated
PAM8406
Electrical Characteristics
(cont.)
(@T
A
= +25°C, V
DD
= 5V, Gain = 24dB, R
L
= 8Ω, both Class-AB and D mode, unless otherwise specified.)
Symbol
I
MUTE
I
SD
R
DS(ON)
f
SW
V
OS
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
OTP
OTH
Parameter
Muting Current
Shutdown Current
Static Drain-to-Source
On-State Resistor
Switching Frequency
Output Offset Voltage
Enable Input High
Voltage
Enable Input Low
Voltage
MUTE Input High
Voltage
MUTE Input Low
Voltage
MODE Input High
Voltage
MODE Input Low
Voltage
Over Temperature
Protection
Over Temperature
Hysterisis
V
DD
= 5.0V
V
DD
= 2.5V to 5.5V
Test Conditions
V
MUTE
= 0.3V
V
SD
= 0.3V
PMOS
NMOS
Class-D
Min
Typ
2.4
<1
180
140
250
10
Max
Units
mA
µA
mΩ
kHz
mV
V
I
DS
= 500mA, V
GS
= 5V
V
DD
= 2.5V to 5.5V
Input AC-GND, V
DD
= 5.0V
V
DD
= 5.0V
V
DD
= 5.0V
V
DD
= 5.0V
V
DD
= 5.0V
V
DD
= 5.0V
V
DD
= 5.0V
1.4
0.4
1.4
V
0.4
1.4
V
0.4
150
No Load, Junction Temperature
V
DD
= 5.0V
30
°C
PAM8406
Document number: DSxxxxx Rev. 1 - 0
5 of 14
www.diodes.com
March 2013
© Diodes Incorporated
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