NYE08-10B6ST1G
Protected Triac
Silicon Bidirectional Thyristor
Designed for use in solid state relays, MPU interface, TTL logic and
other light industrial or consumer applications. Supplied in surface
mount package for use in automated manufacturing.
Features
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•
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Sensitive Gate Trigger Current in Two Quadrants
Blocking Voltage to 600 V
Surface Mount Package
Compliant with IEC6100−4−5
These are Pb−Free Devices
PROTECTED TRIAC
0.8 AMPERE RMS
600 VOLTS
OUT
G
COM
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Peak Repetitive Off−State Voltage (Note 1)
(Sine Wave, 50 to 60 Hz, Gate Open,
T
J
= 25 to
125°C)
On−State Current RMS (T
C
= 80°C)
(Full Sine Wave 50 to 60 Hz)
Peak Non−repetitive Surge Current (One
Full Cycle Sine Wave, 60 Hz, T
C
= 25°C)
Circuit Fusing Considerations
(Pulse Width = 8.3 ms)
Peak Gate Power
(T
C
= 80°C, Pulse Width
v
1.0
ms)
Average Gate Power
(T
C
= 80°C, t = 8.3 ms)
Non−Repetitive Line Peak Voltage
(IEC6100−4−5)
Critical Rate of Rise of All−State Current
(I
G
= 2 x I
GT
, t
r
< 100
ms,
T
J
= 1255C)
Operating Junction Temperature Range
Storage Temperature Range
Symbol
V
DRM,
V
RRM
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
V
PP
di/dt
T
J
T
stg
Value
600
Unit
V
SOT−223
CASE 318E
1
8.0
0.4
5.0
0.1
2.0
100
−40
to +125
−40
to +150
A
A
2
s
W
W
kV
A/ms
°C
°C
1
2
3
4
A
Y
W
08106
G
=
=
=
=
=
MARKING
DIAGRAM
AYW
08106G
G
0.8
A
Assembly Location
Year
Work Week
Device Code
Pb−Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
OUT
COM
Gate
COM
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
ORDERING INFORMATION
Device
NYE08−10B6ST1G
Package
SOT−223
(Pb−Free)
Shipping
†
1000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2012
November, 2012
−
Rev. 0
1
Publication Order Number:
NYE08−10B6S/D
NYE08−10B6ST1G
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes for 10 Seconds
Symbol
R
qJC
R
qJA
T
L
Max
50
160
260
Unit
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(V
D
= V
DRM
/V
RRM
; Gate Open)
ON CHARACTERISTICS
Peak On−State Voltage
(I
TM
=
"1.1
A Peak; Pulse Width
v
2.0 ms, Duty Cycle
v
2.0%)
Gate Trigger Current (dc)
(V
D
= 12 Vdc, R
L
= 30
W)
OUT(+), G(−)
OUT(−), G(−)
Latching Current (V
D
= 12 V, I
G
= 1.2 x I
GT
)
OUT(+), G(−) All Types
OUT(−), G(−) All Types
Gate Trigger Voltage (dc) (V
D
= 12 Vdc, R
L
= 30
W)
Gate Non−Trigger Voltage (V
D
= 12 V, R
L
= 30
W,
T
J
= 125°C)
Quadrants 2, 3
Dynamic Resistance
Holding Current (V
D
= 12 Vdc, Initiating Current = 50 mA, Gate Open)
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current
(Commutating dv/dt = 15 V/ms, Gate Open, T
J
= 125°C, f = 250 Hz,
without Snubber)
Critical Rate of Rise of Off−State Voltage (V
D
= 67% V
DRM
, Exponential
Waveform, Gate Open, T
J
= 125°C)
Clamping Voltage (I
CL
= 1.0 mA, t
p
= 1 ms, T
J
= 125°C)
di/dt(c)
0.3
−
−
A/ms
V
TM
I
GT
0.15
0.15
I
L
−
−
−
0.15
−
−
−
−
−
−
−
−
−
−
10
10
mA
30
30
1.0
−
300
25
V
V
mW
mA
−
−
1.3
V
mA
T
J
= 25°C
T
J
= +125°C
I
DRM
, I
RRM
−
−
−
−
2.0
200
mA
mA
Symbol
Min
Typ
Max
Unit
V
GT
V
GD
R
D
I
H
dv/dt
500
V
CL
650
−
−
−
−
V/ms
V
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NYE08−10B6ST1G
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Quadrant 1
OUT+
Symbol
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
Parameter
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
Maximum On State Voltage
Holding Current
Quadrant 3
OUT−
I
H
V
TM
I
RRM
at V
RRM
on state
I
H
V
TM
off state
+ Voltage
I
DRM
at V
DRM
Quadrant Definitions for a Triac
OUT POSITIVE
(Positive Half Cycle)
+
(+) OUT
(+) OUT
Quadrant II
(−) I
GT
GATE
COM
REF
(+) I
GT
GATE
COM
REF
Quadrant I
I
GT
−
(−) OUT
(−) OUT
+ I
GT
Quadrant III
(−) I
GT
GATE
COM
REF
(+) I
GT
GATE
COM
REF
−
OUT NEGATIVE
(Negative Half Cycle)
Quadrant IV
All polarities are referenced to COM.
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NYE08−10B6ST1G
100
I
GT
, GATE TRIGGER CURRENT (mA)
25
20
15
10
Q2
5
0
−40 −25 −10
Q3
10
I
T
, INSTANTANEOUS ON−STATE CURRENT (A)
1
5
20
35
50
65
80
95 110 125
T
J
, JUNCTION TEMPERATURE (°C)
Figure 2. Typical Gate Trigger Current
T
J
= 125°C
1
V
GT
, GATE TRIGGER VOLTAGE (V)
0.1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
−40 −25 −10
5
20
35
50
65
80
95 110 125
Q2
Q3
T
J
= 25°C
0.01
T
J
=
−40°C
0.001
0.3
0.8
1.3
1.8
2.3
2.8
3.3
3.8
T
J
, JUNCTION TEMPERATURE (°C)
Figure 3. Typical Gate Trigger Voltage
V
T
, INSTANTANEOUS ON-STATE VOLTAGE (V)
Figure 1. Maximum On−State Voltage
Characteristics
60
I
L
, LATCHING CURRENT (mA)
50
40
30
20
10
Q2
5
20
35
50
65
80
95 110 125
Q3
I
H
, HOLDING CURRENT (mA)
35
30
25
20
15
10
5
MTI1 Positive
MTI1 Negative
0
−40 −25 −10
0
−40 −25 −10
5
20
35
50
65
80
95 110 125
T
J
, JUNCTION TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 4. Typical Latching Current
Figure 5. Typical Holding Current
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NYE08−10B6ST1G
0.15
3.8
0.079
2.0
0.091
2.3
0.079
2.0
0.059
1.5
0.059
1.5
0.059
1.5
inches
mm
0.091
2.3
0.244
6.2
0.984
25.0
BOARD MOUNTED VERTICALLY IN CINCH 8840 EDGE CONNECTOR.
BOARD THICKNESS = 65 MIL., FOIL THICKNESS = 2.5 MIL.
MATERIAL: G10 FIBERGLASS BASE EPOXY
0.096
2.44
0.059
1.5
0.096
2.44
0.059
1.5
0.096
2.44
0.472
12.0
Figure 1. PCB for Thermal Impedance and Power Testing of SOT-223
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