NTND31215CZ
Small Signal MOSFET
20 V, Complementary 0.65 mm x 0.90 mm
x 0.4 mm XLLGA6 Package
Features
•
Advanced Trench Complementary MOSFET
•
Offers a Low R
DS(ON)
Solution in the Ultra Small
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0.65 mm
×
0.90 mm Package
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
V
(BR)DSS
R
DS(ON)
MAX
1.5
W
@ 4.5 V
2.0
W
@ 2.5 V
3.0
W
@ 1.8 V
4.5
W
@ 1.5 V
5.0
W
@ −4.5 V
I
D
Max
N−Channel
20 V
220 mA
•
•
•
•
Small Signal Load Switch with Level Shift
Analog Switch
High Speed Interfacing
Optimized for Power Management in Ultra Portable Products
P−Channel
−20 V
6.0
W
@ −2.5 V
7.0
W
@ −1.8 V
10.0
W
@ −1.5 V
DEVICE SYMBOL
D1
−127 mA
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise specified)
Parameter
Drain-to-Source Voltage
NMOS
PMOS
Gate-to-Source Voltage
NMOS
PMOS
N−Channel
Continuous Drain
Current (Note 1)
Steady
State
t
≤
5s
P−Channel
Continuous Drain
Current (Note 1)
Steady
State
t
≤
5s
Power Dissipation
(Note 1)
Steady
State
t
≤
5s
Pulsed Drain Current
NMOS
PMOS
Source Current (Body Diode)
I
S
t
p
= 10
ms
I
DM
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C
P
D
I
D
I
D
V
GSS
Symbol
V
DSS
Value
20
−20
±8
±8
220
158
253
−127
−91
−146
125
166
846
−488
200
−200
Operating Junction and Storage Temperature
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
J
,
T
STG
T
L
−55 to
150
260
°C
5
°C
4
S2
D2
3
G2
mA
6
D1
mA
mW
XLLGA6
Case 713AC
F
M
FM
1
= Specific Device Code
= Date Code
mA
mA
S1
NMOS
D2
PMOS
G1
V
G2
Unit
V
S2
MARKING DIAGRAM
PINOUT DIAGRAM
S1
1
G1
2
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface-mounted on FR4 board using the minimum recommended pad size,
1 oz Cu.
(Bottom View)
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of
this data sheet.
©
Semiconductor Components Industries, LLC, 2015
1
November, 2015 − Rev. 0
Publication Order Number:
NTND31215CZ/D
NTND31215CZ
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (Note 2)
Steady State
t
≤
5s
Symbol
R
qJA
Max
998
751
Unit
°C/W
2. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq), 1 oz copper
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
N
P
Zero Gate Voltage Drain Current
I
DSS
N
V
GS
= 0 V, I
D
= 250
mA
V
GS
= 0 V, I
D
= −250
mA
V
GS
= 0 V,
V
DS
= 5 V
V
GS
= 0 V,
V
DS
= 16 V
P
V
GS
= 0 V,
V
DS
= −5 V
V
GS
= 0 V,
V
DS
= −16 V
Gate-to-Source Leakage Current
I
GSS
N
P
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
N
P
Drain-to-Source On Resistance
R
DS(ON)
N
V
GS
= V
DS
, I
D
= 250
mA
V
GS
= V
DS
, I
D
= −250
mA
V
GS
= 4.5 V, I
D
= 100 mA
V
GS
= 2.5 V, I
D
= 50 mA
V
GS
= 1.8 V, I
D
= 20 mA
V
GS
= 1.5 V, I
D
= 10 mA
P
V
GS
= −4.5 V, I
D
= −100 mA
V
GS
= −2.5 V, I
D
= −50 mA
V
GS
= −1.8 V, I
D
= −20 mA
V
GS
= −1.5 V, I
D
= −10 mA
Forward Transconductance
g
FS
N
P
Forward Diode Voltage
V
SD
N
P
V
DS
= 5 V, I
D
= 125 mA
V
DS
= −5 V, I
D
= −125 mA
V
GS
= 0 V, I
S
= 10 mA
V
GS
= 0 V, I
S
= −10 mA
0.4
−0.4
0.8
1.1
1.4
1.8
2.1
2.7
3.6
4.2
0.48
0.35
0.6
−0.6
1.0
−1.0
V
1.0
−1.0
1.5
2.0
3.0
4.5
5.0
6.0
7.0
10.0
S
W
V
T
J
= 25°C
T
J
= 85°C
T
J
= 25°C
T
J
= 25°C
T
J
= 85°C
T
J
= 25°C
20
−20
50
200
100
−50
−200
−100
±100
±100
nA
nA
V
Symbol
FET
Test Condition
Min
Typ
Max
Unit
V
GS
= 0 V, V
DS
=
±5
V
V
GS
= 0 V, V
DS
=
±5
V
