TRIOS
®
* PHOTOTRANSISTOR
OPTOCOUPLER
FEATURES
• High Current Transfer Ratios
SFH600-0, 40 to 80%
SFH600-1, 63 to 125%
SFH600-2, 100 to 200%
SFH600-3, 160 to 320%
• Isolation Test Voltage (1 Sec.), 5300 VACRMS
• VCEsat 0.25 (£0.4) V, IF=10 mA, IC=2.5 mA
• High Quality Premium Device
• Long Term Stability
• Storage Temperature, –55
∞
to +150
∞
C
• Underwriters Lab File #E52744
V
•
VDE 0884 Available with Option 1
D E
SFH600 SERIES
Dimensions in inches (mm)
Pin One ID
3
.248 (6.30)
.256 (6.50)
4
5
6
2
1
Anode 1
Cathode 2
NC 3
6 Base
5 Collector
4 Emitter
.335 (8.50)
.343 (8.70)
.039
(1.00)
Min.
4°
typ.
.018 (0.45)
.022 (0.55)
.300 (7.62)
typ.
.130 (3.30)
.150 (3.81)
18° typ.
.020 (.051) min.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
.010 (.25)
.014 (.35)
.300 (7.62)
.347 (8.82)
.110 (2.79)
.150 (3.81)
DESCRIPTION
The SFH600 is an optocoupler with a GaAs LED
emitter which is optically coupled with a silicon pla-
nar phototransistor detector. The component is
packaged in a plastic plug-in case, 20 AB DIN
41866.
The coupler transmits signals between two electri-
cally isolated circuits. The potential difference
between the circuits to be coupled is not allowed to
exceed the maximum permissible insulating volt-
age.
Maximum Ratings
Emitter
Reverse Voltage................................................. 6 V
DC Forward Current...................................... 60 mA
Surge Forward Current (t
p
=10
µ
s).................. 2.5 A
Total Power Dissipation.............................. 100 mW
Detector
Collector-Emitter Voltage ................................ 70 V
Emitter-Base Voltage ....................................... 7 V
Collector Current........................................... 50 mA
Collector Current (t=1 ms) .......................... 100 mA
Power Dissipation ...................................... 150 mW
Package
Isolation Test Voltage (between emitter and
detector referred to climate DIN 40046,
part 2, Nov. 74) (t=1 sec.)..............5300 VAC
RMS
Creepage......................................................
≥
7 mm
Clearance
.......................................................... ≥
7 mm
Isolation Thickness between Emitter &
Detector .....................................................
≥
0.4 mm
Comparative Tracking Index per
DIN IEC 112/VDE0303, part 1........................175
Isolation Resistance
V
IO
=500 V, T
A
=25
°
C
................................... ≥
10
12
Ω
V
IO
=500 V, T
A
=100
°
C
................................. ≥
10
11
Ω
Storage Temperature Range........ –55
°
C to +150
°
C
Ambient Temperature Range....... –55
°
C to +100
°
C
Junction Temperature ....................................100
°
C
Soldering Temperature (max. 10 s, dip
soldering: distance to seating plane
≥
1.5 mm) ....................................................260
°
C
Characteristics
(T
A
=25
°
C)
Symbol
Emitter
Forward Voltage
Breakdown Voltage
Reverse Current
Capacitance
Thermal Resistance
Detector
Capacitance
Collector-Emitter
Collector-Base
Emitter-Base
Thermal Resistance
Package
Saturation Voltage,
Collector-Emitter
Coupling Capacitance
V
CEsat
C
IO
0.25 (
≤
0.4)
0.6
V
pF
I
F
=10 mA,
I
C
=2.5 mA
V
IO
=0, f=1 MHz
pF
C
CE
C
CB
C
EB
R
THJamb
5.2
6.5
9.5
500
f=1 MHz
V
CE
=5 V
V
CB
=5 V
V
EB
=5 V
V
F
V
BR
I
R
C
O
R
THJamb
1.25 (
≤
1.65)
≥
6
0.01 (
≤
10)
25
750
V
V
µ
A
pF
I
F
=60 mA
I
R
=10
µ
A
V
R
=6 V
V
F
=0 V, f=1 MHz
Unit
Condition
°
C/W
°
C/W
*TRIOS
—
TR
ansparent
IO
n
S
hield
5–1
This document was created with FrameMaker 4.0.4
Figure 6. Current transfer ratio versus
diode current
(T
A
=50°C) V
CE
=5 V
I
C
/I
F
=f (I
F
)
Figure 9. Transistor characteristics
(HFE =550) SFH600-2, -3
I
C
=f(V
CE
)
(T
A
=25°C, I
F
=0)
Figure 12. Collector emitter
off-state current
I
CEO
=f (V, T)
(T
A
=25°C, I
F
=0)
Figure 7. Current transfer ratio
versus diode current
(T
A
=75°C)
V
CE
=5V
I
C
/I
F
=f (I
F
)
Figure 10. Output characteristics
SFH600-2, -3
(T
A
=25°C) I
C
=f(V
CE
)
Figure 13. Saturation voltage
versus collector current and
modulation depth SFH600-0
V
CEsat
=f (I
C
) (T
A
=25°C)
Figure 8. Current transfer ratio versus
temperature
(I
F
=10 mA, V
CE
=5 V)
I
C
/I
F
=f(T)
Figure 11. Forward voltage
V
F
=f (I
F
)
SFH600
5–3
Figure 14. Saturation voltage versus
collector current and modulation
depth SFH600-1
V
CEsa
t=f (I
C
) (T
A
=25°C)
Figure 17. Permissible pulse load
D=parameter, T
A
=25°C, I
F
=f (t
p
)
Figure 20. Transistor capacitance
C=f(V
O
) (T
A
=25°C, f=1 MHz)
Figure 15. Saturation voltage versus
collectorcurrent and modulation
depth SFH600-2
V
CEsat
=f (I
C
) (T
A
=25°C)
Figure 18. Permissible power
dissipation for transistor and diode
P
tot
=f (T
A
)
Figure 16. Saturation voltage versus
collectorcurrent and modulation
depth SFH600-3
V
CEsat
=f (I
C
) (T
A
=25°C)
Figure 19. Permissible forward
current diode
P
tot
=f (T
A
)
SFH600
5–4
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