NYT6-5D6DTG,
NYT6-5D6DT4G
Sensitive Gate Triacs
Silicon Bidirectional Thyristors
Designed for high volume, low cost, industrial and consumer
applications such as motor control; process control; temperature, light
and speed control.
Features
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Passivated Die for Reliability and Uniformity
Four−Quadrant Triggering
Blocking Voltage to 600 V
On−State Current Rating of 6.0 A RMS at 93°C
Low Level Triggering and Holding Characteristics
Epoxy Meets UL 94 V−0 @ 0.125 in
These are Pb−Free Devices
TRIACS
6.0 AMPERES RMS
600 VOLTS
MT2
G
MT1
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Peak Repetitive Off−State Voltage (Note 1)
(T
J
=
−40
to 110°C, Sine Wave,
50 to 60 Hz, Gate Open)
On−State RMS Current
(Full Cycle Sine Wave, 60 Hz, T
C
= 85°C)
Peak Non-Repetitive Surge Current
(One Full Cycle, 60 Hz, T
Jinitial
= 25°C)
Circuit Fusing Consideration (t = 8.3 msec)
Peak Gate Power
(Pulse Width
≤
10
msec,
T
C
= 93°C)
Average Gate Power
(t = 8.3 msec, T
C
= 93°C)
Peak Gate Current
(Pulse Width
≤
20
msec,
T
C
= 93°C)
Peak Gate Voltage
(Pulse Width
≤
20
msec,
T
C
= 93°C)
Operating Junction Temperature Range
Storage Temperature Range
Symbol
V
DRM,
V
RRM
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
I
GM
V
GM
T
J
T
stg
Value
600
Unit
V
1 2
6.0
60
6.6
2.0
1.0
4.0
5.0
−40
to 110
−40
to 150
A
A
A
2
sec
W
W
A
V
°C
°C
1
2
3
4
1
2
3
Y
=
WW
=
NYT6−5D6 =
G
=
4
IPAK
CASE 369D
STYLE 6
3
4
DPAK
CASE 369C
STYLE 6
MARKING
DIAGRAMS
YWW
NYT
6−5D6G
YWW
NYT
6−5D6G
Year
Work Week
Device Code
Pb−Free Package
PIN ASSIGNMENT
Main Terminal 1
Main Terminal 2
Gate
Main Terminal 2
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the device are exceeded.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
©
Semiconductor Components Industries, LLC, 2012
October, 2012
−
Rev. 2
1
Publication Order Number:
NYT6−5D6D/D
NYT6−5D6DTG, NYT6−5D6DT4G
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
−
Junction−to−Case
−
Junction−to−Ambient
−
Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering Purposes (Note 3)
Symbol
R
qJC
R
qJA
R
qJA
T
L
Max
3.5
88
80
260
Unit
°C/W
°C
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated V
DRM
or V
RRM
; Gate Open)
ON CHARACTERISTICS
Forward On−State Voltage (I
TM
=
±
8.5 A)
Gate Trigger Current (Continuous dc) (V
D
= 12 V, R
L
= 30
W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(−), G(+)
Gate Trigger Voltage (V
D
= 12 V, R
L
= 30
W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(−), G(+)
Gate Non−Trigger Voltage (Continuous dc)
−
(V
D
= 12 V, R
L
= 30
W,
T
J
= 110°C)
All Four Quadrants
Holding Current (V
D
= 12 V, Initiating Current =
±
100 mA)
Latching Current (V
D
= 12 V, I
G
= 60 mA)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(−), G(+)
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current
(V
D
= 200 V, I
TM
= 1.8 A, Commutating dv/dt = 1.0 V/msec, T
J
= 110°C, f = 250 Hz,
CL = 5.0
mfd,
LL = 80 mH, RS = 56
W,
CS = 0.03
mfd)
With snubber
Critical Rate of Rise of Off−State Voltage
(V
D
= 0.67 X Rated V
DRM
, Exponential Waveform, Gate Open, T
J
= 110°C)
Critical Rate of Rise of On−State Current
(T
J
= 110°C, f = 120 Hz, I
G
= 2 x I
GT
, tr
≤
100 ns)
di/dt(c)
−
1.5
−
A/ms
V
TM
I
GT
−
−
−
−
−
−
−
−
−
0.2
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.4
−
1.6
5.0
5.0
5.0
10
1.3
1.3
1.3
1.3
−
20
30
30
30
30
V
mA
T
J
= 25°C
T
J
= 110°C
I
DRM,
I
RRM
−
−
−
−
0.001
0.5
mA
Symbol
Min
Typ
Max
Unit
V
GT
V
V
GD
I
H
I
L
V
mA
mA
−
−
−
dv/dt
dI/dt
60
−
−
−
−
50
V/ms
A/ms
2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
3. 1/8″ from case for 10 seconds.
