NTMFS4955N
Power MOSFET
Features
30 V, 48 A, Single N−Channel, SO−8 FL
•
•
•
•
•
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
Optimized for 5 V, 12 V Gate Drives
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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V
(BR)DSS
30 V
R
DS(ON)
MAX
5.6 mW @ 10 V
8.5 mW @ 4.5 V
D (5,6)
I
D
MAX
48 A
Applications
•
CPU Power Delivery
•
DC−DC Converters
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
qJA
(Note 1)
Power Dissipation
R
qJA
(Note 1)
Continuous Drain
Current R
qJA
≤
10 s
(Note 1)
Power Dissipation
R
qJA
≤
10 s (Note 1)
Continuous Drain
Current R
qJA
(Note 2)
Power Dissipation
R
qJA
(Note 2)
Continuous Drain
Current R
qJC
(Note 1)
Power Dissipation
R
qJC
(Note 1)
Pulsed Drain
Current
Steady
State
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C
T
C
= 25°C
T
C
=100°C
T
C
= 25°C
T
A
= 25°C, t
p
= 10
ms
T
A
= 25°C
P
D
I
DM
I
Dmax
T
J
,
T
STG
I
S
dV/d
t
E
AS
P
D
I
D
P
D
I
D
P
D
I
D
Symbol
V
DSS
V
GS
I
D
Value
30
±20
16.7
10.5
2.70
25.2
15.9
6.16
9.7
6.2
0.92
48
30
23.2
210
100
−55
to
+150
21
6.0
34
W
A
A
°C
A
V/ns
mJ
W
A
W
A
W
A
Unit
V
V
A
G (4)
S (1,2,3)
N−CHANNEL MOSFET
MARKING
DIAGRAM
D
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
A
Y
W
ZZ
S
S
S
G
4955N
AYWZZ
D
D
D
= Assembly Location
= Year
= Work Week
= Lot Traceability
ORDERING INFORMATION
Device
NTMFS4955NT1G
NTMFS4955NT3G
Package
SO−8 FL
(Pb−Free)
SO−8 FL
(Pb−Free)
Shipping
†
1500 /
Tape & Reel
5000 /
Tape & Reel
Current Limited by Package
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source DV/DT
Single Pulse Drain−to−Source Avalanche
Energy (T
J
= 25°C, V
DD
= 24 V, V
GS
= 10 V,
I
L
= 26 A
pk
, L = 0.1 mH, R
G
= 25
W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
©
Semiconductor Components Industries, LLC, 2013
December, 2013
−
Rev. 7
1
Publication Order Number:
NTMFS4955N/D
NTMFS4955N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case (Drain)
Junction−to−Ambient – Steady State (Note 3)
Junction−to−Ambient – Steady State (Note 4)
Junction−to−Ambient – (t
≤
10 s) (Note 3)
3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size.
Symbol
R
qJC
R
qJA
R
qJA
R
qJA
Value
5.4
46.3
136.2
20.3
°C/W
Unit
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
(transient)
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSSt
V
(BR)DSS
/
T
J
I
DSS
I
GSS
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
V
GS
= 10 V
V
GS
= 4.5 V
Forward Transconductance
g
FS
C
ISS
C
OSS
C
RSS
C
RSS
/
C
ISS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
Q
G(TOT)
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
V
GS
= 10 V, V
DS
= 15 V; I
D
= 30 A
V
GS
= 4.5 V, V
DS
= 15 V; I
D
= 30 A
V
GS
= 0 V, V
DS
= 15 V, f = 1 MHz
V
GS
= 0 V, f = 1 MHz, V
DS
= 15 V
I
D
= 30 A
I
D
= 15 A
I
D
= 30 A
I
D
= 15 A
V
DS
= 1.5 V, I
D
= 15 A
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Capacitance Ratio
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
SWITCHING CHARACTERISTICS
(Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
9.5
32.7
16.4
6.2
ns
1264
483
143
0.11
10.8
2.0
3.8
4.2
21.5
nC
nC
0.22
pF
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 250
mA
V
GS
= 0 V, I
D(aval)
= 11.0 A,
T
case
= 25°C, t
transient
= 100 ns
30
34
21
1.0
10
±100
V
V
Symbol
Test Condition
Min
Typ
Max
Unit
mV/°C
mA
nA
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 5)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
DS
= 0 V, V
GS
=
±20
V
V
GS
= V
DS
, I
D
= 250
mA
1.2
1.7
3.9
4.5
4.5
6.8
6.7
52
2.2
V
mV/°C
5.6
mW
8.5
S
5. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NTMFS4955N
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
SWITCHING CHARACTERISTICS
(Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
t
RR
t
a
t
b
Q
RR
L
S
L
D
L
G
R
G
T
A
= 25°C
V
GS
= 0 V, dIS/dt = 100 A/ms,
I
S
= 30 A
V
GS
= 0 V,
I
S
= 30 A
T
J
= 25°C
T
J
= 125°C
0.86
0.75
25.8
12.4
13.4
13.6
nC
ns
1.1
V
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 10 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
