Advanced Power MOSFET
FEATURES
❑
Logic-Level Gate Drive
❑
Avalanche Rugged Technology
❑
Rugged Gate Oxide Technology
❑
Lower Input Capacitances
❑
Improved Gate Charge
❑
Extended Safe Operating Area
❑
Lower Leakage Current : 10uA (Max.) @ V
DS
=-200V
❑
Lower R
DS(ON)
: 0.175
Ω
(Typ.)
SFF9250L
BV
DSS
= -200 V
R
DS(on)
= 0.23
Ω
I
D
= -12.6 A
TO-3PF
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
°C)
Continuous Drain Current (T
C
=100
°C)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
=25
°C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8″ from case for 5-seconds
②
①
①
③
①
Value
-200
-12.6
-7.9
-50.4
±20
990
-12.6
20.4
-5.0
90
0.72
- 55 to +150
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/
°C
°C
300
Thermal Resistance
Symbol
R
θJC
R
θJA
Characteristic
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
0.61
40
°C
/W
Units
Rev. A
SFF9250L
Electrical Characteristics
(T
C
=25°C unless otherwise specified)
Symbol
BV
DSS
ΔBV/ΔT
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Characteristic
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain(Miller) Charge
--
--
--
--
--
--
--
--
--
--
--
--
.175 0.23
13
--
Min. Typ. Max. Units
-200
--
-1.0
--
--
--
--
--
-0.17
--
--
--
--
--
--
--
-2.0
100
-100
10
100
μA
Ω
S
pF
V
V
nA
P-CHANNEL
POWER MOSFET
Test Condition
V
GS
=0V,I
D
=-250μA
See Fig 7
V
DS
=-5V,I
D
=-250μA
V
GS
=-20V
V
GS
=20V
V
DS
=-200V
V
DS
=-160V,T
C
=125
°C
V
GS
=-5V,I
D
=-6.3A
V
DS
=-40V,I
D
=-6.3A
④
④
V/
°C
I
D
=-250μA
2500 3250
400 520
210 270
20
50
ns
150 310
100 210
65
90
12
54
140
120
--
--
nC
V
GS
=0V,V
DS
=-25V,f =1MHz
See Fig 5
V
DD
=-100V,I
D
=-12.6A,
R
G
=6.2Ω
See Fig 13
V
DS
=-160V,V
GS
=-5V,
I
D
=-12.6A
See Fig 6 & Fig 12
④ ⑤
④⑤
Source-Drain Diode Ratings and Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
①
④
Min. Typ. Max. Units
--
--
--
--
--
--
--
--
260
2.8
-12.6
-50.4
-1.5
--
--
A
V
Test Condition
Integral reverse pn-diode
in the MOSFET
T
J
=25
°C,I
S
=-12.6A,V
GS
=0V
④
ns T
J
=25
°C,I
F
=-19.5A,V
DD
=-160V
μC
di
F
/dt=100A/μs
Notes ;
①
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
②
L=3.9mH, I
AS
=-19.5A, V
DD
=-50V, R
G
=27Ω, Starting T
J
=25℃
③
I
SD
≤-19.5A,
di/dt≤500A/μs, V
DD
≤BV
DSS
, Starting T
J
=25℃
④
Pulse Test : Pulse Width
≤
300μs, Duty Cycle
≤
2%
⑤
Essentially Independent of Operating Temperature
P-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics
V
GS
-10.0 V
-8.0 V
-6.0 V
-5.0 V
-4.5 V
-4.0 V
-3.5 V
Bottom : -3.0 V
Top :
SFF9250L
Fig 2. Transfer Characteristics
-I
D
, Drain Current [A]
10
1
-I
D
, Drain Current [A]
10
1
150℃
10
0
25℃
-55℃
※
Note
1. V
DS
= -40V
2. 250μ s Pulse Test
10
0
※
Note :
1. 250μ s Pulse Test
2. T
C
= 25℃
10
10
-1
-1
10
0
10
1
2
4
6
8
10
-V
DS