4. Pulse Test: Pulse Width
≤
2.0 msec, Duty Cycle
≤
2%.
ORDERING INFORMATION
Device
NYT6−5D6DTG
NYT6−5D6DT4G
Package Type
IPAK
(Pb−Free)
DPAK
(Pb−Free)
Package
369D
369C
Shipping
†
75 Units / Rail
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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NYT6−5D6DTG, NYT6−5D6DT4G
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Quadrant 1
MainTerminal 2 +
Symbol
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
Parameter
Peak Repetitive Forward Off−State Voltage
Peak Forward Blocking Current
Peak Repetitive Reverse Off−State Voltage
Peak Reverse Blocking Current
Maximum On−State Voltage
Holding Current
Quadrant 3
MainTerminal 2
−
I
H
V
TM
I
RRM
at V
RRM
on state
I
H
V
TM
off state
+ Voltage
I
DRM
at V
DRM
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
(+) MT2
Quadrant II
(−) I
GT
GATE
MT1
REF
(+) I
GT
GATE
MT1
REF
Quadrant I
I
GT
−
(−) MT2
(−) MT2
+ I
GT
Quadrant III
(−) I
GT
GATE
MT1
REF
(+) I
GT
GATE
MT1
REF
−
MT2 NEGATIVE
(Negative Half Cycle)
Quadrant IV
All polarities are referenced to MT1.
With in−phase signals (using standard AC lines) quadrants I and III are used.
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NYT6−5D6DTG, NYT6−5D6DT4G
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (
°
C)
P(AV) , AVERAGE POWER DISSIPATION (WATTS)
110
6.0
180°
5.0
α
4.0
a
= CONDUCTION ANGLE
3.0
2.0
a
= 30°
1.0
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
I
T(RMS)
, RMS ON−STATE CURRENT (A)
60°
α
90°
120°
dc
105
a
= 30°
60°
90°
100
α
95
α
120°
180°
90
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
I
T(RMS)
, RMS ON−STATE CURRENT (A)
a
= CONDUCTION ANGLE
dc
4.0
Figure 1. RMS Current Derating
r(t) , TRANSIENT RESISTANCE (NORMALIZED)
100
1.0
Figure 2. On−State Power Dissipation
10
0.1
Z
qJC(t)
= R
qJC(t)
Sr(t)
I
T
, INSTANTANEOUS ON−STATE CURRENT (A)
T
J
= 125°C
1
0.01
0.1
1.0
10
100
1000
10 k
t, TIME (ms)
T
J
= 25°C
Figure 4. Transient Thermal Response
0.1
0.01
T
J
=
−40°C
0.001
0
0.5
1
1.5
2
2.5
3
3.5
V
T
, INSTANTANEOUS ON-STATE VOLTAGE (V)
4
Figure 3. Maximum On−State Voltage
Characteristics
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NYT6−5D6DTG, NYT6−5D6DT4G
21
I
GT
, GATE TRIGGER CURRENT (mA)
18
15
12
9
6
3
Q2 & Q3
Q1
Q4
V
GT
, GATE TRIGGER VOLTAGE (V)
0.9
Q4
0.8
0.7
0.6
0.5
0.4
0.3
−40 −20 −10
Q2
Q1 & Q3
0
−40 −20 −10
5
20
35
50
65
80
95 110 125
5
20
35
50
65
80
95 110 125
T
J
, JUNCTION TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 5. Typical Gate Trigger Current
18
I
L
, LATCHING CURRENT (mA)
I
H
, HOLDING CURRENT (mA)
16
14
12
10
8
6
4
2
0
−40 −20 −10
5
20
35
50
65
80
95 110 125
Q1
Q3 & Q4
Q2
10
8
6
4
2
Figure 6. Typical Gate Trigger Voltage
MTI1 Negative
MTI1 Positive
0
−40 −20 −10
5
20
35
50
65
80
95 110 125
T
J
, JUNCTION TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 7. Typical Latching Current
Figure 8. Typical Holding Current
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