7.4
27.5
20.3
4.1
ns
Symbol
Test Condition
Min
Typ
Max
Unit
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
Source Inductance
Drain Inductance
Gate Inductance
Gate Resistance
1.00
0.005
1.84
1.0
2.2
nH
nH
nH
W
5. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
6. Switching characteristics are independent of operating junction temperatures.
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3
NTMFS4955N
TYPICAL CHARACTERISTICS
120
10 V
110
I
D
, DRAIN CURRENT (A)
100
90
80
70
60
50
40
30
20
10
0
V
GS
= 2.5 V
0
1
2
3
4
5
3.5 V
120
110
100
90
80
70
60
50
40
30
20
10
0
V
DS
= 10 V
4.5 V
T
J
= 25°C
4.0 V
I
D
, DRAIN CURRENT (A)
T
J
=
−55°C
T
J
= 25°C
T
J
= 125°C
3.0 V
1
2
3
4
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.020
0.018
0.016
0.014
0.012
0.010
0.008
0.006
0.004
0.002
0
I
D
= 30 A
0.011
0.010
0.009
0.008
0.007
0.006
0.005
0.004
0.003
10 20
Figure 2. Transfer Characteristics
T = 25°C
V
GS
= 4.5 V
V
GS
= 10 V
3
4
5
6
V
GS
(V)
7
8
9
10
30
40
50
60
70
80
90 100 110 120
I
D
, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. V
GS
1.7
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
−50
10
I
D
= 30 A
V
GS
= 10 V
I
DSS
, LEAKAGE (nA)
1,000
10,000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
T
J
= 150°C
T
J
= 125°C
100
T
J
= 85°C
V
GS
= 0 V
5
10
15
20
25
30
−25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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4
NTMFS4955N
TYPICAL CHARACTERISTICS
1600
1400
C, CAPACITANCE (pF)
1200
1000
800
600
400
200
0
0
5
C
rss
C
oss
C
iss
T
J
= 25°C
V
GS
= 0 V
11
10
9
8
7
6
5
4
3
2
1
0
Qgs
Qgd
T
J
= 25°C
V
GS
= 10 V
V
DD
= 15 V
I
D
= 30 A
0
2
4
6
8
10
12
14
16
18
20
22
Qg, TOTAL GATE CHARGE (nC)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
QT
10
15
20
25
30
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
1000
V
GS
= 10 V
V
DD
= 15 V
I
D
= 15 A
I
S
, SOURCE CURRENT (A)
30
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
V
GS
= 0 V
25
20
15
10
T
J
= 125°C
5
0
T
J
= 25°C
t
d(off)
t
f
t
r
t, TIME (ns)
100
10
t
d(on)
1
1
10
R
G
, GATE RESISTANCE (W)
100
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
0 V < V
GS
< 10 V
Single Pulse
T
C
= 25°C
10
ms
10
1
0.1
0.01
R
DS(on)
Limit
Thermal Limit
Package Limit
0.01
0.1
1
10
100
ms
1 ms
10 ms
dc
E
AS
, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
1000
100
40
36
32
28
24
20
16
12
8
4
0
Figure 10. Diode Forward Voltage vs. Current
I
D
= 26 A
I
D
, DRAIN CURRENT (A)
100
25
50
75
100
125
150
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
T
J
, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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