NDPL100N10B
Power MOSFET
100V, 7.2mΩ, 100A, N-Channel
Features
•
Low On-Resistance
•
Low Gate Charge
•
High Speed Switching
•
100% Avalanche Tested
•
Pb-Free and RoHS Compliance
VDSS
100V
RDS(on) Max
7.2 mΩ@15V
8.7 mΩ@10V
ID Max
100A
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Specifications
Absolute Maximum Ratings
at Ta = 25°C
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
PW≤10μs, duty cycle≤1%
Power Dissipation
Tc=25°C
Junction Temperature
Storage Temperature
Source Current (Body Diode)
Avalanche Energy (Single Pulse) *
Lead Temperature for Soldering
Purposes, 3mm from Case for 10 Seconds
1
Electrical Connection
N-Channel
2
Value
100
±20
100
400
2.1
110
175
−55
to +175
100
147
260
Unit
V
V
A
A
W
°C
°C
A
mJ
°C
Symbol
VDSS
VGSS
ID
IDP
PD
Tj
Tstg
IS
EAS
TL
1
1 : Gate
2 : Drain
3 : Source
3
Marking
100N10
B
LOT No.
Thermal Resistance Ratings
Parameter
Junction to Case Steady State
Junction to Ambient *
2
Note : *
1
VDD=48V, L=100μH, IAV=40A (Fig.1)
*
2
Insertion mounted
Symbol
R
θJC
R
θJA
Value
1.36
71.4
Unit
°C/W
1
2
3
TO-220-3L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of this data sheet.
©
Semiconductor Components Industries, LLC, 2015
March 2015 - Rev. 1
1
Publication Order Number :
NDPL100N10B/D
NDPL100N10B
Electrical Characteristics
at Ta = 25°C
Parameter
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Static Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Forward Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
gFS
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
trr
Qrr
IS=100A, VGS=0V
See Fig.3
IS=100A, VGS=0V, VDD=50V, di/dt=100A/μs
VDS=48V, VGS=10V, ID=100A
See Fig.2
VDS=50V, f=1MHz
Conditions
ID=10mA, VGS=0V
VDS=100V, VGS=0V
VGS=±20V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=50A
ID=50A, VGS=15V
ID=50A, VGS=10V
2
75
6.0
6.7
2,950
1,250
20
40
385
68
52
35
13
10
1.1
130
400
1.5
7.2
8.7
Value
min
100
10
±100
4
typ
max
Unit
V
μA
nA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Fig.1 Unclamped Inductive Switching Test Circuit
D
≥50Ω
L
Fig.2 Switching Time Test Circuit
G
S
NDPL100N10B
VDD
10V
0V
50Ω
Fig.3 Reverse Recovery Time Test Circuit
NDPL100N10B
G
S
VDD
D
L
Driver MOSFET
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2
NDPL100N10B
Package Dimensions
NDPL100N10BG
TO-220, 3-Lead / TO-220-3L
CASE 221AU
ISSUE O
unit : mm
1:Gate
2:Drain
3:Source
ORDERING INFORMATION
Device
NDPL100N10BG
Package
TO-220, 3-Lead
TO-220-3L
Shipping
50 pcs. / Tube
note
Pb-Free
Note on usage : Since the NDPL100N10B is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States
and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of
SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without
further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose,
nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including
without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can
and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are
not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers,
employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was
negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all
applicable copyright laws and is not for resale in any manner.
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