3. Switching characteristics are independent of operating junction temperatures.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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NTND31215CZ
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Capacitance
Input Capacitance
Output Capacitance
Reverse Capacitance
C
ISS
C
OSS
C
RSS
C
ISS
C
OSS
C
RSS
P
V
GS
= 0 V, f = 1 MHz,
V
DS
= −15 V
N
V
GS
= 0 V, f = 1 MHz,
V
DS
= 15 V
12.3
3.4
2.5
12.8
2.8
2.0
pF
Symbol
FET
Test Condition
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS, V
GS
= 4.5 V
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
t
d(ON)
t
r
t
d(OFF)
t
f
t
d(ON)
t
r
t
d(OFF)
t
f
P
V
GS
= −4.5 V, V
DS
= −15 V,
I
D
= −200 mA, R
G
= 2
W
N
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 200 mA, R
G
= 2
W
16.5
25.5
142
80
37
71
280
171
ns
3. Switching characteristics are independent of operating junction temperatures.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Device
NTND31215CZTAG
Package
XLLGA6
(Pb−Free)
Shipping
†
8000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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3
NTND31215CZ
TYPICAL CHARACTERISTICS − P−CHANNEL
0.25
−I
D
, DRAIN CURRENT (A)
0.25
−1.8 V
−I
D
, DRAIN CURRENT (A)
0.20
−1.6 V
0.15
−1.4 V
0.20
V
DS
= −5 V
V
GS
= −2 V to −5 V
0.15
0.10
0.10
T
J
= 25°C
0.05
T
J
= −55°C
0
T
J
= 125°C
1.0
1.5
2.0
0.05
0
0
1
2
3
4
−1.2 V
5
0
0.5
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
−V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
−V
GS
, GATE−TO−SOURCE VOLTAGE (V)
T
J
= 25°C
I
D
= −0.12 A
5.0
Figure 2. Transfer Characteristics
T
J
= 25°C
4.5
4.0
3.5
3.0
V
GS
= −2.5 V
2.5
V
GS
= −4.5 V
2.0
1.5
0.01 0.02 0.03 0.04 0.05
0.06 0.07 0.08 0.09 0.10
−I
D
, DRAIN CURRENT (A)
V
GS
= −1.8 V
V
GS
= −1.5 V
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
1.6
R
DS(on)
, NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
−50
V
GS
= −4.5 V
I
D
= −0.1 A
−I
DSS
, LEAKAGE (nA)
1000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
T
J
= 150°C
100
T
J
= 125°C
T
J
= 85°C
10
1
0.1
0.01
−25
0
25
50
75
100
125
150
0
5
T
J
= 25°C
10
15
20
T
J
, JUNCTION TEMPERATURE (°C)
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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NTND31215CZ
TYPICAL CHARACTERISTICS − P−CHANNEL
25
V
GS
= 0 V
T
J
= 25°C
f = 1 MHz
t, TIME (ns)
C
ISS
15
1000
V
GS
= −4.5 V
V
DS
= −15 V
I
D
= −0.2 A
C, CAPACITANCE (pF)
20
t
d(off)
t
f
100
t
r
t
d(on)
10
C
OSS
5
C
RSS
0
0
5
10
15
20
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
10
1
10
R
G
, GATE RESISTANCE (W)
100
Figure 7. Capacitance Variation
0.010
V
GS
= 0 V
−I
S
, SOURCE CURRENT (A)
0.009
0.008
0.007
T
J
= 125°C
0.006
0.005
0.004
0.003
0.002
0.3
0.4
0.5
T
J
= −55°C
0.6
0.7
0.8
0.9
1.0
0.001
T
J
= 25°C
−I
D
, DRAIN CURRENT (A)
1
Figure 8. Resistive Switching Time Variation
vs. Gate Resistance
V
GS
≤
−4.5 V
Single Pulse
T
C
= 25°C
10
ms
100
ms
1 ms
10 ms
0.1
0.01
R
DS(on)
Limit
Thermal Limit
Package Limit
0.1
1
10
dc
100
−V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
Figure 10. Maximum Rated Forward Biased
Safe Operating Area
R
qWJA(t)
, EFFECTIVE TRANSIENT
THERMAL RESISTANCE (°C/W)
1000
Duty Cycle = 0.5
0.2
0.1
100
0.05
0.02
10
0.01
Single Pulse
1
0.000001
0.00001
0.0001
0.001
0.01
t, PULSE TIME (s)
0.1
1
10
100
1000
Figure 11. Thermal Response
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