Thermal Resistance, Junction−to−Tab Measured on MT2 Tab Adjacent to Epoxy
Maximum Device Temperature for
Soldering Purposes for 10 Secs Maximum
Symbol
R
qJA
R
qJT
T
L
Max
156
25
260
Unit
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(V
AK
= Rated V
DRM
/V
RRM
; R
GK
= 1000
W)
ON CHARACTERISTICS
Peak Forward On−State Voltage (Note 2)
(I
TM
= 2.2 A Peak)
Gate Trigger Current (dc) (Note 3)
(V
AK
= 7 Vdc, R
L
= 100
W)
Gate Trigger Voltage (dc) (Note 3)
(V
AK
= 7 Vdc, R
L
= 100
W)
Gate Non−Trigger Voltage
(V
AK
= V
DRM
, R
L
= 100
W)
Holding Current
(V
AK
= 12 V, R
GK
= 1000
W)
Initiating Current = 200 mA
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off−State Voltage
(T
C
= 110°C)
2. Pulse Width = 1.0 ms, Duty Cycle
v
1%.
3. R
GK
Current not included in measurement.
dv/dt
−
25
−
V/ms
T
C
= 25°C
T
C
= −40°C
T
C
= 25°C
T
C
= −40°C
T
C
= 110°C
I
H
T
C
= 25°C
T
C
= −40°C
−
−
2.0
−
5.0
10
mA
V
TM
I
GT
V
GT
V
GD
−
−
−
−
−
0.1
1.2
30
−
−
−
−
1.7
200
500
0.8
1.2
−
V
mA
V
V
I
DRM
, I
RRM
T
C
= 25°C
T
C
= 110°C
−
−
−
−
10
200
mA
mA
Symbol
Min
Typ
Max
Unit
Voltage Current Characteristic of SCR
+ Current
Anode +
V
TM
on state
I
RRM
at V
RRM
I
H
Symbol
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
Parameter
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak on State Voltage
Holding Current
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode −
+ Voltage
I
DRM
at V
DRM
Forward Blocking Region
(off state)
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CURRENT DERATING
TA , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE (
°
C)
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (
°
C)
140
140
120
100
80
60
40
20
0
0
dc
a
= 180°
a
= CONDUCTION ANGLE
0.2
0.4
0.6
0.8
1.0
I
T(AV)
, AVERAGE ON‐STATE CURRENT (AMP)
100
a
= 180°
a
= CONDUCTION
ANGLE
dc
60
20
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
I
T(AV)
, AVERAGE ON‐STATE CURRENT (AMPS)
Figure 1. Maximum Case Temperature
Figure 2. Maximum Ambient Temperature
5.0
3.0
2.0
T
J
= 110°C
25°C
1.0
I T , INSTANTANEOUS ON‐STATE CURRENT (AMP)
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0
0.5
1.0
1.5
2.0
2.5
V
T
, INSTANTANEOUS ON‐STATE VOLTAGE (VOLTS)
Figure 3. Typical Forward Voltage
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r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
t, TIME (ms)
100
200
500
1000
2000
5000
1000
Figure 4. Thermal Response
TYPICAL CHARACTERISTICS
0.8
VGT, GATE TRIGGER VOLTAGE (VOLTS)
I GT GATE TRIGGER CURRENT (
μ
A)
100 110
V
AK
= 7.0 V
R
L
= 100
100
50
30
20
10
5.0
3.0
2.0
1.0
-40
0.7
0.6
0.5
0.4
0.3
-75
-50
-25
0
25
50
75
-20
0
20
40
60
80
100 110
T
J
, JUNCTION TEMPERATURE (°C)
T
J
JUNCTION TEMPERATURE (°C)
Figure 5. Typical Gate Trigger Voltage
P(AV) MAXIMUM AVERAGE POWER DISSIPATION (WATTS)
Figure 6. Typical Gate Trigger Current
10
I H , HOLDING CURRENT (mA)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
dc
30°
60°
90°
120
°
180°
V
AK
= 12 V
R
L
= 100
W
5.0
2.0
0.2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.0
-40
-20
0
20
40
60
80
100 110
T
J
, JUNCTION TEMPERATURE (°C)
I
T(AV)
, AVERAGE ON‐STATE CURRENT (AMPS)
Figure 7. Typical Holding Current
Figure 8. Power Dissipation
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PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE N
D
b1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
MILLIMETERS
NOM
MAX
1.63
1.75
0.06
0.10
0.75
0.89
3.06
3.20
0.29
0.35
6.50
6.70
3.50
3.70
2.30
2.40
0.94
1.05
−−−
−−−
1.75
2.00
7.00
7.30
10°
−
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
−−−
0.069
0.276
−
4
H
E
1
2
3
E
b
e1
e
q
L
C
A
0.08 (0003)
A1
DIM
A
A1
b
b1
c
D
E
e
e1
L
L1
H
E
q
MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
0.20
1.50
6.70
0°
MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.008
0.060
0.264
0°
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
−−−
0.078
0.287
10°
L1
SOLDERING FOOTPRINT
3.8
0.15
2.0
0.079
STYLE 11:
PIN 1. MT 1
2. MT 2
3. GATE
4. MT 2
2.3
0.091
2.3
0.091
6.3
0.248
2.0
0.079
1.5
0.059
mm
inches
SCALE 6:1
ON Semiconductor and the
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