Chip Silicon Rectifier
SFM11-MH THRU SFM16-MH
Super fast recovery type
Formosa MS
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
0.071(1.8)
0.055(1.4)
0.035(0.9)
0.028(0.7)
Mechanical data
Case : Molded plastic, JEDEC SOD-123H
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by c athode band
Mounting P
osition : Any
Weight : 0.0393 gram
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
(AT T
A
=25
o
C unless otherwise noted)
PARAMETER
Forward rectified current
Forward surge current
CONDITIONS
Ambient temperature = 50
o
C
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
V
R
= V
RRM
T
A
=
25
o
C
o
Symbol
I
O
I
FSM
MIN.
TYP.
MAX.
1.0
25
5.0
100
UNIT
A
A
uA
uA
o
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
I
R
Rq
JA
C
J
T
STG
-55
42
10
V
R
= V
RRM
T
A
= 100 C
Junction to ambient
f=1MHz and applied 4vDC reverse voltage
C / w
pF
+150
o
C
SYMBOLS
MARKING
CODE
S1
S2
S3
S4
S5
S6
V
RRM
*1
V
RMS
*2
V
R
*3
V
F
*4
T
RR
*5
Operating
temperature
(
o
C)
(V)
SFM11-MH
SFM12-MH
SFM13-MH
SFM14-MH
SFM15-MH
SFM16-MH
50
100
150
200
300
400
(V)
35
70
105
140
210
280
(V)
50
100
150
200
300
400
(V)
(nS)
*1 Repetitive peak reverse voltage
0.95
35
-55 to +150
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
1.25
*5 Reverse recovery time
RATING AND CHARACTERISTIC CURVES (SFM11-MH THRU SFM16-MH)
FIG.1-TYPICAL FORWARD
CHARACTERISTICS
AVERAGE FORWARD CURRENT,(A)
FIG.2-TYPICAL FORWARD CURRENT
DERATING CURVE
1.2
1.0
0.8
0.6
0.4
0.2
0
0
Single Phase
Half Wave 60Hz
Resistive Or Inductive Load
10
-M
H
INSTANTANEOUS FORWARD CURRENT,(A)
SF
M1
1-M
H~
1.0
.1
Tj=25 C
Pulse Width 300us
1% Duty Cycle
SF
M
15
-M
H~
SF
M
16
-M
H
SF
M1
4
25
50
75
100
125
150
175
AMBIENT TEMPERATURE ( C)
.01
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
PEAK FORWARD SURGE CURRENT,(A)
25
.001
.4
.6
.8
1.0
1.2
1.4
1.6
1.8
20
FORWARD VOLT
AGE,(V)
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTICS
50
W
NONINDUCTIVE
10
W
NONINDUCTIVE
15
Tj=25 C
8.3ms Single Half
Sine Wave
JEDEC method
10
5
(+)
25Vdc
(approx.)
( )
1
W
NON-
INDUCTIVE
OSCILLISCOPE
(NOTE 1)
D.U.T.
( )
PULSE
GENERATOR
(NOTE 2)
(+)
0
1
5
10
50
100
NUMBER OF CYCLES AT 60Hz
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
FIG.5-TYPICAL JUNCTION CAPACITANCE
70
trr
+0.5A
|
|
|
|
|
|
|
|
JUNCTION CAPACITANCE,(pF)
60
50
40
30
20
10
0
-0.25A
-1.0A
1cm
SET TIME BASE FOR
50 / 10ns / cm
0
.01
.05
.1
.5
1
5
10
50
100
REVERSE VOLTAGE,(V)
MEMS传感器
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