Si8239x Data Sheet
4.0 A ISODrivers with 2.5 V VDDI and Safety Features
The Si8239x combines two isolated drivers with either an independent input control or a
single input into a single package for high power applications. All drivers operate with a
2.5 V input VDD and a maximum drive supply voltage of 24 V.
The Si8239x isolators are ideal for driving power MOSFETs and IGBTs used in a wide
variety of switched power and motor control applications. These drivers utilize Silicon
Laboratories' proprietary silicon isolation technology, supporting up to 5 kVRMS with-
stand voltage. This technology enables high CMTI (100 kV/µs), lower prop delays and
skew, reduced variation with temperature and age and tighter part-to-part matching.
It also offers some unique features such as an output UVLO fault detection and feed-
back, and automatic shutdown for both drivers, an EN (active high) instead of a DIS (ac-
tive low) pin, a safe delayed start-up time of 1 ms, fail-safe drivers with default low in
case of VDDI power-down, and dead time programmability. The Si8239x family offers
longer service life and dramatically higher reliability compared to opto-coupled gate driv-
ers.
Applications
• Power Delivery Systems
• Motor Control Systems
• Isolated DC-DC Power Supplies
• Lighting Control Systems
• Solar and Industrial Inverters
Safety Approvals (Pending)
• UL 1577 recognized
• Up to 5000 Vrms for 1 minute
• CSA component notice 5A approval
• IEC 60950-1
• VDE certification conformity
• VDE 0884-10
• EN 60950-1 (reinforced insulation)
• CQC certification approval
• GB4943.1
KEY FEATURES
• Two isolated drivers in one package
• Up to 5 kVRMS isolation
• Up to 1500 VDC peak driver-to-driver
differential voltage
• Enhanced output UVLO safety
• Status feedback to controller
• Both outputs drive low on UVLO
• EN pin for enhanced safety
• Extended VDDI: 2.5 V – 5.5 V
• PWM and dual driver versions
• 4.0 A peak output
• High electromagnetic immunity
• Extended start-up time (1ms) for safe
initialization sequence
• 30 ns propagation delay
• Transient immunity: 100 kV/µs
• Programmable dead time
• 10–200 ns
• 40–400 ns
• Deglitch option for filtering noise
• Wide operating range
• –40 to +125 °C
• RoHS-compliant packages
• SOIC-16 wide body
• SOIC-16 narrow body
• AEC-Q100 qualified
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Si8239x Data Sheet
System Overview
2. System Overview
The operation of an Si8239x channel is analogous to that of an optocoupler and gate driver, except an RF carrier is modulated instead
of light. This simple architecture provides a robust isolated data path and requires no special considerations or initialization at start-up.
A simplified block diagram for a single Si8239x channel is shown in the following figure.
Figure 2.1. Simplified Channel Diagram
A channel consists of an RF Transmitter and RF Receiver separated by a semiconductor-based isolation barrier. Referring to the
Transmitter, input A modulates the carrier provided by an RF oscillator using on/off keying. The Receiver contains a demodulator that
decodes the input state according to its RF energy content and applies the result to output B via the output driver. This RF on/off keying
scheme is superior to pulse code schemes as it provides best-in-class noise immunity, low power consumption, and better immunity to
magnetic fields. See the following figure for more details.
Figure 2.2. Modulation Scheme
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Si8239x Data Sheet
System Overview
2.1 Typical Performance Characteristics (4.0 Amp)
The typical performance characteristics depicted in the following figures are for information purposes only. Refer to the Electrical Char-
acteristics table for actual specification limits.
Figure 2.3. Rise/Fall Time vs. Supply Voltage
Figure 2.4. Propagation Delay vs. Supply Voltage
Figure 2.5. Rise/Fall Time vs. Load
Figure 2.6. Propagation Delay vs. Load
Figure 2.7. Propagation Delay vs. Temperature
Figure 2.8. Supply Current vs. Supply Voltage
Figure 2.9. Supply Current vs. Supply Voltage
Figure 2.10. Supply Current vs. Temperature
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