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NDPL180N10B

产品描述N-Channel Power MOSFET
文件大小668KB,共5页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
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NDPL180N10B概述

N-Channel Power MOSFET

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NDPL180N10B
Power MOSFET
100V, 3.0mΩ, 180A, N-Channel
www.onsemi.com
Features
Ultra Low On-Resistance
Low Gate Charge
High Speed Switching
100% Avalanche Test
Pb-Free and RoHS compliance
VDSS
100V
RDS(on) Max
3.0mΩ@ 15V
3.5mΩ@ 10V
ID Max
180A
Specifications
Absolute Maximum Ratings
at Ta = 25C
(Note 1)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (DC) Limited by Package
Drain Current (Pulse)
PW10s, duty cycle1%
Power Dissipation
Tc=25C
Junction Temperature
Storage Temperature
Source Current (Body Diode)
Avalanche Energy (Single Pulse) (Note 2)
Lead Temperature for Soldering
Purposes, 3mm from Case for 10 Seconds
Symbol
VDSS
VGSS
ID
IDL
IDP
PD
Tj
Tstg
IS
EAS
TL
Value
100
20
180
100
600
2.1
200
175
55
to +175
100
451
260
Unit
V
V
A
A
Electrical Connection
N-Channel
2
1
A
W
C
C
A
mJ
C
1 : Gate
2 : Drain
3 : Source
3
Marking
180N10
B
1
2
3
LOT No.
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
2 : VDD=48V, L=100H, IAV=70A (Fig.1)
TO-220-3L
Thermal Resistance Ratings
Parameter
Junction to Case Steady State
Junction to Ambient (Note 3)
Symbol
R
JC
R
JA
Value
0.75
71.4
Unit
C/W
Note 3 : Insertion mounted
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of this data sheet.
©
Semiconductor Components Industries, LLC, 2016
January 2016 - Rev. 4
1
Publication Order Number :
NDPL180N10B/D

 
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