SFH6345
HIGH SPEED 5.3 kV OPTOCOUPLER
FEATURES
• Direct Replacement for HCPL4503
• High Speed Optocoupler without Base Connection
• GaAlAs Emitter
• Integrated Detector with Photodiode and Transistor
• High Data Transmission Rate: 1 MBit/s
• TTL Compatible
• Open Collector Output
• CTR at IF=16 mA, V
O
=0.4 V, V
CC
=4.5 V,
T
A
=25
°
C:
≥
19%
• Good CTR Linearity Relative to Forward Current
• Field Effect Stable
• Low Coupling Capacitance
• Very High Common Mode Transient Immunity
dV/dt:
≥
15 kV/
µ
s at V
CM
=1500 V
• Insulation Test Voltage: 5300 VAC
PK
• •
D
V
E
VDE 0884 Available with Option 1
• UL Approval, File #E52744
APPLICATIONS
• Data Communications
• IGBT Drivers
• Programmable Controllers
DESCRIPTION
The SFH6345 is an optocoupler with a GaAlAs infrared
emitting diode, optically coupled to an integrated photode-
tector consisting of a photodiode and a high speed transis-
tor in a DIP-8 plastic package. The device is similar to the
6N135 but has an additional Faraday shield on the detector
which enhances the input-output dv/dt immunity.
Signals can be transmitted between two electrically sepa-
rated circuits up to frequencies of 2 MHz. The potential dif-
ference between the circuits to be coupled should not
exceed the maximum permissible reference voltages.
Package Dimensions in Inches (mm)
4
3
2
1
Pin
One
I.D.
.268 (6.81)
.255 (6.48)
NC 1
Anode 2
Cathode 3
5
6
7
8
.390 (9.91)
.379 (9.63)
8 VCC
7 NC
6 Collector
5 Emitter
NC 4
.045 (1.14)
.030 (.76)
.150 (3.81)
.130 (3.30)
.305 typ.
(7.75) typ.
.135 (3.43)
.115 (2.92)
4°
Typ.
.022 (.56)
.018 (.46)
.100 (2.54)
Typ.
.040 (1.02)
.030 (.76 )
3°–9°
10
°
Typ.
.012 (.30)
.008 (.20)
Absolute Maximum Ratings
Emitter (GaAlAs)
Reverse Voltage............................................................................ 3 V
DC Forward Current ................................................................25 mA
Surge Forward Current .................................................................1 A
tp
≤
1
µ
s, 300 pulses/sec.
Total Power Dissipation...........................................................45 mW
Detector (Si Photodiode + Transistor)
Supply Voltage ................................................................ –0.5 to 30 V
Output Voltage .............................................................. –0.5 to
≥
25 V
Output Current...........................................................................8 mA
Total Power Dissipation.........................................................100 mW
Package Insulation
Isolation Test Voltage
between emitter and detector .....................................5300 VAC
PK
(refer to climate DIN 40046, part 2, Nov. 74)
Creepage........................................................................
≥
7 mm min.
Clearance .......................................................................
≥
7 mm min.
Comparative Tracking Index
per DIN IEC 112/VDE0303, part 1 .........................................
≥
175
Isolation Resistance
V
IO
=500 V, T
A
=25
°
C, R
ISOL
...............................................
≥
10
12
Ω
V
IO
=500 V, T
A
=100
°
C, R
ISOL
.............................................
≥
10
11
Ω
Storage Temperature Range ...................................... –55 to +150
°
C
Ambient Temperature Range...................................... –55 to +100
°
C
Junction Temperature .............................................................. 100
°
C
Soldering Temperature (t=10 sec. max.)................................. 260
°
C
Dip soldering: distance to seating plane
≥
1.5 mm
5–279
Characteristics
(T
A
=0
°
to 70
°
C, unless otherwise specified,typical values T
A
=25
°
C)
Description
Emitter (IR GaAlAs)
Forward Voltage, I
F
=16 mA
Reverse Current, V
R
=3 V
Capacitance, V
R
=0 V, f=1 MHz
Thermal Resistance
Detector (Si Photodiode + Transistor)
Supply Current, Logic High
I
F
=0, V
O
(open), V
CC
=15 V, T
A
=25
°
C
I
F
=0, V
O
(open), V
CC
=15 V
Output Current, Output High
I
F
=0, V
O
(open), V
CC
=5.5 V, T
A
=25
°
C
I
F
=0, V
O
(open), V
CC
=15 V, T
A
=25
°
C
I
F
=0, V
O
(open), V
CC
=15 V
Capacitance, V
CE
=5 V, f=1 MHz
Thermal Resistance
Package
Coupling Capacitance
Coupling Transfer Ratio
I
F
=16 mA, V
O
=0.4 V, V
CC
=4.5 V, T
A
=25
°
C
I
F
=16 mA, V
O
=0.5 V, V
CC
=4.5 V
Collector Emitter Saturation Voltage
I
F
=16 mA, I
O
=2.4 mA, V
CC
=4.5 V, T
A
=25
°
C
Supply Current, Logic Low
I
F
=16 mA, V
O
open, V
CC
=15 V
C
C
I
C
/I
F
19
15
0.6
30
—
0.1
80
0.4
200
V
µ
A
pF
%
I
CCH
µ
A
0.01
1
2
µ
A
.003
.01
—
3
300
0.5
1
50
pF
°
K/W
V
F
I
R
C
0
R
thJA
1.6
0.5
75
700
1.9
10
V
µ
A
pF
°
K/W
Symbol
Min.
Typ.
Max.
Unit
I
OH
C
CE
R
thJA
V
OL
I
CCL
Switching Times
(typ.)
Pulse generator
Z
O
=50
Ω
t
r,
t
f
=5 ns
duty cycle 10%
t≤100 µs
1
I
F
2
V
O
5V
1.5 V
t
t
PHL
t
PLH
I
F
Monitor
3
100
Ω
4
7
6
5
C
L
=15 pF
C=100 nF
R
L
V
O
8
5V
I
F
t
V
OL
Description
Propagation Delay Time (High–Low)
I
F
=16 mA, V
CC
=5 V, R
L
=1.9 k
Ω
, T
A
=25
°
C
Propagation Delay Time (Low–High)
I
F
=16 mA, V
CC
=5 V, R
L
=1.9 k
Ω,
T
A
=25°C
Symbol
t
PHL
t
PLH
Min.
Typ.
0.3
0.3
Max.
0.8
0.8
Unit
µ
s
µs
5–280
SFH6345
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