, Drain-Source Voltage [V]
-V
GS
, Gate-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
0.8
Fig 4. Source-Drain Diode Forward Voltage
0.6
V
GS
= - 5V
-I
DR
, Reverse Drain Current [A]
R
DS(on)
, [
Ω
]
Drain-Source On-Resistance
10
1
0.4
V
GS
= - 10V
10
0
0.2
※
Note : T
J
= 25℃
150℃ 25℃
※
Note :
1. V
GS
= 0V
2. 250μ s Pulse Test
0.0
0
20
40
60
80
100
10
-1
0.6
1.2
1.8
2.4
3.0
3.6
-I
D
, Drain Current [A]
-V
SD
, Source-Drain Voltage [V]
Fig 5. Capacitance vs. Drain-Source Voltage
12000
10500
9000
7500
6000
4500
3000
1500
0
-1
10
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Fig 6. Gate Charge vs. Gate-Source Voltage
6
V
DS
= -40V
-V
GS
, Gate-Source Voltage [V]
V
DS
= -100V
4
Capacitances [pF]
V
DS
= -160V
C
iss
C
oss
C
rss
※
Note ;
1. V
GS
= 0 V
2. f = 1 MHz
2
※
Note : I
D
= -19.5 A
0
10
0
10
1
0
20
40
60
80
100
-V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
SFF9250L
Fig 7. Breakdown Voltage vs. Temperature
1.2
2.5
P-CHANNEL
POWER MOSFET
Fig 8. On-Resistance vs. Temperature
-BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
1.1
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
2.0
1.5
1.0
1.0
0.9
※
Note :
1. V
GS
= 0 V
2. I
D
= -250
μ
A
0.5
※
Note :
1. V
GS
= -5 V
2. I
D
= -9.8 A
0.8
-100
-50
0
50
100
o
150
200
0.0
-100
-50
0
50
100
o
150
200
T
J
, Junction Temperature [ C]
T
J
, Junction Temperature [ C]
Fig 9. Max. Safe Operating Area
Operation in This Area
is Limited by R
DS(on)
Fig 10. Max. Drain Current vs. Case Temperature
20
10
2
-I
D
, Drain Current [A]
1 ms
10
1
10 ms
DC
-I
D
, Drain Current [A]
100
µ
s
15
10
10
0
※
Notes :
1. T
C
= 25 C
2. T
J
= 150 C
3. Single Pulse
o
o
5
10
-1
10
0
10
1
10
2
0
25
50
75
100
125
150
-V
DS
, Drain-Source Voltage [V]
T
C
, Case Temperature [℃]
Fig 11. Thermal Response
10
0
( t) , T h e r m a l R e s p o n s e
D = 0 .5
※
N o te s :
1 . Z
θ
J C
( t ) = 0 . 6 1
℃
/ W M a x .
2 . D u ty F a c to r, D = t
1
/t
2
3 . T
J M
- T
C
= P
D M
* Z
θ
J C
( t )
0 .2
10
-1
0 .1
0 .0 5
0 .0 2
0 .0 1
10
-2
P
DM
t
1
s in g le p u ls e
θ
JC
Z
t
2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t
1
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
P-CHANNEL
POWER MOSFET
Fig 12. Gate Charge Test Circuit & Waveform
SFF9250L
50KΩ
12V
200nF
300nF
Same Type
as DUT
V
DS
V
GS
Q
g
-5V
V
GS
Q
gs
Q
gd
DUT
-3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
V
DS
R
G
R
L
V
DD
( 0.5 rated V
DS
)
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
V
in
10%
-5V
DUT
V
DS
90%
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
L
V
DS
V
DD
I
D
R
G
DUT
I
AS
BV
DSS
V
DD
BV
DSS
1
E
AS
= ---- L
L
I
AS2
--------------------
2
BV
DSS
-- V
DD
t
p
Time
V
DS
(t)
I
D
(t)
-5V
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