GaAs-IR-Lumineszenzdiode
GaAs Infrared Emitter
SFH 495 P
SFH 4552
29
27
5.0
4.2
Anode
2.54 mm
spacing
5.9
5.5
0.6
0.4
0.8
0.4
Area not flat
Chip position
GEX06971
Area not flat
0.6
0.4
6.9
6.1
5.7
5.5
2.54 mm
spacing
0.8
0.4
5.9
5.5
1.8
1.2
29.5
27.5
Cathode (Diode)
Collector (Transistor)
ø5.1
ø4.8
4.0
3.4
Chip position
0.6
0.4
GEX06630
Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
Wesentliche Merkmale
q
Stimulierter Emitter mit sehr hohem
Wirkungsgrad
q
Laserdiode in diffusem Gehäuse
q
Besonders geeignet für Impulsbetrieb bei
hohen Strömen
q
Hohe Zuverlässigkeit
q
Gegurtet lieferbar
Anwendungen
q
Datenübertragung
q
Fernsteuerungen
q
„Messen, Steuern, Regeln“
Features
q
Stimulated emitter with high efficiency
q
Laser diode in diffuse package
q
Suitable esp. for pulse operation at high
current
q
High reliability
q
Available on tape and reel
Applications
q
Data transfer
q
Remote controls
q
For drive and control circuits
Semiconductor Group
1
1998-09-18
feo06652
fex06971
1.8
1.2
3.85
3.35
ø5.1
ø4.8
0.6
0.4
SFH 495 P
SFH 4552
Typ
Type
SFH 495 P
Bestellnummer
Ordering Code
Q62703-Q7891
Gehäuse
Package
5-mm-LED-Gehäuse (T 1
3
/
4
), plan, schwarz eingefärbt,
2.54-mm-Raster,
Kathodenkennzeichnung: kürzerer Anschluß
5 mm LED package (T 1
3
/
4
), flat, black colored,
spacing 2.54 mm, cathode marking: short lead.
5-mm-LED-Gehäuse (T 1
3
/
4
), plan, weiß diffus eingefärbt,
2.54-mm-Raster,
Kathodenkennzeichnung: kürzerer Anschluß
5 mm LED package (T 1
3
/
4
), flat, white diffuse colored,
spacing 2.54 mm, cathode marking: short lead.
SFH 4552
Q62702-P5054
Grenzwerte
(
T
A
= 25
°C)
Maximum Ratings
Bezeichnung
Description
Betriebs- und Lagertemperatur
Operating and storage temperature range
Sperrspannung
Reverse voltage
Stoßstrom,
t
p
= 200
µs,
D
= 0
Surge current
Verlustleistung
Power dissipation
Wärmewiderstand
Thermal resistance
Kennwerte
(
T
A
= 25
°C)
Characteristics
Bezeichnung
Description
Wellenlänge der Strahlung
Wavelength at peak emission
I
F
= 200 mA,
t
p
= 20 ms
Spektrale Bandbreite bei 50 % von
I
max
Spectral bandwidth at 50 % of
I
max
I
F
= 200 mA
Symbol
Symbol
λ
peak
Wert
Value
940
Einheit
Unit
nm
Symbol
Symbol
Wert
Value
– 40 ... + 85
0 ... + 85
1
1
160
450
Einheit
Unit
°C
V
A
mW
K/W
T
stg
T
op
V
R
I
FSM
P
tot
R
thJA
∆λ
4
nm
Semiconductor Group
2
1998-09-18
SFH 495 P
SFH 4552
Kennwerte
(
T
A
= 25
°C)
Characteristics
Bezeichnung
Description
Abstrahlwinkel
Half angle
SFH 495 P
SFH 4552
Schaltzeiten,
I
e
von 10 % auf 90 % und von
90 % auf 10 %, bei
I
F
= 200 mA,
R
L
= 50
Ω
Switching times,
I
e
from 10 % to 90 % and
from 90 % to10 %,
I
F
= 200 mA,
R
L
= 50
Ω
Kapazität
Capacitance
V
R
= 0 V,
f
= 1 MHz
Durchlaßspannung
Forward voltage
I
F
= 1 A,
t
p
= 100
µs
Schwellenstrom
1)
Threshold current
1)
Gesamtstrahlungsfluß
Total radiant flux
I
F
= 1 A,
t
p
= 10
µs
Strahlstärke
Radiant intensity
I
F
= 1 A,
t
p
= 10
µs
SFH 495 P
SFH 4552
1)
Symbol
Symbol
ϕ
Wert
Value
Einheit
Unit
Grad
deg.
±
30
±
50
t
r
,
t
f
7
ns
C
o
90
pF
V
F
I
th
Φ
e
2.1
< 150
700
V
mA
mW
I
e
mW/sr
400
200
Remark:
This IRED works efficiently at forward currents higher than
I
th
.
Warning:
This data sheet refers to high power infrared emitting semiconductors.
Depending on operating conditions (drive current, pulse duration, optics, etc.) they may emit
luminance/radiance levels considered harmful to the human eye, acc. to IEC 825.1.
When operating powerful emitters, care should be taken to comply with IEC 825.1 to mini-
mize any possible eye hazard:
- Use lowest possible drive level
- Use diffusing optics where possible
- Avoid staring into powerful emitters or connected fibers
Semiconductor Group
3
1998-09-18
SFH 495 P
SFH 4552
Radiant intensity
I
e
=
f
(I
F
)
160
%
140
120
OHF00328
Forward current
I
F
=
f
(V
F
)
2.0
A
1.8
1.6
1.4
OHF00329
Ι
e
Ι
F
100
80
60
40
1.2
1.0
0.8
0.6
0.4
20
0
0.2
0
0.4
0.8
1.2
1.6 A 2.0
Ι
F
0
1.4
1.6
1.8
2.0
2.2 V 2.4
V
F
Radiation characteristics SFH 495 P
I
rel
=
f
(ϕ)
40
30
20
10
0
1.0
OHF00330
ϕ
50
0.8
60
0.6
70
0.4
80
90
0.2
0
100
1.0
0.8
0.6
0.4
0
20
40
60
80
100
120
Radiation characteristics SFH 4552
I
rel
=
f
(ϕ)
40
30
20
ϕ
10
0
1.0
OHF00441
50
0.8
60
0.6
70
0.4
80
90
0.2
0
100
1.0
0.8
0.6
0.4
0
20
40
60
80
100
120
Semiconductor Group
4
1998-09-18
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